Renesas 71V3558SA100BQG8

Overview

71V3558SA100BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It serves as a high-bandwidth, low-latency memory buffer in network packet processors and telecom line cards requiring burst pipelined reads/writes.

For engineers reviewing the 71V3558SA100BQG8 datasheet, 71V3558SA100BQG8 pinout, 71V3558SA100BQG8 application, or 71V3558SA100BQG8 equivalent, key selection criteria include ZBT™ dead-cycle elimination, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), JTAG IEEE 1149.1 support, and industrial temperature operation (–40°C to +85°C).

Technical Context

The 71V3558SA100BQG8 implements a fully synchronous, pipelined architecture where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word burst sequences. The device includes three chip enables (CE1, CE2, CE2) for depth expansion, asynchronous OE for output tri-state control, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant (BQG suffix). Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level inputs without direct VDD connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1356BV33-100AXC and AS7C33128PFSI-100BIN, the 71V3558SA100BQG8 uniquely delivers ZBT™-enabled zero-turnaround operation, IEEE 1149.1 JTAG, and programmable interleaved/linear burst - making it optimal for latency-critical, testable, and controller-offloaded memory subsystems.

Availability

71V3558SA100BQG8 is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, and industrial control systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 71V3558SA100BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V3558SA100BQG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed packet processing, telecom switching, and real-time embedded systems demanding deterministic low-latency memory access.

FAQ

What is the memory organization and total capacity of the 71V3558SA100BQG8?

The 71V3558SA100BQG8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. It supports the 256K × 18-bit configuration via pin-compatible variant 71V3556SA100BQG8, allowing design reuse across different data bus widths while maintaining identical timing and control interfaces.

Does the 71V3558SA100BQG8 support JTAG boundary scan, and which pins are used?

Yes, the 71V3558SA100BQG8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (on BGA packages) implement the test interface. TRST is optional and internally pulled up; if unused, it may be left floating. All JTAG pins have internal pull-up resistors per the datasheet.

How does the ZBT™ feature improve system performance in the 71V3558SA100BQG8?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3558SA100BQG8 eliminates mandatory idle cycles between consecutive read and write operations. This allows immediate back-to-back access - e.g., a write followed instantly by a read - increasing effective bus utilization by up to 30% in mixed-access scenarios typical of network packet buffers and descriptor queues.

What is the function of the ADV/LD and LBO pins on the 71V3558SA100BQG8?

ADV/LD controls the burst counter: LOW loads a new external address, HIGH advances the internal counter. LBO selects burst order - LOW enables linear sequence, HIGH enables interleaved. Both are synchronous inputs sampled on the rising CLK edge, and LBO must remain static during burst operation to prevent undefined addressing.

Can the 71V3558SA100BQG8 operate in low-power mode, and how is it activated?

Yes, the 71V3558SA100BQG8 supports sleep mode via the ZZ pin. When ZZ is driven HIGH synchronously, the internal clock is gated and core power consumption drops significantly while guaranteeing data retention. This mode is ideal for power-gated states in industrial PLCs or standby intervals in telecom equipment.