Renesas 71V3558SA100BQGI
- Part No.:
- 71V3558SA100BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3558SA100BQGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3558SA100BQGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 18-bit organization (4.5 Mbit), 100 MHz clock speed, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP packaging. It serves as a high-bandwidth, low-latency memory buffer in network packet processors and telecom line cards requiring burst-mode pipelined data transfers.
For engineers reviewing the 71V3558SA100BQGI datasheet, 71V3558SA100BQGI pinout, 71V3558SA100BQGI application, or 71V3558SA100BQGI equivalent, key selection criteria include ZBT™ dead-cycle elimination, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), JTAG IEEE 1149.1 support, and industrial temperature operation (–40°C to +85°C).
Technical Context
The 71V3558SA100BQGI implements a fully synchronous, pipelined SRAM architecture where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without dead cycles.
It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word burst sequences. The device includes three chip enables (CE1, CE2, CE2) for depth expansion, asynchronous OE for output tri-state control, and optional boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.5 Mbit); supports x18 configuration in 100-pin TQFP package. |
| Clock Frequency | 100 MHz maximum; enables 10 ns clock period timing for high-throughput burst transfers. |
| Clock-to-Data Access | 3.5 ns typical; defines minimum latency from CLK rise to valid Q output in read cycles. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for sustained operation in base station and industrial control environments. |
| Burst Mode | 4-word linear or interleaved burst; selected via static LBO pin; eliminates external address sequencing logic. |
| JTAG Support | IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables in-system test and debug without physical probe access. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level input without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs registering full 18-bit address on rising CLK; A0–A16 used for 256K×18 addressing. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables: CE1/CE2 active-low, CE2 active-high; enable depth expansion with no external logic. |
| R/W | Read/Write Control | Synchronous signal determining cycle type; sampled with ADV/LD to initiate load or burst operation two cycles later. |
| ADV/LD | Advance Burst / Load Address | Synchronous control: LOW loads new external address; HIGH advances internal burst counter for sequential access. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence; LOW = linear, HIGH = interleaved; must remain stable during burst. |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); all may be tied low for full-word writes. |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge; OE is sole asynchronous signal. |
| OE | Output Enable | Asynchronous, active-low control of I/O bus drivers; can be permanently tied low for continuous read capability. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan signals; TRST is optional asynchronous reset; all have internal pull-ups except TRST (pull-up). |
| VDD, VDDQ, VSS | Power & Ground | VDD (3.3 V core), VDDQ (3.3 V I/O), VSS (ground); multiple dedicated pins per domain ensure low-impedance supply routing. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations, enabling 100% bus utilization in pipelined systems. |
| Internally Synchronized OE | Removes need for external OE timing control; outputs remain valid across clock boundaries when OE is asserted. |
| 4-Word Burst Counter | Reduces address bus traffic by 75% during sequential accesses; supports both linear and interleaved patterns via LBO pin. |
| Individual Byte Write (BW1–BW4) | Enables precise 9-bit sub-word writes without masking logic; simplifies partial-word update in protocol processing engines. |
| Three Chip Enables (CE1/CE2/CE2) | Allows seamless depth expansion up to 3× without glue logic; supports hierarchical memory mapping in multi-bank architectures. |
| Optional JTAG Boundary Scan | Provides IEEE 1149.1-compliant test access for interconnect verification and in-system debugging in dense PCB layouts. |
Applications
| Telecom Line Cards | Network Packet Processors |
|---|---|
|
Use Scenario: High-speed buffering of ATM or Ethernet frame headers and payloads in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-level packet buffer with deterministic 3.5 ns read access and zero-turnaround write-read switching. Use Value: Enables real-time header inspection and forwarding decisions without pipeline stalls, sustaining 10 Gbps+ line rates. |
Use Scenario: Storing flow state tables and temporary packet metadata in multi-core network processors handling IPv4/IPv6 forwarding. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing concurrent read/write access to parallel execution units via burst-aligned data streams. Use Value: Delivers 100 MHz sustained bandwidth with 4-word bursts, reducing external bus arbitration overhead by >60% versus async SRAM. |
| Industrial PLC Controllers | Radar Signal Processing Modules |
|
Use Scenario: Real-time I/O mapping and cyclic process data exchange in modular programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing cyclic task buffers and configuration registers with guaranteed data retention in sleep mode (ZZ pin). Use Value: Supports –40°C to +85°C operation and JTAG testability for field-deployed systems requiring long-term reliability and diagnostics. |
Use Scenario: Intermediate storage of digitized IF samples and FFT coefficients in airborne radar front-end modules with strict SWaP-C constraints. IC Role / Device Role / Timing Role: Low-power, high-speed memory interfacing directly with ADC/DAC controllers and FPGA-based DSP pipelines. Use Value: Achieves 3.5 ns access with 3.3 V I/O compatibility, minimizing level-shifting complexity while meeting MIL-STD-810G thermal cycling requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-100BZI | 100 MHz, 256K×18, 3.3 V, no ZBT™, no JTAG, 100-pin TQFP; 4.5 ns access, no burst counter. | Lacks zero-turnaround and burst sequencing; requires external address generation for sequential reads. | Select when ZBT™ and JTAG are unnecessary and cost sensitivity outweighs performance optimization. |
| AS7C3256B-10JIN | 100 MHz, 128K×32, 3.3 V, no ZBT™, no JTAG, 100-pin TQFP; 4.0 ns access, asynchronous OE only. | Different organization (x32 vs x18); lacks ADV/LD, LBO, BWx, and burst capability; no sleep mode (ZZ). | Choose for legacy x32 bus interfaces where burst and turnaround optimization are not required. |
Compared with CY7C1355BV18-100BZI and AS7C3256B-10JIN, the 71V3558SA100BQGI delivers unique ZBT™ dead-cycle elimination and integrated burst control-critical for maximizing throughput in pipelined telecom and packet-processing systems-while maintaining pin-compatible TQFP packaging and industrial temperature support.
Availability
71V3558SA100BQGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and defense electronics requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature performance.
Supply support for 71V3558SA100BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3558SA100BQGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switching and real-time control systems demanding deterministic timing and burst efficiency.
FAQ
What is the memory organization and density of the 71V3558SA100BQGI?
The 71V3558SA100BQGI is configured as 256K × 18-bit, delivering 4.5 Mbit (4,718,592-bit) total capacity. This x18 organization is implemented in the 100-pin TQFP package and is distinct from the 128K × 36 variant also offered in the same family. The 71V3558SA100BQGI uses address lines A0–A17, with A0–A16 actively decoded for 256K addressing.
Does the 71V3558SA100BQGI support JTAG boundary scan, and which pins are used?
Yes, the 71V3558SA100BQGI supports IEEE 1149.1-compliant boundary scan. The JTAG interface uses pins TMS (pin 97), TDI (pin 98), TCK (pin 99), TDO (pin 100), and optional TRST (pin 64 on latest die revision). All JTAG pins have internal pull-ups except TRST, which has an internal pull-up and may be left floating if unused.
How does the ZBT™ feature eliminate dead cycles in the 71V3558SA100BQGI?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3558SA100BQGI allows immediate transition from a write cycle to a read cycle-or vice versa-without inserting idle bus cycles. This is achieved through internal synchronization of OE and address/control registers, ensuring the bus remains active and productive during mode switches, directly improving effective bandwidth in pipelined architectures.
What is the function of the ADV/LD and LBO pins on the 71V3558SA100BQGI?
ADV/LD is a synchronous input that determines whether the internal burst counter loads a new external address (ADV/LD = LOW) or increments (ADV/LD = HIGH). LBO is a static input selecting burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both pins must be stable before and during burst operation to ensure correct address sequencing in the 71V3558SA100BQGI.
What power supply requirements and thermal specifications apply to the 71V3558SA100BQGI?
The 71V3558SA100BQGI requires two 3.3 V supplies: VDD (core, 3.135–3.465 V) and VDDQ (I/O, 3.135–3.465 V), each with ±5% tolerance. It operates over the industrial temperature range of –40°C to +85°C and supports sleep mode (via ZZ pin) for reduced power consumption while retaining data. Absolute maximum ratings include VTERM ≤ VDD + 0.5 V on I/O pins.
71V3558SA100BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3558SA100BQGI FAQ
1.How can I place an order for 71V3558SA100BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558SA100BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558SA100BQGI reliable?
The price and inventory of 71V3558SA100BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558SA100BQGI is usually 5 days.
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Once your 71V3558SA100BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558SA100BQGI?
For technical support, including 71V3558SA100BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558SA100BQGI requirements.
6.How does Aetrix verify that 71V3558SA100BQGI is sourced from the original manufacturer or authorized distributors?
All 71V3558SA100BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558SA100BQGI meets industry standards.
7.What is the process for return or replacement of 71V3558SA100BQGI?
All 71V3558SA100BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558SA100BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558SA100BQGI part is unused and in its original packaging.
Return procedure for 71V3558SA100BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558SA100BQGI Tags

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M24C02-WMN6TP
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AT21CS01-STUM10-T
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