Renesas 71V3558SA133BQG

Overview

71V3558SA133BQG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 18-bit organization (4.5 Mbit), 133 MHz maximum clock frequency, 3.5 ns clock-to-data access time, and zero bus turnaround architecture. It supports pipelined burst reads/writes, individual byte write control, and JTAG boundary scan in a 165-ball fine-pitch BGA (BQG) package for high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V3558SA133BQG datasheet, 71V3558SA133BQG pinout, 71V3558SA133BQG application, or 71V3558SA133BQG equivalent, key selection criteria include ZBT™ bus efficiency, 4-word burst capability (linear/interleaved), 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), and JTAG IEEE 1149.1 compliance for system-level testability.

Technical Context

This SRAM implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal without wait states.

The device integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO pins, supports pipelined outputs via dual-register data paths, and includes three chip enables (CE1, CE2, CE2) for flexible depth expansion-enabling seamless integration into high-bandwidth memory subsystems requiring deterministic latency and low bus overhead.

Key Specifications

Pinout & Package

Packaged in a 165-ball fine-pitch ball grid array (BQG) per JEDEC MO-207AD, with 1.0 mm ball pitch and 15.0 mm × 15.0 mm body size. Pinout validated per IDT document 5281 tbl 25a (256K × 18 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-133BZI and AS7C3256B-133JCIN, the 71V3558SA133BQG delivers measurable bus efficiency gains via ZBT™ and simplifies system test through integrated JTAG-making it optimal for high-throughput, testable telecom infrastructure where deterministic latency and production test coverage are mandatory.

Availability

71V3558SA133BQG is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, and baseband processor cache applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V3558SA133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V3558SA series belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and telecom infrastructure where deterministic memory access and burst efficiency are critical.

FAQ

What is the memory organization and density of the 71V3558SA133BQG?

The 71V3558SA133BQG is configured as 256K × 18 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This x18 organization aligns with common 18-bit data buses in telecom and networking ASICs, and its 165-ball BQG package supports high-density PCB layouts without compromising signal integrity.

Does the 71V3558SA133BQG support burst read and write operations?

Yes, the 71V3558SA133BQG supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode is initiated by sampling ADV/LD high after initial address load, and each burst cycle advances the internal counter-reducing address bus transactions by 75% per burst.

What is the role of the ZZ (Sleep Mode) pin on the 71V3558SA133BQG?

The ZZ pin on the 71V3558SA133BQG is a synchronous sleep mode input. When driven high, it gates the internal clock and reduces power consumption to the lowest level while guaranteeing full data retention. This feature is essential for power-aware telecom systems that require rapid wake-up with zero data loss.

How does the ZBT™ architecture improve system performance in the 71V3558SA133BQG?

The ZBT™ architecture in the 71V3558SA133BQG eliminates dead cycles between read and write operations by allowing immediate bus direction reversal. Unlike conventional SRAMs that insert wait states, this enables true back-to-back memory transactions-increasing effective bandwidth by up to 30% in burst-intensive applications like packet forwarding.

Is JTAG boundary scan supported on the 71V3558SA133BQG, and which pins are used?

Yes, the 71V3558SA133BQG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned to dedicated balls in the BQG package (per document 5281 tbl 25a), enabling full interconnect testing without requiring additional test hardware or board-level probes.