Renesas 71V3558SA133BQG8
- Part No.:
- 71V3558SA133BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3558SA133BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3558SA133BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and JEDEC-standard 100-pin TQFP package. It serves as a high-bandwidth, low-latency memory buffer in network packet processors and telecom line cards requiring burst pipelined reads/writes without dead cycles.
For engineers reviewing the 71V3558SA133BQG8 datasheet, 71V3558SA133BQG8 pinout, 71V3558SA133BQG8 application, or 71V3558SA133BQG8 equivalent, key selection criteria include ZBT™ burst timing compliance, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan capability for system-level testability.
Technical Context
The 71V3558SA133BQG8 implements a fully synchronous, positive-edge-triggered pipeline with address/control/data registers clocked on CLK rising edge. Its ZBT™ architecture eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions using internal burst counter logic and ADV/LD-controlled address sequencing.
It supports interleaved or linear 4-word bursts via LBO pin control, individual byte write (BW1–BW4) for partial-word updates, and three chip enables (CE1, CE2, CE2) for depth expansion. Optional IEEE 1149.1 JTAG interface provides boundary-scan test access in SA variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-throughput data buffering in 36-bit wide bus systems. |
| Max Clock Frequency | 133 MHz; enables 7.5 ns cycle time for sustained burst transfers in high-speed switch fabric interfaces. |
| Clock-to-Data Access | 3.5 ns; guarantees deterministic output valid timing two clocks after address/control load, critical for pipelined ASIC/FPGA interfacing. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic families and eliminates level-shifting requirements. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in carrier-grade telecom equipment and base station hardware. |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus overhead and improves effective bandwidth in sequential access patterns. |
| JTAG Support | IEEE 1149.1 compliant (SA version); enables board-level structural test and in-system debug without dedicated test pads. |
Pinout & Package
71V3558SA133BQG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level inputs without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronous timing reference; all registers triggered on rising edge - defines pipeline stage boundaries. |
| ADV/LD | Address advance/load control | High = increment internal burst counter; low = load external address - enables seamless burst vs. random access switching. |
| R/W | Read/write direction | Synchronous signal sampled at rising CLK edge; determines data flow direction two cycles later. |
| BW1–BW4 | Byte write enables | Active-low per-9-bit-byte controls; allows partial-word writes without masking logic in controller. |
| CE1, CE2, CE2 | Chip enable inputs | Three independent enables (CE1/CE2 active-low, CE2 active-high); support flexible depth expansion and bank selection. |
| LBO | Burst order select | Static input; low = linear burst (A0, A1, A2, A3), high = interleaved (A0, A2, A1, A3) - matches CPU/cache addressing modes. |
| ZZ | Sleep mode input | Active-high; gates internal clock and reduces power to retention level while preserving data - essential for power-managed systems. |
| TMS/TDI/TCK/TDO/TRST | JTAG test interface | IEEE 1149.1 boundary-scan chain; enables automated PCB test and interconnect verification in SA variant. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations - increases effective bus utilization by up to 30% in burst-intensive traffic. |
| Pipelined Output Enable | Internally synchronized OE eliminates need for external timing control - simplifies FPGA interface design and removes OE skew constraints. |
| 4-Word Burst Counter | Hardware-based counter increments on each ADV/LD high cycle - offloads burst address generation from system controller and reduces bus arbitration overhead. |
| Individual Byte Write | Four independent BWx signals allow selective 9-bit byte updates - avoids full-word read-modify-write sequences in protocol header manipulation. |
| Three Chip Enables | CE1 (active-low), CE2 (active-low), CE2 (active-high) provide flexible depth expansion - supports 2× or 4× memory stacking without external decode logic. |
Applications
| Packet Buffering in Network Switches | Line Card Memory in Telecom Equipment |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed dual-port buffer with ZBT™ burst reads/writes synchronized to switch fabric clock domain. Use Value: 3.5 ns clock-to-data access and zero-turnaround operation sustain 133 MHz sustained throughput for wire-speed packet processing. | Use Scenario: Frame buffering and statistics accumulation in SONET/SDH line cards operating at OC-48/192 rates. IC Role / Device Role / Timing Role: Synchronous SRAM acting as temporary storage between framer ASIC and backplane interface. Use Value: Industrial temperature rating (–40°C to +85°C) and JTAG testability ensure reliability and field serviceability in carrier-class chassis. |
| Protocol Processing in Baseband Units | Real-Time Data Logging in Industrial Controllers |
Use Scenario: Holding LTE/5G MAC layer protocol state tables and scheduling queues in wireless baseband processing units. IC Role / Device Role / Timing Role: Low-latency memory for time-critical control plane lookups and dynamic buffer allocation. Use Value: 128K × 36-bit organization supports parallel 36-bit data paths matching DSP bus widths, reducing external multiplexing. | Use Scenario: Capturing sensor telemetry streams and event-triggered diagnostics in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Burst-capable SRAM serving as circular buffer for high-rate analog/digital acquisition subsystems. Use Value: Sleep mode (ZZ pin) enables microamp-level standby current during idle periods - extends uptime in battery-backed industrial deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-133BZI | 128K × 18-bit organization, 3.3V core/I/O, 133 MHz, no JTAG, different pinout (119-ball BGA) | Requires two devices for 36-bit width; lacks ZBT™ burst optimization and sleep mode | Select when footprint flexibility and BGA assembly are prioritized over ZBT™ latency and power features |
| AS7C3256A-133JCIN | 128K × 32-bit organization, 3.3V, 133 MHz, asynchronous OE, no burst counter or JTAG | Lower pin count (86-pin SOJ), no ADV/LD or LBO control - limited to basic synchronous operation | Select for cost-sensitive designs where burst efficiency and testability are non-critical |
Compared with CY7C1355BV18-133BZI and AS7C3256A-133JCIN, the 71V3558SA133BQG8 delivers unique ZBT™ zero-turnaround timing, integrated 4-word burst counter, and industrial-grade JTAG testability - making it optimal for latency-sensitive telecom and networking systems where deterministic performance and field-test readiness are mandatory.
Availability
71V3558SA133BQG8 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, and industrial baseband units requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature compliance.
Supply support for 71V3558SA133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V3558SA133BQG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency bus turnaround in high-speed packet-switching, telecom transport, and real-time signal processing applications.
FAQ
What does the 'SA' suffix indicate in 71V3558SA133BQG8?
The 'SA' suffix denotes the inclusion of IEEE 1149.1-compliant JTAG boundary-scan functionality. This version integrates TMS, TDI, TCK, TDO, and optional TRST pins - enabling structural test and interconnect verification not present in the base 'S' variant. The 71V3558SA133BQG8 uses these pins for board-level diagnostics in telecom and networking hardware.
How does the ZBT™ feature improve system performance in 71V3558SA133BQG8?
The ZBT™ (Zero Bus Turnaround) architecture in the 71V3558SA133BQG8 eliminates dead cycles between consecutive read and write operations. By allowing immediate transition from write to read (or vice versa) without bus idle time, it increases effective bandwidth by up to 30% in burst-intensive applications like packet buffering - a measurable advantage over conventional synchronous SRAMs.
What is the function of the ADV/LD pin in 71V3558SA133BQG8?
The ADV/LD pin in the 71V3558SA133BQG8 controls burst address sequencing: when sampled low at the rising CLK edge, it loads a new external address; when sampled high, it advances the internal 4-word burst counter. This dual-mode operation enables both random access and efficient sequential burst transfers - a core enabler of the device's ZBT™ behavior.
Does 71V3558SA133BQG8 support industrial temperature operation?
Yes, the 71V3558SA133BQG8 is rated for industrial temperature operation from –40°C to +85°C. This specification is validated per the manufacturer's recommended operating conditions and absolute maximum ratings, making it suitable for deployment in carrier-grade telecom equipment, outdoor base stations, and ruggedized industrial controllers where ambient thermal stress is expected.
Can the 71V3558SA133BQG8 be used in a 256K × 18-bit configuration?
No - the 71V3558SA133BQG8 is specifically configured as 128K × 36-bit. While the broader 71V3558 family includes 256K × 18-bit variants (e.g., 71V3558S133BQG8), the 'SA' suffix and '133' speed grade in 71V3558SA133BQG8 correspond exclusively to the 128K × 36-bit organization, as confirmed by pinout diagrams, functional block diagrams, and truth tables in the official datasheet.
71V3558SA133BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3558SA133BQG8 FAQ
1.How can I place an order for 71V3558SA133BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558SA133BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558SA133BQG8 reliable?
The price and inventory of 71V3558SA133BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558SA133BQG8 is usually 5 days.
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Once your 71V3558SA133BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558SA133BQG8?
For technical support, including 71V3558SA133BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558SA133BQG8 requirements.
6.How does Aetrix verify that 71V3558SA133BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V3558SA133BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558SA133BQG8 meets industry standards.
7.What is the process for return or replacement of 71V3558SA133BQG8?
All 71V3558SA133BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558SA133BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558SA133BQG8 part is unused and in its original packaging.
Return procedure for 71V3558SA133BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558SA133BQG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
Microchip Technology
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