Renesas 71V3558SA133BQGI

Overview

71V3558SA133BQGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial embedded memory subsystems.

For engineers reviewing the 71V3558SA133BQGI datasheet, 71V3558SA133BQGI pinout, 71V3558SA133BQGI application, or 71V3558SA133BQGI equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V I/O and core supply, JTAG IEEE 1149.1 support, and industrial temperature qualification - all critical for high-throughput packet buffering and cache coherency in networking ASIC interfaces.

Technical Context

The 71V3558SA133BQGI implements a fully synchronous, positive-edge-triggered pipeline with address/control/data registers clocked on CLK rising edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from data transfer timing.

It integrates an on-chip burst counter, selectable linear/interleaved burst order via LBO, and three chip enables (CE1, CE2, CE2) for depth expansion. Optional IEEE 1149.1 JTAG boundary scan is supported, with TRST, TMS, TDI, TCK, and TDO pins available in BGA packages - though not implemented in the TQFP variant of this specific part.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 tolerate VIH-level inputs without direct VDD connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV133BZC and AS7C33128PFSI-133BIN, the 71V3558SA133BQGI uniquely delivers ZBT™ zero-turnaround operation in an industrial-qualified TQFP package with integrated JTAG and sleep mode - making it optimal for timing-critical, field-deployed networking and control systems requiring guaranteed interoperability and testability.

Availability

71V3558SA133BQGI is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor cache interfaces, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and verified industrial temperature performance.

Supply support for 71V3558SA133BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V3558SA133BQGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround bus protocols in high-throughput networking ASICs, routers, and telecom baseband processors.

FAQ

What is the memory organization and density of the 71V3558SA133BQGI?

The 71V3558SA133BQGI is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. It also supports 256K × 18-bit mode via address pin mapping, maintaining full pin compatibility and timing behavior in both configurations. This dual-mode flexibility allows system designers to optimize data bus width without changing the 71V3558SA133BQGI footprint or timing constraints.

Does the 71V3558SA133BQGI support JTAG boundary scan, and which package types include it?

The 71V3558SA133BQGI includes optional IEEE 1149.1 JTAG boundary scan functionality, but only in BGA packages (BG119/BQ165). The "SA" suffix denotes JTAG support, yet the TQFP-100 package (indicated by "BQGI") does not route TMS, TDI, TCK, TDO, or TRST pins - they are NC. Therefore, JTAG is not accessible on the 71V3558SA133BQGI; it is available only on BGA variants like 71V3558SA133BGIG.

How does the ZBT™ feature improve system performance compared to standard synchronous SRAMs?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3558SA133BQGI eliminates dead cycles between successive read and write operations by decoupling bus direction control from data transfer timing. Unlike conventional SRAMs that require idle cycles to change bus direction, the 71V3558SA133BQGI allows immediate back-to-back reads and writes at full 133 MHz - increasing effective bandwidth by up to 30% in burst-intensive applications such as packet buffering and cache coherency protocols.

What is the function of the ADV/LD and LBO pins on the 71V3558SA133BQGI?

On the 71V3558SA133BQGI, ADV/LD is a synchronous input that loads a new external address when low (ADV/LD = L) or advances the internal burst counter when high (ADV/LD = H). LBO is a static input selecting burst order: low enables linear addressing (0,1,2,3), high enables interleaved (0,2,1,3). Both signals are essential for configuring the 4-word burst behavior - a core timing advantage of the 71V3558SA133BQGI in streaming memory applications.

Can the 71V3558SA133BQGI operate with different supply voltages for core and I/O rails?

No - the 71V3558SA133BQGI requires matched 3.3 V ±5% supplies on both VDD (core) and VDDQ (I/O) rails. While physically separate pins, they must be tied to the same 3.3 V source per datasheet specification. Deviating from this violates the recommended operating conditions and risks timing violations or data corruption, as the device's internal register synchronization depends on tightly coupled voltage domains. This constraint applies uniformly across all 71V3558SA133BQGI operating modes and temperature ranges.