Renesas 71V3558SA133BQGI8

Overview

71V3558SA133BQGI8 from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz operation (7.5 ns clock-to-data), pipelined outputs, and JTAG boundary scan (IEEE 1149.1). It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial embedded memory subsystems.

For engineers reviewing the 71V3558SA133BQGI8 datasheet, 71V3558SA133BQGI8 pinout, 71V3558SA133BQGI8 application, or 71V3558SA133BQGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and JTAG test interface availability in the SA variant.

Technical Context

The 71V3558SA133BQGI8 implements a fully synchronous, pipelined architecture where address/control registration occurs on the rising CLK edge, with data access occurring two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from OE and using internal synchronization of output enable.

It integrates a programmable burst counter (LBO-selectable linear/interleaved), three chip enables (CE1, CE2 active-low; CE2 active-high), and a dedicated sleep mode (ZZ) that gates CLK internally while guaranteeing data retention. The SA version includes optional IEEE 1149.1-compliant JTAG (TMS/TDI/TCK/TDO/TRST) for boundary scan testing.

Key Specifications

Pinout & Package

71V3558SA133BQGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level input without direct VDD connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3558SA133BQGI8, the BG108 alternative offers higher density at the cost of assembly complexity, while the 100 MHz variant trades speed for margin and cost - both preserve ZBT™ functionality, JTAG, and industrial temperature range.

Availability

71V3558SA133BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data caching, telecom baseband processing, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.

Supply support for 71V3558SA133BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3558SA133BQGI8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-performance, low-latency memory subsystems in networking, telecommunications, and real-time industrial control where deterministic timing and bus efficiency are critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V3558SA133BQGI8?

The 71V3558SA133BQGI8 is rated for 133 MHz operation, delivering a 7.5 ns clock-to-data access time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. Timing parameters assume proper setup/hold compliance relative to the rising CLK edge and valid CEN/CE states.

Does the 71V3558SA133BQGI8 support both linear and interleaved burst modes, and how is selection controlled?

Yes, the 71V3558SA133BQGI8 supports both linear and interleaved 4-word burst sequences. Selection is controlled by the static LBO (Linear Burst Order) input: LBO = LOW selects linear order; LBO = HIGH selects interleaved order. LBO must remain stable during burst operation and is sampled asynchronously but affects only burst counter behavior.

How does the ZBT™ feature eliminate dead cycles between read and write operations in the 71V3558SA133BQGI8?

The 71V3558SA133BQGI8 implements ZBT™ by decoupling bus direction control from external OE and using internally synchronized output enable logic. This allows immediate transition from write to read (or vice versa) without waiting for bus turnaround delays - the next valid R/W cycle begins on the subsequent clock edge with no inserted idle cycles.

What JTAG signals are implemented on the 71V3558SA133BQGI8, and is TRST mandatory?

The 71V3558SA133BQGI8 implements full IEEE 1149.1 JTAG boundary scan with TMS, TDI, TCK, TDO, and optional TRST. TRST is asynchronous and optional - if unused, it may be left floating (internally pulled up). JTAG functionality is exclusive to the "SA" variant and is not present in base "S" versions.

Can the 71V3558SA133BQGI8 operate with only one chip enable asserted, and what happens during deselect?

Yes - the 71V3558SA133BQGI8 requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH for selection; asserting any one of these to its inactive state initiates deselect. Deselect is two-cycle deep: pending transfers complete, then the data bus tri-states two clocks after the deselect condition is sampled. This ensures deterministic bus release timing.