Renesas 71V3558SA166BQG
- Part No.:
- 71V3558SA166BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3558SA166BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3558SA166BQG from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and integrated burst counter. It supports interleaved/linear 4-word bursts, individual byte write control (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking line cards and packet buffering systems requiring deterministic latency and no dead cycles between read/write transitions.
For engineers reviewing the 71V3558SA166BQG datasheet, 71V3558SA166BQG pinout, 71V3558SA166BQG application, or 71V3558SA166BQG equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, industrial temperature support (–40°C to +85°C), and JTAG-enabled testability for production validation.
Technical Context
The 71V3558SA166BQG implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH, supporting linear or interleaved sequences selected by LBO. Output enable (OE) is asynchronous, while all other inputs-including R/W, CEN, CE1/CE2/CE2, and BWx-are synchronized to CLK's rising edge.
ZBT™ operation eliminates bus turnaround dead cycles via internally synchronized output buffer enable and dual-cycle pipelining: address/control latched on cycle N, data transfer occurs on cycle N+2. The device integrates three chip enables for depth expansion, sleep mode (ZZ), and optional IEEE 1149.1 JTAG for boundary scan-available only in BGA/fBGA packages, not in this TQFP variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit configuration via pin strapping |
| Max Clock Frequency | 166 MHz; enables 3.5 ns clock-to-data access time for real-time packet buffering |
| Supply Voltage | VDD = VDDQ = 3.3 V ±5%; separate core and I/O rails reduce noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; validated for telecom infrastructure deployment |
| Burst Capability | 4-word linear or interleaved burst; LBO pin selects sequence order statically |
| Write Control | Four independent byte write enables (BW1–BW4); allows partial 9-bit byte writes without masking logic |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); lead-free and RoHS-compliant |
Pinout & Package
71V3558SA166BQG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-140AC, 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top view orientation per datasheet drawing 5281 drw 02.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A16 used for 128K×36 mode; A17 unused but must be tied LOW |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous registers latch on rising edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle direction; determines read vs. write two cycles later |
| ADV/LD | Burst Address Advance / Load | Loads new external address when LOW; increments internal burst counter when HIGH |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables for depth expansion; CE1/CE2 active LOW, CE2 active HIGH; any false deselects device |
| BW1–BW4 | Byte Write Enables | Active-LOW 9-bit byte masks; BW1 controls I/O[0:7]+I/OP1, BW4 controls I/O[24:31]+I/OP4 |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure at 166 MHz |
| OE | Output Enable | Asynchronous active-LOW control; tri-states outputs immediately regardless of clock state |
| LBO | Burst Order Select | Static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; VSS = common ground; decoupling required per pin |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes; enables continuous 166 MHz throughput without interlock logic |
| Pipelined Output Buffer Enable | Internally synchronized OE replacement; removes need for external OE timing control in high-speed designs |
| 4-Word Burst Counter | Reduces address bus traffic by 75% for sequential accesses; LBO pin configures linear/interleaved sequence |
| Individual Byte Write Control | Four dedicated BWx pins allow selective 9-bit writes; avoids full-word read-modify-write overhead |
| Three Chip Enables | Supports seamless memory depth expansion without external decode logic or glue logic |
| Sleep Mode (ZZ) | Active-HIGH synchronous entry into low-power state; guarantees data retention while reducing dynamic power |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in network switches/routers before forwarding decisions. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing deterministic 3.5 ns read latency and zero-turnaround write-read transitions. Use Value: Enables line-rate packet processing at OC-48/STM-16 speeds without FIFO bottlenecks or arbitration delays. |
Use Scenario: Serving as control-plane memory in carrier-grade DSLAMs or optical transport units requiring industrial temp operation. IC Role / Device Role / Timing Role: Synchronous ZBT™ SRAM interfacing directly with FPGA-based traffic managers and microcontrollers. Use Value: Supports reliable operation across –40°C to +85°C ambient with validated 166 MHz timing margins. |
| Baseband Processing Buffer | Test Equipment Data Capture |
Use Scenario: Temporary storage of IQ samples in LTE/5G baseband processors prior to FFT or channel estimation. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for burst-mode sample streaming between ADC/DAC and DSP cores. Use Value: 4-word burst capability matches typical FFT block sizes; eliminates address generation overhead per sample group. |
Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) with precise timestamp alignment. IC Role / Device Role / Timing Role: Synchronous SRAM acting as deep capture buffer synchronized to system clock and trigger signals. Use Value: Pipelined register interface ensures setup/hold compliance at 166 MHz; ZZ sleep mode reduces idle power during calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3558SA133BQG | Slower 133 MHz max frequency (4.5 ns access); identical pinout, voltage, and feature set | Suitable for cost-sensitive designs where 166 MHz bandwidth is unnecessary | Select when system clock ≤133 MHz and thermal/power budget is tighter |
| AS7C3256A-15JIN | Standard sync SRAM (no ZBT™); 15 ns access; 256K × 16-bit; 100-pin TQFP; no burst counter or JTAG | Applicable where zero-turnaround is not required and lower bandwidth suffices | Choose for legacy designs needing drop-in replacement without ZBT™ complexity |
Compared with 71V3558SA166BQG, the 133 MHz variant trades speed for lower power and cost while retaining full functional compatibility; the AS7C3256A lacks ZBT™, burst, and JTAG-making it suitable only for non-pipelined, lower-throughput applications.
Availability
71V3558SA166BQG is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply, long-term industrial temperature support, and verified ZBT™ timing compliance.
Supply support for 71V3558SA166BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and communications markets.
The 71V3558SA series belongs to Renesas' high-performance synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in telecom infrastructure, networking equipment, and real-time signal processing systems.
FAQ
What is the maximum operating frequency of the 71V3558SA166BQG?
The 71V3558SA166BQG is rated for a maximum clock frequency of 166 MHz, delivering a guaranteed 3.5 ns clock-to-data access time under industrial temperature conditions (–40°C to +85°C) and 3.3 V ±5% supply. This performance is validated across all 128K × 36-bit configurations and requires adherence to specified setup/hold timing margins relative to CLK.
Does the 71V3558SA166BQG support JTAG boundary scan?
No, the 71V3558SA166BQG in the TQFP-100 package does not support JTAG boundary scan. While the "SA" suffix denotes JTAG capability in BGA/fBGA variants (e.g., BG119 or BQ165), the BQG suffix confirms this is the TQFP version, which omits TMS/TDI/TCK/TDO/TRST pins per pin configuration drawings 5281 drw 02 and 5281 tbl 01.
How does the ZBT™ feature eliminate bus turnaround dead cycles in the 71V3558SA166BQG?
The 71V3558SA166BQG achieves zero bus turnaround by using an internally synchronized output buffer enable and a two-cycle pipelined architecture: address/control signals sampled on cycle N result in data transfer on cycle N+2. This allows immediate transition from write to read (or vice versa) without waiting for bus release, enabling sustained 166 MHz throughput in burst-intensive applications.
What is the function of the ADV/LD and LBO pins on the 71V3558SA166BQG?
On the 71V3558SA166BQG, ADV/LD is a synchronous input that loads a new external address when LOW or advances the internal burst counter when HIGH. LBO is a static input selecting burst order: LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,3,1); LBO must remain stable during burst operation to prevent address misalignment.
Can the 71V3558SA166BQG operate in both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3558SA166BQG supports both configurations. In 128K × 36 mode, A0–A16 address 128K words with all 36 I/O bits active; in 256K × 18 mode, A0–A17 address 256K words with I/O0–I/O17 and I/OP1–I/OP2 active. Pin configuration differs slightly between modes-verified in datasheet drawings 5281 drw 02 and 5281 drw 02a-and requires correct PCB layout per selected mode.
71V3558SA166BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3558SA166BQG FAQ
1.How can I place an order for 71V3558SA166BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558SA166BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558SA166BQG reliable?
The price and inventory of 71V3558SA166BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558SA166BQG is usually 5 days.
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5.How can I obtain technical support or documentation for 71V3558SA166BQG?
For technical support, including 71V3558SA166BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558SA166BQG requirements.
6.How does Aetrix verify that 71V3558SA166BQG is sourced from the original manufacturer or authorized distributors?
All 71V3558SA166BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558SA166BQG meets industry standards.
7.What is the process for return or replacement of 71V3558SA166BQG?
All 71V3558SA166BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558SA166BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558SA166BQG part is unused and in its original packaging.
Return procedure for 71V3558SA166BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558SA166BQG Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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