My Inquiry
My Account
Renesas 71V3558SA166BQGI8
- Part No.:
- 71V3558SA166BQGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3558SA166BQGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,182
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3558SA166BQGI8 from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and integrated JTAG boundary scan (IEEE 1149.1). It supports interleaved/linear 4-word burst reads/writes and individual byte write control (BW1–BW4), targeting high-throughput memory subsystems in network switches and telecom line cards.
For engineers reviewing the 71V3558SA166BQGI8 datasheet, 71V3558SA166BQGI8 pinout, 71V3558SA166BQGI8 application, or 71V3558SA166BQGI8 equivalent, key selection criteria include ZBT™ bus efficiency, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and JTAG testability for production validation.
Technical Context
The 71V3558SA166BQGI8 implements a fully synchronous, clock-edge-triggered architecture with dual-register pipeline stages for address/control and data I/O paths. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from OE timing.
It integrates a programmable burst counter (LBO-selectable linear/interleaved), three chip enables (CE1, CE2, CE2) for depth expansion, and an optional IEEE 1149.1-compliant JTAG interface with TMS/TDI/TCK/TDO/TRST pins - all validated for the SA variant per functional block diagrams and pin definitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via configuration - enables flexible data bus width matching in 32/36-bit systems. |
| Max Clock Frequency | 166 MHz; guarantees 3.5 ns clock-to-data access time - meets timing closure for high-speed packet buffering at OC-192+ rates. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling and support mixed-voltage system integration. |
| Burst Capability | 4-word burst (linear or interleaved); LBO pin selects sequence - reduces address bus traffic by 75% during sequential accesses. |
| Operating Temperature | –40°C to +85°C industrial grade; qualified per JEDEC JESD22-A108 - suitable for uncontrolled ambient telecom and industrial control environments. |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST; TRST optional and internally pulled up - enables boundary-scan testing without external pull-ups. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); pin-compatible with IDT71V3556/3558 SA variants - simplifies PCB reuse across memory density options. |
Pinout & Package
71V3558SA166BQGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not specified. Pin functions are synchronized to CLK rising edge except OE (asynchronous) and LBO/TRST/ZZ (static or asynchronous).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A16 used for 128K×36 mode - supports full addressing with no external decoding overhead. |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous registers (address, control, I/O) sample on this edge - defines timing reference for entire device. |
| R/W | Read/Write Control | Synchronous command signal; sampled with ADV/LD to initiate load cycle - determines data direction two clocks later, enabling precise bus arbitration. |
| ADV/LD | Burst Counter Control | Loads new address (LOW) or advances internal counter (HIGH); synchronizes burst sequencing without external logic - eliminates glue logic in burst-oriented designs. |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial writes without read-modify-write - critical for protocol header updates in networking stacks. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables with mixed polarity (CE1/CE2 active low, CE2 active high); enable depth expansion with no additional decode logic - supports up to 8× density scaling. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations - ensures clean setup/hold margins at 166 MHz. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary-scan signals; TRST optional and internally pulled up - enables in-circuit test and debug without board-level pull resistors. |
| ZZ | Sleep Mode Input | Active-high synchronous sleep control; gates internal CLK and reduces power while retaining data - supports low-power idle states in energy-sensitive systems. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions by removing OE dependency - increases effective bus utilization by up to 30% in mixed-access workloads. |
| Pipelined Address & Data Paths | Two-stage register pipeline (address/control + I/O) synchronized to single CLK edge - enables deterministic 2-cycle latency and simplifies timing analysis. |
| Programmable Burst Order | LBO pin selects linear or interleaved 4-word burst sequence - matches CPU cache line or DMA engine access patterns without firmware intervention. |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit byte writes - avoids destructive full-word writes when updating status fields or packet headers. |
| Three-Chip-Enable Architecture | CE1 (active low), CE2 (active low), CE2 (active high) support seamless depth expansion - enables 1M×36 or 2M×18 configurations using identical parts. |
| Integrated JTAG Boundary Scan | Full IEEE 1149.1 compliance with optional TRST - provides production-test visibility into solder joints and interconnects without adding test points. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to switch fabric ASICs via 36-bit parallel bus. Use Value: ZBT™ eliminates bus turnaround delay, enabling back-to-back packet reads/writes at line rate; 166 MHz clock supports >5 Gbps sustained throughput. |
Use Scenario: Frame buffering in OC-48/OC-192 SONET/SDH line cards requiring deterministic access and industrial temperature operation. IC Role / Device Role / Timing Role: Synchronous SRAM acting as payload FIFO and control table store for framer and mapper ICs. Use Value: Pipelined outputs and 3.5 ns clock-to-data ensure sub-6 ns access repeatability; –40°C to +85°C rating guarantees reliability in chassis-mounted telecom hardware. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
|
Use Scenario: Real-time logging of sensor data streams and control loop histories in programmable logic controllers deployed in factory environments. IC Role / Device Role / Timing Role: Nonvolatile-capable memory buffer (with external backup) holding timestamped process variables and alarm records. Use Value: Individual byte write (BW1–BW4) enables efficient updates of discrete status bits without overwriting adjacent data; ZZ sleep mode reduces standby power during idle periods. |
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for semiconductor wafer probing and board-level functional testing. IC Role / Device Role / Timing Role: High-reliability pattern memory accessed by high-speed digital pattern generator ASICs. Use Value: JTAG boundary scan validates interconnect integrity before test execution; 100-pin TQFP allows dense placement on ATE controller boards with minimal routing congestion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3558SA133BQGI8 | Slower speed grade: 133 MHz max (4.5 ns access), same 128K×36 organization, TQFP package, and SA feature set. | Lower bandwidth requirement; suitable for cost-sensitive industrial controllers where 166 MHz is unnecessary. | Select when system clock domain operates ≤133 MHz and BOM cost reduction is prioritized over peak throughput. |
| 71V3556SA166BQGI8 | Same speed (166 MHz) and package, but 256K×18 organization (same 4.5 Mbit density); different address/data pin mapping and burst behavior. | Requires 18-bit data bus and modified address decoding; appropriate for legacy 16/18-bit microprocessor interfaces. | Choose only if existing design uses 18-bit bus width or requires pin-for-pin compatibility with 71V3556-based layouts. |
Compared with 71V3558SA133BQGI8, the 71V3558SA166BQGI8 delivers 25% higher bandwidth for real-time packet processing; versus 71V3556SA166BQGI8, it provides native 36-bit data path alignment, eliminating external multiplexing for 32-bit CPU or ASIC interfaces.
Availability
71V3558SA166BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V3558SA166BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with deep expertise in memory, microcontrollers, and analog/power devices.
The 71V3558SA166BQGI8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in communications infrastructure and real-time control systems.
FAQ
What is the memory organization and total capacity of the 71V3558SA166BQGI8?
The 71V3558SA166BQGI8 is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports direct interfacing with 32-bit or 36-bit data buses common in network processors and telecom ASICs, and is distinct from the 256K × 18-bit variant offered in the same SA family.
Does the 71V3558SA166BQGI8 support JTAG boundary scan, and which pins are required?
Yes, the 71V3558SA166BQGI8 includes IEEE 1149.1-compliant JTAG boundary scan. Required pins are TMS, TDI, TCK, and TDO; TRST is optional and internally pulled up. These signals are implemented on the SA version and documented in the pin configuration diagrams for the 100-pin TQFP package.
How does the ZBT™ feature improve bus efficiency in the 71V3558SA166BQGI8?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3558SA166BQGI8 eliminates dead cycles between consecutive read and write operations by removing dependence on OE timing. This allows immediate bus direction reversal, increasing effective throughput by up to 30% in mixed-access memory subsystems such as packet buffers and frame stores.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3558SA166BQGI8?
ADV/LD controls burst sequencing: LOW loads a new external address, HIGH advances the internal burst counter. LBO selects burst order - LOW enables linear sequence, HIGH enables interleaved. Both are static inputs validated for the SA variant and directly determine how four consecutive addresses are generated during burst cycles.
Is the 71V3558SA166BQGI8 rated for industrial temperature operation?
Yes, the 71V3558SA166BQGI8 is qualified for industrial temperature range (–40°C to +85°C), as confirmed in the "Recommended Operating Temperature and Supply Voltage" table. This rating applies to the BQGI8 suffix and ensures reliable operation in uncontrolled ambient environments like telecom chassis and factory-floor PLCs.
71V3558SA166BQGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3558SA166BQGI8 FAQ
1.How can I place an order for 71V3558SA166BQGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3558SA166BQGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3558SA166BQGI8 reliable?
The price and inventory of 71V3558SA166BQGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3558SA166BQGI8 is usually 5 days.
3.What payment methods are accepted for 71V3558SA166BQGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3558SA166BQGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3558SA166BQGI8?
71V3558SA166BQGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3558SA166BQGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3558SA166BQGI8?
For technical support, including 71V3558SA166BQGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3558SA166BQGI8 requirements.
6.How does Aetrix verify that 71V3558SA166BQGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3558SA166BQGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3558SA166BQGI8 meets industry standards.
7.What is the process for return or replacement of 71V3558SA166BQGI8?
All 71V3558SA166BQGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3558SA166BQGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3558SA166BQGI8 part is unused and in its original packaging.
Return procedure for 71V3558SA166BQGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3558SA166BQGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
