Renesas 71V3559S75BQ

Overview

71V3559S75BQ from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache controllers. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1).

For engineers reviewing the 71V3559S75BQ datasheet, 71V3559S75BQ pinout, 71V3559S75BQ application, or 71V3559S75BQ equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst mode configuration via LBO, and support for synchronous chip enable (CE1/CE2/CE2) and clock enable (CEN) control.

Technical Context

The 71V3559S75BQ implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data cycles per address load.

ZBT™ operation eliminates dead cycles between read/write transitions by decoupling bus direction control from OE - output enable is asynchronous but internally synchronized, and R/W is the sole bus direction signal. Sleep mode (ZZ) gates CLK to reduce power while retaining data, and JTAG test logic supports IEEE 1149.1 compliance with optional TRST.

Key Specifications

Pinout & Package

71V3559S75BQ is packaged in a JEDEC-standard 100-pin TQFP (14 mm × 20 mm) with exposed thermal pad. Pin functions are fully defined for 128K x 36 configuration; pins 83–84 are reserved, and pin 64 supports ZZ (sleep mode) on latest die revisions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV33-100BAXI and AS7C33128PFSIG, the 71V3559S75BQ uniquely integrates flow-through outputs, hardware burst counter with LBO selection, and JTAG boundary scan - delivering lower system-level timing complexity, reduced external logic count, and enhanced test coverage for high-reliability embedded designs.

Availability

71V3559S75BQ is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache controller, telecom line card memory, and industrial real-time controller applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V3559S75BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 71V3559S75BQ belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround memory subsystems in high-throughput networking and real-time embedded systems demanding deterministic latency and burst efficiency.

FAQ

What is the memory organization and total capacity of the 71V3559S75BQ?

The 71V3559S75BQ is organized as 128K words × 36 bits, providing a total capacity of 4,718,592 bits (4.5 Mbit). It supports the same pinout and timing as the 256K × 18 variant (71V3557S75BQ), allowing layout reuse across both configurations. Address lines A0–A17 are used for 128K × 36 operation.

How does the ZBT™ feature eliminate dead cycles in the 71V3559S75BQ?

The ZBT™ feature in the 71V3559S75BQ removes dead cycles by enabling immediate bus direction reversal between reads and writes without requiring OE deassertion or wait states. The internal control logic manages bus timing autonomously, and the single R/W pin determines direction one cycle before data transfer - ensuring continuous throughput at 100 MHz.

What is the function of the ADV/LD and LBO pins on the 71V3559S75BQ?

On the 71V3559S75BQ, ADV/LD is a synchronous input that loads a new external address when LOW and advances the internal burst counter when HIGH. LBO is a static input selecting burst order: LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,1,3). LBO must remain stable during burst operation to prevent address corruption.

Does the 71V3559S75BQ support JTAG boundary scan, and which pins are involved?

Yes, the 71V3559S75BQ supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST implement the test access port. TRST is asynchronous and pulled up internally; if unused, it may be left floating. All JTAG signals are synchronous except TRST, and TDO is three-state controlled by the TAP controller.

What are the power supply requirements and thermal characteristics of the 71V3559S75BQ?

The 71V3559S75BQ requires two 3.3 V supplies: VDD (core, 3.135–3.465 V) and VDDQ (I/O, 3.135–3.465 V), each with ±5% tolerance. It operates from –40°C to +85°C (industrial grade) and features a ZZ pin for synchronous sleep mode, reducing dynamic power while guaranteeing data retention. Absolute max power dissipation is 2.0 W.