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Renesas 71V3559S75BQ8

Name: 71V3559S75BQ8
Brand: Renesas
SKU: 71V3559S75BQ8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3559S75BQ8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V3559S75BQ8.pdf

Description:: IC SRAM 4.5MBIT PAR 165CABGA

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Product details

Overview

71V3559S75BQ8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache controllers. It operates at 100 MHz with 7.5 ns clock-to-data access and supports individual byte write control via BW1–BW4.

For engineers reviewing the 71V3559S75BQ8 datasheet, 71V3559S75BQ8 pinout, 71V3559S75BQ8 application, or 71V3559S75BQ8 equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V core/I/O supply compliance, JTAG boundary scan support, and synchronous burst counter behavior under ADV/LD and LBO control.

Technical Context

The 71V3559S75BQ8 implements a synchronous dual-edge-triggered address/control register architecture with a dedicated burst counter that advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load. Its flow-through output path eliminates output register latency, while OE remains asynchronous for flexible bus control.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow depth expansion without external logic, and CEN suspends all synchronous operation without affecting output state. The device integrates IEEE 1149.1-compliant JTAG test circuitry with optional TRST, supporting boundary scan verification in production and debug environments.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); supports 256K × 18 mode via pin strapping
Clock Frequency	100 MHz maximum - enables 10 ns cycle time for high-bandwidth data streaming
Access Time	7.5 ns clock-to-data - defines minimum latency from CLK rising edge to valid output
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation
Burst Mode	4-word linear/interleaved burst controlled by static LBO pin - reduces address bus traffic by 75%
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard) - compatible with automated SMT assembly
JTAG Support	IEEE 1149.1-compliant boundary scan with TMS/TDI/TCK/TDO/TRST - enables PCB-level interconnect testing

Pinout & Package

71V3559S75BQ8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Pin	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous inputs latched on rising CLK edge when ADV/LD = LOW and chip enabled
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 low-active, CE2 high-active) for depth expansion and deselect control
R/W	Read/Write Control	Synchronous signal determining cycle type; sampled at rising CLK edge with ADV/LD = LOW
ADV/LD	Advance Burst / Load Address	High = increment internal burst counter; Low = load new external address into register
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence (LBO = LOW → linear; HIGH → interleaved)
BW1–BW4	Byte Write Enables	Four synchronous active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
CLK	System Clock Input	Primary timing reference; all synchronous inputs referenced to rising edge
OE	Output Enable	Asynchronous control; drives I/O pins to high-Z when HIGH - no timing coordination required
ZZ	Sleep Mode Input	Synchronous HIGH entry to low-power retention mode; data retained, CLK gated internally
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus with registered input path and flow-through output path
TMS, TDI, TCK, TDO, TRST	JTAG Test Interface	IEEE 1149.1 boundary scan chain; TRST optional asynchronous reset (internal pullup)

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between read/write transitions - enables back-to-back memory accesses without bus idle time
Flow-Through Outputs	No output register; data appears on I/O bus one clock cycle after read initiation - minimizes read latency
4-Word Burst Counter	Internally generates sequential addresses for four consecutive transfers - reduces address bus bandwidth by 75%
Individual Byte Write Control	BW1–BW4 enable selective 9-bit writes without masking logic - simplifies partial-word update implementation
Three Chip Enables	Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic combinations
JTAG Boundary Scan	Full IEEE 1149.1 compliance with TAP controller - enables automated PCB interconnect test and debug visibility

Applications

Network Packet Buffering	Cache Controller Memory
Use Scenario: High-speed buffering of variable-length Ethernet/IP packets in switch fabric ASICs. IC Role / Device Role / Timing Role: Primary data store for ingress/egress packet queues with deterministic 7.5 ns read access and zero-turnaround write-read switching. Use Value: Enables line-rate forwarding at 10 Gbps+ by eliminating bus idle cycles during burst reads/writes across 36-bit data path.	Use Scenario: Secondary cache tag/data storage in RISC-based embedded processors with burst-capable bus interfaces. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, pipelined access to cache lines with programmable burst order (linear/interleaved). Use Value: Reduces average memory access time by 4× via 4-word burst mode, matching processor burst fetch patterns without external address generation.
Telecom Line Card Memory	Industrial Real-Time Controller Buffer
Use Scenario: Frame buffering in TDM-over-packet gateways requiring jitter-free, deterministic memory access. IC Role / Device Role / Timing Role: ZBT™ SRAM serving as frame FIFO with synchronized clock domain crossing between line interface and packet engine. Use Value: Guarantees sub-10 ns timing consistency across temperature range (–40°C to +85°C), critical for jitter-sensitive telecom applications.	Use Scenario: Data logging and motion control buffer in PLCs where deterministic interrupt response and data coherency are mandatory. IC Role / Device Role / Timing Role: Dual-port accessible memory with sleep mode (ZZ) for power-gated operation during idle intervals. Use Value: Maintains data integrity in Sleep Mode while reducing system power consumption by >60% versus continuous operation.

Network Packet Buffering

Cache Controller Memory

Use Scenario: High-speed buffering of variable-length Ethernet/IP packets in switch fabric ASICs.

IC Role / Device Role / Timing Role: Primary data store for ingress/egress packet queues with deterministic 7.5 ns read access and zero-turnaround write-read switching.

Use Value: Enables line-rate forwarding at 10 Gbps+ by eliminating bus idle cycles during burst reads/writes across 36-bit data path.

Use Scenario: Secondary cache tag/data storage in RISC-based embedded processors with burst-capable bus interfaces.

IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, pipelined access to cache lines with programmable burst order (linear/interleaved).

Use Value: Reduces average memory access time by 4× via 4-word burst mode, matching processor burst fetch patterns without external address generation.

Telecom Line Card Memory

Industrial Real-Time Controller Buffer

Use Scenario: Frame buffering in TDM-over-packet gateways requiring jitter-free, deterministic memory access.

IC Role / Device Role / Timing Role: ZBT™ SRAM serving as frame FIFO with synchronized clock domain crossing between line interface and packet engine.

Use Value: Guarantees sub-10 ns timing consistency across temperature range (–40°C to +85°C), critical for jitter-sensitive telecom applications.

Use Scenario: Data logging and motion control buffer in PLCs where deterministic interrupt response and data coherency are mandatory.

IC Role / Device Role / Timing Role: Dual-port accessible memory with sleep mode (ZZ) for power-gated operation during idle intervals.

Use Value: Maintains data integrity in Sleep Mode while reducing system power consumption by >60% versus continuous operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1355BV18-100BZI	256K × 18 organization, 100 MHz, same TQFP-100 package but no JTAG or ZZ pin	Lacks sleep mode and boundary scan; suited for cost-sensitive non-test-critical designs	Select when JTAG testability and low-power sleep are not required and 18-bit data width suffices
AS7C33128PFSIG	128K × 32 organization, 133 MHz, 3.3V, no burst counter or ZBT™ feature	Higher speed but no zero-turnaround or burst addressing - requires external address sequencing logic	Choose only if raw access speed outweighs bus efficiency gains and external control logic is acceptable

Compared with CY7C1355BV18-100BZI and AS7C33128PFSIG, the 71V3559S75BQ8 uniquely delivers ZBT™ timing, integrated burst counter, JTAG testability, and sleep mode in a single 128K × 36 device - making it optimal for high-efficiency, test-ready, and power-aware embedded memory subsystems.

Availability

71V3559S75BQ8 is available at Aetrix Electronics and suitable for network packet buffering, cache controller memory, and telecom line card applications requiring stable component supply, long-term lifecycle support, and industrial temperature grade (–40°C to +85°C) performance.

Supply support for 71V3559S75BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 71V3559S75BQ8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in networking and real-time embedded systems where bus efficiency and deterministic timing are critical.

FAQ

What does the 'S75' suffix in 71V3559S75BQ8 indicate?

The 'S75' suffix denotes a 7.5 ns clock-to-data access time rating at 100 MHz operation. This specifies the guaranteed maximum delay from the rising edge of CLK to valid data appearing on the I/O bus during read cycles. The 71V3559S75BQ8 meets this timing spec across commercial and industrial temperature ranges, confirming its suitability for high-speed synchronous memory interfaces.

Does 71V3559S75BQ8 support both 128K x 36 and 256K x 18 configurations?

Yes, the 71V3559S75BQ8 supports both configurations. The memory array is physically 4.5 Mbit and can be configured as either 128K × 36 or 256K × 18 depending on address pin usage and mode selection. Pin A17 is used in 256K × 18 mode but is NC in 128K × 36 mode, as confirmed in the 100 TQFP pin configuration diagrams for both variants.

How is burst order selected on 71V3559S75BQ8?

Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear burst (0,1,2,3), while LBO = HIGH selects interleaved burst (0,2,1,3). LBO is a static input and must remain stable during burst operation. This selection directly determines the address sequence generated by the internal burst counter when ADV/LD = HIGH.

Is JTAG boundary scan mandatory for 71V3559S75BQ8 operation?

No, JTAG boundary scan is optional and does not affect normal memory operation. The TMS, TDI, TCK, TDO, and TRST pins are dedicated to test functionality and may be left unconnected or tied to appropriate voltage levels (e.g., TMS/TDI/TCK pulled up) when not used. The 71V3559S75BQ8 functions identically with or without JTAG activation.

What is the role of the ZZ pin on 71V3559S75BQ8?

The ZZ pin enables synchronous sleep mode: when driven HIGH, it gates the internal CLK and reduces power consumption to the lowest level while retaining memory contents. Data retention is guaranteed across the full industrial temperature range. ZZ is sampled synchronously on the rising edge of CLK and requires no additional timing constraints beyond standard setup/hold requirements.

71V3559S75BQ8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V3559S75BQ8 FAQ

1.How can I place an order for 71V3559S75BQ8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3559S75BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3559S75BQ8 reliable?

The price and inventory of 71V3559S75BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S75BQ8 is usually 5 days.

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4.How is shipping managed for 71V3559S75BQ8?

71V3559S75BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3559S75BQ8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3559S75BQ8?

For technical support, including 71V3559S75BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S75BQ8 requirements.

6.How does Aetrix verify that 71V3559S75BQ8 is sourced from the original manufacturer or authorized distributors?

All 71V3559S75BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S75BQ8 meets industry standards.

7.What is the process for return or replacement of 71V3559S75BQ8?

All 71V3559S75BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S75BQ8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3559S75BQ8 part is unused and in its original packaging.

Return procedure for 71V3559S75BQ8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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