Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V3559S75PFG

Part No.:
71V3559S75PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3559S75PFG.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,289

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V3559S75PFG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in networking and telecom data paths. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1).

For engineers reviewing the 71V3559S75PFG datasheet, 71V3559S75PFG pinout, 71V3559S75PFG application, or 71V3559S75PFG equivalent, this device is selected for low-latency, burst-capable SRAM subsystems requiring deterministic timing, synchronous control, and seamless read/write transitions in packet buffering, cache coherency, and FPGA-attached memory interfaces.

Technical Context

The 71V3559S75PFG implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequence - critical for predictable burst addressing in pipeline-aligned systems.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) enabling depth expansion without external logic, plus CEN for full clock suspension and ZZ for low-power sleep mode with guaranteed data retention. All I/Os are 3.3V-compatible with VDDQ separate from core VDD, supporting mixed-voltage system integration.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36 bits (4.5 Mbit); supports 256K × 18 via pin-compatible variant
Clock Frequency 100 MHz - enables 10 ns cycle time for high-throughput data buffering
Access Time 7.5 ns clock-to-data - guarantees deterministic read latency for real-time pipelines
Burst Capability 4-word burst (linear or interleaved) - reduces address bus traffic and improves bandwidth efficiency
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - ensures signal integrity in 3.3V logic domains
Operating Temperature –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments
JTAG Support IEEE 1149.1 compliant boundary scan - enables in-system testability and debug without physical probe access

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pinout matches IDT71V3559S family; pin 64 supports ZZ (sleep mode) on latest die revisions.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs Synchronous address latch triggered on rising CLK with ADV/LD low; defines 128K-word space
CE1, CE2, CE2 Chip Enables Three independent enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and hierarchical selection
R/W Read/Write Control Synchronous signal determining cycle type; data transfer occurs one clock cycle later
ADV/LD Advance Burst / Load Address LOW loads new external address; HIGH increments internal burst counter - enables seamless burst sequencing
LBO Linear/Interleaved Burst Order Static input selecting burst pattern; must remain stable during operation to avoid address misalignment
BW1–BW4 Byte Write Enables Active-low per-9-bit-byte controls; allows partial writes without masking logic or bus contention
CLK System Clock Input All synchronous timing referenced to rising edge; OE is sole asynchronous signal
I/O0–I/O31, I/OP1–I/OP4 Data I/O 36-bit bidirectional flow-through interface; no output register - eliminates output skew and simplifies timing closure
ZZ Sleep Mode Input Active-high synchronous entry into lowest-power state; retains memory contents with gated internal clock
TMS, TDI, TCK, TDO, TRST JTAG Test Interface Fully compliant IEEE 1149.1 chain; TRST optional - supports production test and field diagnostics

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between read/write transitions - enables continuous data streaming in full-duplex memory controllers
Flow-Through Outputs No output register required - reduces output latency by one clock cycle and removes hold-time dependency on OE
Internally Synchronized OE OE is asynchronous but internally synchronized - prevents metastability while allowing flexible timing margining
Individual Byte Write Control Four independent BW signals enable precise 9-bit granularity writes - avoids full-word overwrite and reduces power per write
Three Chip Enables Supports up to 8× depth expansion using only native pins - eliminates need for external decode logic in multi-SRAM systems
Separate VDDQ Supply Isolates I/O power from core logic - suppresses switching noise coupling and improves signal integrity on high-speed buses

Applications

Packet Buffering in Switch ASICs Cache Coherency Directory Memory

Use Scenario: High-speed Ethernet switch ASICs require low-latency, burst-capable memory to store ingress/egress packet headers and metadata during classification and forwarding.

IC Role / Device Role / Timing Role: 71V3559S75PFG serves as a synchronous, zero-turnaround SRAM buffer - accepting burst reads/writes from parallel datapaths with deterministic 7.5 ns access.

Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles and supporting 4-word bursts aligned to header structures.

Use Scenario: Multi-core processors use directory-based cache coherency protocols requiring fast, deterministic access to shared tag/state tables across multiple agents.

IC Role / Device Role / Timing Role: 71V3559S75PFG provides 128K × 36-bit tag storage with synchronous, flow-through outputs - delivering consistent read latency for snoop response timing.

Use Value: Guarantees sub-10 ns read access and supports concurrent byte-write updates to individual cache line states without full-word rewrite overhead.

FPGA-Attached Frame Buffer Telecom Line Card Control Memory

Use Scenario: High-end FPGAs implement video processing pipelines needing external frame buffers with burst-aligned pixel data access and minimal latency jitter.

IC Role / Device Role / Timing Role: 71V3559S75PFG acts as a synchronous, 36-bit wide frame buffer - interfacing directly to FPGA I/O banks with matched 3.3V signaling and separate VDDQ.

Use Value: Supports 100 MHz pixel clock rates and 4-word linear bursts matching 128-bit AXI data widths - reducing controller logic complexity.

Use Scenario: Telecom line cards (e.g., SONET/SDH OC-192) require reliable, industrial-grade memory for protocol stack state tables, alarm logs, and configuration registers.

IC Role / Device Role / Timing Role: 71V3559S75PFG functions as a robust, JTAG-testable control memory - operating continuously across –40°C to +85°C with sleep-mode power gating.

Use Value: Delivers guaranteed data retention in ZZ sleep mode and IEEE 1149.1 test coverage - meeting carrier-grade reliability and field-service requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1355BV18-100BZI 256K × 18 organization, 100 MHz, same TQFP-100 package; lacks JTAG and ZZ sleep mode Optimized for width-matched 18-bit bus systems; not suitable for 36-bit burst-aligned designs requiring byte write granularity Select when system bus width is 18-bit and JTAG/testability is non-critical
AS7C31025B-10JIN 128K × 32 organization, 10 ns access, 3.3V; no burst counter, no ADV/LD or LBO control Standard async/sync SRAM interface - requires external burst logic and cannot achieve ZBT™ zero-turnaround behavior Select only for legacy designs lacking burst or turnaround optimization requirements

Compared with CY7C1355BV18-100BZI and AS7C31025B-10JIN, the 71V3559S75PFG uniquely delivers 36-bit width, integrated 4-word burst sequencing, ZBT™ turnaround elimination, and industrial-grade JTAG + sleep support - making it irreplaceable in high-performance, deterministic memory subsystems.

Availability

71V3559S75PFG is available at Aetrix Electronics and suitable for packet buffering, cache coherency directories, FPGA frame buffers, and telecom line card control memory requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for 71V3559S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The IDT71V3559S product line was designed specifically for high-speed, low-latency synchronous memory applications in networking infrastructure - emphasizing zero bus turnaround, burst efficiency, and industrial reliability.

FAQ

What is the memory organization and total capacity of the 71V3559S75PFG?

The 71V3559S75PFG is organized as 128K words × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit parallel data paths and is pin-compatible with the 256K × 18 variant (IDT71V3557S) via shared package footprint and control logic.

Does the 71V3559S75PFG support burst read and write operations, and how is burst order controlled?

Yes, the 71V3559S75PFG supports 4-word synchronous bursts for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear sequence (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on ADV/LD = HIGH.

How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V3559S75PFG?

ZBT™ eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal without wait states. In the 71V3559S75PFG, this is achieved through synchronized control logic and flow-through outputs - enabling back-to-back accesses at full 100 MHz clock rate with no turnaround penalty.

What are the power supply requirements and voltage tolerances for the 71V3559S75PFG?

The 71V3559S75PFG requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O interface, 3.3 V ±5%). Ground is common (VSS). Input voltage limits are VIH ≥ 2.0 V, VIL ≤ 0.8 V, and absolute max ratings specify –0.5 V to +4.6 V on all terminals.

Is JTAG boundary scan supported on the 71V3559S75PFG, and what pins are used?

Yes, the 71V3559S75PFG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (active-low reset) are dedicated to the JTAG interface and appear on the 100-pin TQFP package - enabling in-system test, debug, and manufacturing verification.

71V3559S75PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3559S75PFG FAQ

1.How can I place an order for 71V3559S75PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3559S75PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3559S75PFG reliable?

The price and inventory of 71V3559S75PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S75PFG is usually 5 days.

3.What payment methods are accepted for 71V3559S75PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S75PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3559S75PFG?

71V3559S75PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3559S75PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3559S75PFG?

For technical support, including 71V3559S75PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S75PFG requirements.

6.How does Aetrix verify that 71V3559S75PFG is sourced from the original manufacturer or authorized distributors?

All 71V3559S75PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S75PFG meets industry standards.

7.What is the process for return or replacement of 71V3559S75PFG?

All 71V3559S75PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S75PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3559S75PFG part is unused and in its original packaging.

Return procedure for 71V3559S75PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V3559S75PFG Tags

  • 71V3559S75PFG
  • 71V3559S75PFG PDF
  • 71V3559S75PFG Datasheet
  • 71V3559S75PFG Specifications
  • 71V3559S75PFG Images
  • Renesas
  • Renesas 71V3559S75PFG
  • Buy 71V3559S75PFG
  • 71V3559S75PFG Price
  • 71V3559S75PFG Distributor
  • 71V3559S75PFG Supplier
  • 71V3559S75PFG Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER