Renesas 71V3559S75PFG
- Part No.:
- 71V3559S75PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3559S75PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:3,289
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3559S75PFG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in networking and telecom data paths. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1).
For engineers reviewing the 71V3559S75PFG datasheet, 71V3559S75PFG pinout, 71V3559S75PFG application, or 71V3559S75PFG equivalent, this device is selected for low-latency, burst-capable SRAM subsystems requiring deterministic timing, synchronous control, and seamless read/write transitions in packet buffering, cache coherency, and FPGA-attached memory interfaces.
Technical Context
The 71V3559S75PFG implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequence - critical for predictable burst addressing in pipeline-aligned systems.
It features three chip enables (CE1, CE2 active-low; CE2 active-high) enabling depth expansion without external logic, plus CEN for full clock suspension and ZZ for low-power sleep mode with guaranteed data retention. All I/Os are 3.3V-compatible with VDDQ separate from core VDD, supporting mixed-voltage system integration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 256K × 18 via pin-compatible variant |
| Clock Frequency | 100 MHz - enables 10 ns cycle time for high-throughput data buffering |
| Access Time | 7.5 ns clock-to-data - guarantees deterministic read latency for real-time pipelines |
| Burst Capability | 4-word burst (linear or interleaved) - reduces address bus traffic and improves bandwidth efficiency |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - ensures signal integrity in 3.3V logic domains |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments |
| JTAG Support | IEEE 1149.1 compliant boundary scan - enables in-system testability and debug without physical probe access |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pinout matches IDT71V3559S family; pin 64 supports ZZ (sleep mode) on latest die revisions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered on rising CLK with ADV/LD low; defines 128K-word space |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and hierarchical selection |
| R/W | Read/Write Control | Synchronous signal determining cycle type; data transfer occurs one clock cycle later |
| ADV/LD | Advance Burst / Load Address | LOW loads new external address; HIGH increments internal burst counter - enables seamless burst sequencing |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst pattern; must remain stable during operation to avoid address misalignment |
| BW1–BW4 | Byte Write Enables | Active-low per-9-bit-byte controls; allows partial writes without masking logic or bus contention |
| CLK | System Clock Input | All synchronous timing referenced to rising edge; OE is sole asynchronous signal |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional flow-through interface; no output register - eliminates output skew and simplifies timing closure |
| ZZ | Sleep Mode Input | Active-high synchronous entry into lowest-power state; retains memory contents with gated internal clock |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | Fully compliant IEEE 1149.1 chain; TRST optional - supports production test and field diagnostics |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - enables continuous data streaming in full-duplex memory controllers |
| Flow-Through Outputs | No output register required - reduces output latency by one clock cycle and removes hold-time dependency on OE |
| Internally Synchronized OE | OE is asynchronous but internally synchronized - prevents metastability while allowing flexible timing margining |
| Individual Byte Write Control | Four independent BW signals enable precise 9-bit granularity writes - avoids full-word overwrite and reduces power per write |
| Three Chip Enables | Supports up to 8× depth expansion using only native pins - eliminates need for external decode logic in multi-SRAM systems |
| Separate VDDQ Supply | Isolates I/O power from core logic - suppresses switching noise coupling and improves signal integrity on high-speed buses |
Applications
| Packet Buffering in Switch ASICs | Cache Coherency Directory Memory |
|---|---|
|
Use Scenario: High-speed Ethernet switch ASICs require low-latency, burst-capable memory to store ingress/egress packet headers and metadata during classification and forwarding. IC Role / Device Role / Timing Role: 71V3559S75PFG serves as a synchronous, zero-turnaround SRAM buffer - accepting burst reads/writes from parallel datapaths with deterministic 7.5 ns access. Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles and supporting 4-word bursts aligned to header structures. |
Use Scenario: Multi-core processors use directory-based cache coherency protocols requiring fast, deterministic access to shared tag/state tables across multiple agents. IC Role / Device Role / Timing Role: 71V3559S75PFG provides 128K × 36-bit tag storage with synchronous, flow-through outputs - delivering consistent read latency for snoop response timing. Use Value: Guarantees sub-10 ns read access and supports concurrent byte-write updates to individual cache line states without full-word rewrite overhead. |
| FPGA-Attached Frame Buffer | Telecom Line Card Control Memory |
|
Use Scenario: High-end FPGAs implement video processing pipelines needing external frame buffers with burst-aligned pixel data access and minimal latency jitter. IC Role / Device Role / Timing Role: 71V3559S75PFG acts as a synchronous, 36-bit wide frame buffer - interfacing directly to FPGA I/O banks with matched 3.3V signaling and separate VDDQ. Use Value: Supports 100 MHz pixel clock rates and 4-word linear bursts matching 128-bit AXI data widths - reducing controller logic complexity. |
Use Scenario: Telecom line cards (e.g., SONET/SDH OC-192) require reliable, industrial-grade memory for protocol stack state tables, alarm logs, and configuration registers. IC Role / Device Role / Timing Role: 71V3559S75PFG functions as a robust, JTAG-testable control memory - operating continuously across –40°C to +85°C with sleep-mode power gating. Use Value: Delivers guaranteed data retention in ZZ sleep mode and IEEE 1149.1 test coverage - meeting carrier-grade reliability and field-service requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-100BZI | 256K × 18 organization, 100 MHz, same TQFP-100 package; lacks JTAG and ZZ sleep mode | Optimized for width-matched 18-bit bus systems; not suitable for 36-bit burst-aligned designs requiring byte write granularity | Select when system bus width is 18-bit and JTAG/testability is non-critical |
| AS7C31025B-10JIN | 128K × 32 organization, 10 ns access, 3.3V; no burst counter, no ADV/LD or LBO control | Standard async/sync SRAM interface - requires external burst logic and cannot achieve ZBT™ zero-turnaround behavior | Select only for legacy designs lacking burst or turnaround optimization requirements |
Compared with CY7C1355BV18-100BZI and AS7C31025B-10JIN, the 71V3559S75PFG uniquely delivers 36-bit width, integrated 4-word burst sequencing, ZBT™ turnaround elimination, and industrial-grade JTAG + sleep support - making it irreplaceable in high-performance, deterministic memory subsystems.
Availability
71V3559S75PFG is available at Aetrix Electronics and suitable for packet buffering, cache coherency directories, FPGA frame buffers, and telecom line card control memory requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for 71V3559S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.
The IDT71V3559S product line was designed specifically for high-speed, low-latency synchronous memory applications in networking infrastructure - emphasizing zero bus turnaround, burst efficiency, and industrial reliability.
FAQ
What is the memory organization and total capacity of the 71V3559S75PFG?
The 71V3559S75PFG is organized as 128K words × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit parallel data paths and is pin-compatible with the 256K × 18 variant (IDT71V3557S) via shared package footprint and control logic.
Does the 71V3559S75PFG support burst read and write operations, and how is burst order controlled?
Yes, the 71V3559S75PFG supports 4-word synchronous bursts for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear sequence (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on ADV/LD = HIGH.
How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V3559S75PFG?
ZBT™ eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal without wait states. In the 71V3559S75PFG, this is achieved through synchronized control logic and flow-through outputs - enabling back-to-back accesses at full 100 MHz clock rate with no turnaround penalty.
What are the power supply requirements and voltage tolerances for the 71V3559S75PFG?
The 71V3559S75PFG requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O interface, 3.3 V ±5%). Ground is common (VSS). Input voltage limits are VIH ≥ 2.0 V, VIL ≤ 0.8 V, and absolute max ratings specify –0.5 V to +4.6 V on all terminals.
Is JTAG boundary scan supported on the 71V3559S75PFG, and what pins are used?
Yes, the 71V3559S75PFG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (active-low reset) are dedicated to the JTAG interface and appear on the 100-pin TQFP package - enabling in-system test, debug, and manufacturing verification.
71V3559S75PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3559S75PFG FAQ
1.How can I place an order for 71V3559S75PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3559S75PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3559S75PFG reliable?
The price and inventory of 71V3559S75PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S75PFG is usually 5 days.
3.What payment methods are accepted for 71V3559S75PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S75PFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3559S75PFG?
71V3559S75PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3559S75PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3559S75PFG?
For technical support, including 71V3559S75PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S75PFG requirements.
6.How does Aetrix verify that 71V3559S75PFG is sourced from the original manufacturer or authorized distributors?
All 71V3559S75PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S75PFG meets industry standards.
7.What is the process for return or replacement of 71V3559S75PFG?
All 71V3559S75PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S75PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3559S75PFG part is unused and in its original packaging.
Return procedure for 71V3559S75PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3559S75PFG Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

