Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3559S75PFG8

Name: 71V3559S75PFG8
Brand: Renesas
SKU: 71V3559S75PFG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 71V3559S75PFG8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3559S75PFG8.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,215

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

71V3559S75PFG8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 256K x 18 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in networking and telecom data paths. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control via BW1–BW4, and includes JTAG boundary scan (IEEE 1149.1 compliant).

For engineers reviewing the 71V3559S75PFG8 datasheet, 71V3559S75PFG8 pinout, 71V3559S75PFG8 application, or 71V3559S75PFG8 equivalent, key selection criteria include burst mode timing compatibility, ZBT™ dead-cycle elimination, TQFP-100 package footprint, 3.3V core/I/O supply tolerance, and synchronous chip enable logic for depth expansion in packet buffer systems.

Technical Context

The 71V3559S75PFG8 implements a synchronous dual-edge-triggered architecture where address/control latching occurs on the rising CLK edge, with data output appearing one cycle later via flow-through path-no output register. Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing order.

Three chip enables (CE1, CE2 active-low; CE2 active-high) support hierarchical memory banking; CEN suspends all synchronous operation without affecting output state; ZZ enables low-power sleep mode with guaranteed data retention. JTAG interface (TMS/TDI/TCK/TDO/TRST) provides IEEE 1149.1-compliant test access.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K x 18 (4.5 Mbit) - supports 18-bit data bus width with full word addressing for compact memory mapping in DSP and switch fabric designs.
Clock Frequency	100 MHz - enables 10 ns cycle time for high-throughput packet buffering in 10G Ethernet and SONET line cards.
Access Time	7.5 ns clock-to-data - defines minimum latency between CLK rise and valid I/O output, critical for meeting setup/hold timing in synchronous bus interfaces.
Burst Length	4-word fixed burst - reduces address overhead per transfer; linear/interleaved sequence selectable via static LBO pin for cache-line or DMA alignment.
Supply Voltage	VDD = VDDQ = 3.3 V ±5% - requires single regulated 3.3V rail for core and I/O, simplifying power delivery in multi-SRAM systems.
Operating Temperature	–40°C to +85°C - qualified for industrial-grade deployment in base station equipment and ruggedized network infrastructure.
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with automated assembly; pinout matches IDT's ZBT™ family for layout reuse.

Pinout & Package

71V3559S75PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free (Pb-free) and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Input	Synchronous 18-bit address bus; latched on rising CLK when ADV/LD = LOW and chip enabled - defines 256K-word address space.
CE1, CE2, CE2	Chip Enable	Three independent enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and bank selection without external logic.
R/W	Read/Write Control	Synchronous signal determining cycle type; sampled with ADV/LD to initiate load read/write or burst advance - eliminates separate RD/WR pins.
ADV/LD	Advance Burst / Load Address	Controls burst counter: LOW loads new external address; HIGH increments internal counter - enables continuous burst streaming without address bus updates.
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence (LBO = LOW → linear; HIGH → interleaved) - matches CPU cache or DMA controller addressing patterns.
BW1–BW4	Byte Write Enables	Four active-low signals enabling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); allows partial-word updates without read-modify-write cycles.
CLK	System Clock Input	Primary timing reference; all synchronous inputs referenced to rising edge - defines deterministic timing for pipelined memory access.
OE	Output Enable	Asynchronous, active-low; tri-states I/Os independently of clock - supports shared bus arbitration and hot-swap isolation.
ZZ	Sleep Mode Input	Active-high synchronous input gating internal clock and reducing power consumption while retaining memory contents - used for dynamic power management.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus (16 data + 2 parity) with registered input path and flow-through output - enables zero-latency read forwarding in pipeline stages.
TMS, TDI, TCK, TDO, TRST	JTAG Test Interface	IEEE 1149.1-compliant boundary scan chain; supports production testing, interconnect verification, and in-system debug without dedicated test pads.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between consecutive reads/writes - enables back-to-back memory transactions at full clock rate for sustained 200 MB/s throughput.
Flow-Through Output Architecture	Removes output register delay - data appears on I/O bus one clock after address/control setup, reducing read latency by one cycle vs. registered-output SRAMs.
4-Word Synchronous Burst	Single address initiates four sequential data transfers - cuts address bus activity by 75%, easing timing closure in high-speed parallel buses.
Individual Byte Write Control	BW1–BW4 enable selective 9-bit writes - avoids full-word overwrites in protocol header manipulation or table update applications.
Three Independent Chip Enables	Supports up to 8:1 depth expansion using only CE logic - simplifies design of large memory banks without address decoder ICs.
JTAG Boundary Scan (IEEE 1149.1)	Enables PCB-level interconnect test and in-system programming - reduces test fixture cost and improves manufacturing yield for dense routing layouts.

Applications

Packet Buffering in Switch Fabric	Line Card Memory for Telecom Equipment
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with burst-aligned read/write for cut-through forwarding. Use Value: ZBT™ architecture enables immediate turnaround between header read and payload write, minimizing pipeline stalls and sustaining 10 Gbps line-rate performance.	Use Scenario: Buffering ATM cells or SONET frames in carrier-grade optical line cards operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-temperature synchronous SRAM providing deterministic 7.5 ns access for real-time frame assembly/disassembly. Use Value: Flow-through outputs and 100 MHz clocking meet tight setup/hold margins required by framer ASICs, eliminating need for external latch tuning.
DSP Co-Processor Memory	Protocol Accelerator Cache
Use Scenario: Serving as local instruction/data memory for TI C6000 or Analog Devices SHARC DSPs in radar signal processing modules. IC Role / Device Role / Timing Role: 256K x 18 configuration matches DSP external memory bus width; burst mode aligns with cache-line fetches. Use Value: Linear burst sequence (LBO = LOW) delivers contiguous 4-word blocks matching DSP prefetch engine stride, improving cache hit efficiency.	Use Scenario: Accelerating TCP/IP or IPSec header parsing in network security appliances using dedicated offload engines. IC Role / Device Role / Timing Role: Low-latency SRAM storing lookup tables and session state; byte-write enables atomic field updates without locking. Use Value: Individual BW1–BW4 control allows concurrent modification of TCP flags and sequence numbers in separate 9-bit fields, preventing race conditions.

Packet Buffering in Switch Fabric

Line Card Memory for Telecom Equipment

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with burst-aligned read/write for cut-through forwarding.

Use Value: ZBT™ architecture enables immediate turnaround between header read and payload write, minimizing pipeline stalls and sustaining 10 Gbps line-rate performance.

Use Scenario: Buffering ATM cells or SONET frames in carrier-grade optical line cards operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Industrial-temperature synchronous SRAM providing deterministic 7.5 ns access for real-time frame assembly/disassembly.

Use Value: Flow-through outputs and 100 MHz clocking meet tight setup/hold margins required by framer ASICs, eliminating need for external latch tuning.

DSP Co-Processor Memory

Protocol Accelerator Cache

Use Scenario: Serving as local instruction/data memory for TI C6000 or Analog Devices SHARC DSPs in radar signal processing modules.

IC Role / Device Role / Timing Role: 256K x 18 configuration matches DSP external memory bus width; burst mode aligns with cache-line fetches.

Use Value: Linear burst sequence (LBO = LOW) delivers contiguous 4-word blocks matching DSP prefetch engine stride, improving cache hit efficiency.

Use Scenario: Accelerating TCP/IP or IPSec header parsing in network security appliances using dedicated offload engines.

IC Role / Device Role / Timing Role: Low-latency SRAM storing lookup tables and session state; byte-write enables atomic field updates without locking.

Use Value: Individual BW1–BW4 control allows concurrent modification of TCP flags and sequence numbers in separate 9-bit fields, preventing race conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1355KV18-75BAXI	72-Mbit (512K × 144) QDR SRAM; 75 MHz max, differential clocks, no ZBT™ or flow-through outputs.	Targeted at high-bandwidth, dual-port applications (e.g., graphics frame buffers); lacks burst counter and zero-turnaround behavior.	Select when dual-clock domain synchronization or higher density is required; not drop-in for ZBT™-optimized control logic.
AS7C33128PFS-75BIN	128K × 36 sync SRAM; 75 MHz, 3.3V, but no JTAG, no ZZ sleep, and no interleaved burst mode.	Cost-optimized for simpler embedded controllers; missing advanced features needed for telecom switching latency budgets.	Consider for non-critical buffering where JTAG testability and power-aware sleep are unnecessary.

Compared with CY7C1355KV18-75BAXI and AS7C33128PFS-75BIN, the 71V3559S75PFG8 uniquely combines ZBT™ zero-turnaround, flow-through outputs, and IEEE 1149.1 JTAG in a 100-pin TQFP - making it optimal for latency-sensitive, testable, and thermally demanding telecom line card designs.

Availability

71V3559S75PFG8 is available at Aetrix Electronics and suitable for packet buffering in switch fabrics, line card memory for telecom equipment, and DSP co-processor memory requiring stable component supply, long-term industrial temperature support, and verified ZBT™ timing compliance.

Supply support for 71V3559S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 71V3559S75PFG8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency memory interfacing in high-speed networking and telecom infrastructure where bus turnaround overhead must be eliminated.

FAQ

What memory organization does the 71V3559S75PFG8 implement?

The 71V3559S75PFG8 implements a 256K x 18 memory organization, totaling 4.5 Mbit of storage. This configuration provides an 18-bit data bus width optimized for compatibility with telecom framer ASICs and DSP external memory interfaces. It is distinct from the 128K x 36 variant (e.g., 71V3557S75PFG8) and cannot be substituted without redesigning data path width and address decoding logic.

Does the 71V3559S75PFG8 support both linear and interleaved burst modes?

Yes, the 71V3559S75PFG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved (A0, A2, A1, A3). This selection is static and must remain stable during operation to prevent burst corruption.

How does the ZBT™ feature of the 71V3559S75PFG8 reduce system latency?

The ZBT™ (Zero Bus Turnaround) feature in the 71V3559S75PFG8 eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring OE deassertion and bus turnaround time, the 71V3559S75PFG8 allows immediate transition from read to write (or vice versa) within the same clock domain - enabling sustained 100 MHz throughput without dead cycles.

What is the function of the ZZ pin on the 71V3559S75PFG8?

The ZZ pin on the 71V3559S75PFG8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to its lowest level while guaranteeing data retention. This feature is essential for power-aware telecom systems that dynamically scale memory activity based on traffic load - and is confirmed functional in the 71V3559S75PFG8's TQFP package per datasheet revision DSC-5282/09.

Is JTAG boundary scan supported on the 71V3559S75PFG8, and which pins are used?

Yes, the 71V3559S75PFG8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional reset) are dedicated to this function. In the 100-pin TQFP package, these appear on pins 87 (TMS), 88 (TDI), 89 (TCK), 90 (TDO), and 64 (TRST/ZZ multiplexed in later die revisions). JTAG is fully functional and production-tested per IDT specification DSC-5282/09.

71V3559S75PFG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V3559S75PFG8 FAQ

1.How can I place an order for 71V3559S75PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3559S75PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3559S75PFG8 reliable?

The price and inventory of 71V3559S75PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S75PFG8 is usually 5 days.

3.What payment methods are accepted for 71V3559S75PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S75PFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3559S75PFG8?

71V3559S75PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3559S75PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3559S75PFG8?

For technical support, including 71V3559S75PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S75PFG8 requirements.

6.How does Aetrix verify that 71V3559S75PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V3559S75PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S75PFG8 meets industry standards.

7.What is the process for return or replacement of 71V3559S75PFG8?

All 71V3559S75PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S75PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3559S75PFG8 part is unused and in its original packaging.

Return procedure for 71V3559S75PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…