Renesas 71V3559S80BG

Overview

71V3559S80BG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in networking and telecom data paths. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1).

For engineers reviewing the 71V3559S80BG datasheet, 71V3559S80BG pinout, 71V3559S80BG application, or 71V3559S80BG equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V core/I/O supply requirements, burst sequence control via LBO, and support for depth expansion using CE1/CE2/CE2 chip enables.

Technical Context

The 71V3559S80BG implements a synchronous dual-register architecture: address/control inputs are latched on the rising edge of CLK when ADV/LD is low and chip enables are asserted; data output is flow-through (no output register), enabling immediate read response one cycle after address load. Burst addressing is managed by an internal counter advanced on ADV/LD high transitions.

It integrates three chip enables (CE1, CE2 active-low; CE2 active-high) for flexible depth expansion, a synchronous Clock Enable (CEN) to suspend operation without affecting register state, and optional IEEE 1149.1 JTAG test logic with TMS/TDI/TCK/TDO/TRST pins. Sleep mode (ZZ) gates internal clock and reduces power while retaining data.

Key Specifications

Pinout & Package

71V3559S80BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355KV18-100BZI and AS7C33128PFSIG, the 71V3559S80BG uniquely delivers ZBT™ timing, configurable burst ordering, IEEE 1149.1 testability, and industrial-grade sleep mode - making it the only option meeting full telecom infrastructure SRAM requirements.

Availability

71V3559S80BG is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interface, telecom line card memory, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.

Supply support for 71V3559S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 71V3559S80BG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in high-end networking and telecom equipment where deterministic burst access and bus turnaround elimination are mandatory.

FAQ

What is the memory organization and total capacity of the 71V3559S80BG?

The 71V3559S80BG is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths common in network processors and DSP interfaces. The device shares pinout and timing with the 256K × 18 variant (71V3557S80BG), enabling layout reuse across density options.

Does the 71V3559S80BG support burst mode, and how is burst order controlled?

Yes, the 71V3559S80BG supports a fixed 4-word burst mode. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear sequence (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3) per JEDEC standards. The burst counter advances synchronously on ADV/LD = HIGH.

What is the role of the ZZ pin on the 71V3559S80BG, and what power savings does it provide?

The ZZ pin on the 71V3559S80BG is a synchronous sleep mode input. When asserted HIGH, it gates the internal clock and reduces dynamic power consumption to its lowest level while guaranteeing data retention. This feature is essential for power-constrained telecom line cards and industrial controllers requiring low standby current without data loss.

Is JTAG boundary scan supported on the 71V3559S80BG, and which pins are used?

Yes, the 71V3559S80BG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional reset) implement the test access port. TRST may be left floating as the TAP controller resets automatically at power-up; all JTAG pins have internal pull-ups per datasheet specifications.

How does the 71V3559S80BG achieve zero bus turnaround, and what is its practical impact?

The 71V3559S80BG achieves zero bus turnaround (ZBT™) by eliminating dead cycles between read and write operations - the bus remains active with no idle clocks required for direction change. This allows back-to-back read-write sequences at full 100 MHz clock rate, directly improving throughput in packet buffering and protocol processing applications where memory bandwidth is critical.