Renesas 71V3559S80BG8

Overview

71V3559S80BG8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache controllers.

For engineers reviewing the 71V3559S80BG8 datasheet, 71V3559S80BG8 pinout, 71V3559S80BG8 application, or 71V3559S80BG8 equivalent, this device supports 100 MHz operation with 7.5 ns clock-to-data access, individual byte write control (BW1–BW4), JTAG boundary scan (IEEE 1149.1), and low-power sleep mode (ZZ pin) - critical for deterministic latency and power-constrained embedded systems.

Technical Context

The 71V3559S80BG8 implements a synchronous interface with all address/control inputs registered on the rising edge of CLK, except OE (asynchronous) and LBO (static). Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load without dead cycles between read/write transitions.

ZBT™ operation eliminates bus turnaround penalties via dedicated R/W and ADV/LD signals, while flow-through outputs avoid output register delay. The device supports three chip enables (CE1, CE2, CE2) for depth expansion and includes optional JTAG test logic with TMS/TDI/TCK/TDO/TRST pins for system-level debug and boundary scan verification.

Key Specifications

Pinout & Package

71V3559S80BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with exposed pad not electrically connected. Pin 64 supports ZZ (sleep mode) on latest die revisions; pins 83–84 are reserved for future density extensions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-100BZI and AS7C3256B-10JIN, the 71V3559S80BG8 uniquely delivers ZBT™-enabled zero-turnaround operation, flow-through outputs for minimal read latency, and integrated JTAG - making it irreplaceable in high-speed networking and real-time control subsystems demanding deterministic timing and debugability.

Availability

71V3559S80BG8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache controller design, and telecom line card memory applications requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for 71V3559S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 71V3559S80BG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and real-time embedded systems where bus turnaround overhead must be eliminated.

FAQ

What is the memory organization and total capacity of the 71V3559S80BG8?

The 71V3559S80BG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). It supports the same pinout and timing as the 256K × 18 variant (71V3557S80BG8), allowing flexible system design based on data width requirements while maintaining PCB compatibility.

Does the 71V3559S80BG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V3559S80BG8 supports 4-word burst operations for both reads and writes. Burst order is selected via the LBO pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). This selection is static and must remain stable during burst execution.

How does the ZBT™ feature of the 71V3559S80BG8 eliminate bus turnaround cycles?

The 71V3559S80BG8 eliminates bus turnaround cycles through dedicated R/W and ADV/LD signals. When transitioning between read and write operations, the controller asserts ADV/LD = LOW to load a new address and sets R/W accordingly - no bus idle cycles are inserted, enabling continuous data flow at 100 MHz without performance penalty.

What is the function of the ZZ pin on the 71V3559S80BG8, and what power savings does it provide?

The ZZ pin on the 71V3559S80BG8 enables synchronous sleep mode when driven HIGH. It internally gates the clock and reduces dynamic power consumption to minimum levels while guaranteeing data retention. Power savings exceed 70% in deep-sleep states compared to active operation, critical for thermally constrained telecom and industrial applications.

Is JTAG boundary scan supported on the 71V3559S80BG8, and which pins are used?

Yes, the 71V3559S80BG8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (with internal pull-up) implement the test access port. JTAG functionality is fully supported in the "S" version per datasheet revision DSC-5282/09, enabling production test and field debug without additional hardware.