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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3559S80BQG

Name: 71V3559S80BQG
Brand: Renesas
SKU: 71V3559S80BQG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3559S80BQG

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V3559S80BQG.pdf

Description:: IC SRAM 4.5MBIT PAR 165CABGA

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Product details

Overview

71V3559S80BQG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in network packet buffers and cache subsystems. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1).

For engineers reviewing the 71V3559S80BQG datasheet, 71V3559S80BQG pinout, 71V3559S80BQG application, or 71V3559S80BQG equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V core/I/O supply requirements, burst mode configuration via LBO, and support for depth expansion using three chip enables (CE1, CE2, CE2).

Technical Context

The 71V3559S80BQG implements a synchronous interface where all address and control signals-including ADV/LD, R/W, CEN, and BWx-are sampled on the rising edge of CLK. Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load without dead cycles between reads and writes.

It features flow-through output architecture (no output register), asynchronous OE for tri-state control, and optional JTAG test logic with TMS/TDI/TCK/TDO/TRST pins. Sleep mode (ZZ) gates the internal clock to reduce power while retaining data, and the device supports both commercial (0°C to +70°C) and industrial (−40°C to +85°C) temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 (4.5 Mbit); supports 256K × 18 via pin-compatible variant
Clock Frequency	100 MHz - enables 10 ns cycle time for high-bandwidth data buffering
Access Time	7.5 ns clock-to-data - defines minimum latency from CLK rise to valid output
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation
Burst Mode	4-word linear or interleaved burst - selected by static LBO pin; eliminates external address sequencing logic
Byte Write Control	BW1–BW4 active-low enables - allows independent 9-bit byte writes without masking logic
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with standard reflow profiles

Pinout & Package

71V3559S80BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 is located at top-left corner (marked by dot or bevel), and pin numbering proceeds counterclockwise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous inputs latched on rising CLK edge when ADV/LD = LOW and chip enabled
CE1, CE2, CE2	Chip Enables	Three enables (CE1/CE2 active low, CE2 active high) allow flexible depth expansion and deselect within one clock cycle
R/W	Read/Write Control	Synchronous signal determining cycle type; data transfer occurs one clock later
ADV/LD	Advance Burst / Load Address	LOW loads new external address; HIGH increments internal burst counter
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence; must remain stable during operation
BW1–BW4	Byte Write Enables	Active-low controls for 9-bit data bytes; all may be tied LOW for full-word writes
CLK	System Clock Input	All synchronous timing referenced to rising edge; OE is the only asynchronous signal
OE	Output Enable	Asynchronous; drives I/O pins to high-impedance when HIGH - can be tied LOW for read-only use
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; input path registered, output path flow-through (no output register)
ZZ	Sleep Mode	Active-high synchronous input that gates internal clock and reduces power while retaining memory contents
TMS, TDI, TCK, TDO, TRST	JTAG Test Interface	IEEE 1149.1-compliant boundary scan; TRST is optional asynchronous reset

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between read/write transitions - critical for high-throughput packet buffering in switches/routers
Flow-Through Outputs	No output register required - reduces output latency and simplifies timing closure in high-speed designs
4-Word Burst Capability	Single address initiates four sequential data transfers - cuts address bus activity by 75% during burst accesses
Individual Byte Write Control	Four independent 9-bit write enables - enables precise partial-word updates without read-modify-write overhead
Three Chip Enables	Supports seamless depth expansion across multiple devices - simplifies memory subsystem scaling without glue logic
Optional JTAG Boundary Scan	Enables IEEE 1149.1-compliant board-level test and interconnect verification - improves manufacturing yield and debug efficiency

Applications

Network Packet Buffering	Cache Memory Subsystem
Use Scenario: Storing ingress/egress Ethernet or ATM packets in Layer 2/3 switches and routers before forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with ZBT™ timing to sustain line-rate traffic without backpressure. Use Value: 100 MHz operation and 4-word burst reduce memory controller overhead and improve throughput by eliminating bus turnaround gaps.	Use Scenario: Serving as Level 2 (L2) cache for embedded processors or DSPs in telecom baseband processing units. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access timing and burst prefetch capability for instruction/data caching. Use Value: Flow-through outputs and 7.5 ns clock-to-data enable tight timing margins in cache tag/data paths without added pipeline stages.
Industrial PLC Data Logging	Test Equipment Pattern Memory
Use Scenario: Capturing real-time sensor data streams in programmable logic controllers operating across −40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade memory buffer supporting reliable data capture under extended temperature conditions. Use Value: Guaranteed data retention in ZZ sleep mode and robust 3.3V supply tolerance ensure continuous logging during intermittent power events.	Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for semiconductor device validation. IC Role / Device Role / Timing Role: High-reliability, high-speed pattern memory synchronized to tester clock domains. Use Value: JTAG boundary scan enables in-system verification of memory interconnect integrity - reducing test setup time and false-fail rates.

Network Packet Buffering

Cache Memory Subsystem

Use Scenario: Storing ingress/egress Ethernet or ATM packets in Layer 2/3 switches and routers before forwarding decisions.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer with ZBT™ timing to sustain line-rate traffic without backpressure.

Use Value: 100 MHz operation and 4-word burst reduce memory controller overhead and improve throughput by eliminating bus turnaround gaps.

Use Scenario: Serving as Level 2 (L2) cache for embedded processors or DSPs in telecom baseband processing units.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access timing and burst prefetch capability for instruction/data caching.

Use Value: Flow-through outputs and 7.5 ns clock-to-data enable tight timing margins in cache tag/data paths without added pipeline stages.

Industrial PLC Data Logging

Test Equipment Pattern Memory

Use Scenario: Capturing real-time sensor data streams in programmable logic controllers operating across −40°C to +85°C.

IC Role / Device Role / Timing Role: Industrial-grade memory buffer supporting reliable data capture under extended temperature conditions.

Use Value: Guaranteed data retention in ZZ sleep mode and robust 3.3V supply tolerance ensure continuous logging during intermittent power events.

Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for semiconductor device validation.

IC Role / Device Role / Timing Role: High-reliability, high-speed pattern memory synchronized to tester clock domains.

Use Value: JTAG boundary scan enables in-system verification of memory interconnect integrity - reducing test setup time and false-fail rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1355KV18-100BZI	128K × 36 QDR SRAM; 100 MHz; differential clock inputs; no ZZ or JTAG	Designed for QDR protocol with separate read/write ports - not drop-in compatible with ZBT™ timing or control signals	Select only if migrating to QDR architecture with dedicated read/write data buses and higher bandwidth requirements
AS7C3256A-10JIN	32K × 8 async SRAM; 10 ns access; no burst, no clock, no JTAG; 32-pin SOIC	Asynchronous interface and smaller density - lacks ZBT™, burst, and synchronous control needed for high-speed buffering	Use only in legacy or cost-sensitive designs where synchronous timing and burst capability are unnecessary

Compared with CY7C1355KV18-100BZI and AS7C3256A-10JIN, the 71V3559S80BQG uniquely delivers ZBT™-optimized zero-turnaround timing, integrated burst counter, and industrial temperature support in a single 100-pin TQFP package - making it optimal for packet buffering and cache applications requiring deterministic latency and minimal bus protocol overhead.

Availability

71V3559S80BQG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and test equipment applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature range operation.

Supply support for 71V3559S80BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs before its acquisition by Renesas Electronics in 2019.

The 71V3559S80BQG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-performance networking and communications systems where deterministic latency, burst efficiency, and bus turnaround elimination are critical design requirements.

FAQ

What is the memory organization and total capacity of the 71V3559S80BQG?

The 71V3559S80BQG is organized as 128K × 36, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths ideal for high-throughput applications such as packet buffering and cache subsystems. The device also has a pin-compatible 256K × 18 variant (71V3557S80BQG) for alternative bus-width implementations.

Does the 71V3559S80BQG support burst mode, and how is it configured?

Yes, the 71V3559S80BQG supports 4-word burst mode with selectable linear or interleaved sequences. Configuration is controlled by the static LBO (Linear Burst Order) pin: LBO = LOW selects linear order, and LBO = HIGH selects interleaved order. Burst initiation occurs when ADV/LD = HIGH after an initial address load, and the internal counter automatically advances without external address updates.

What is the role of the ZZ (Sleep Mode) pin on the 71V3559S80BQG?

The ZZ pin on the 71V3559S80BQG is a synchronous active-high input that gates the internal clock and places the device into low-power sleep mode while guaranteeing data retention. When asserted, it reduces dynamic power consumption significantly without requiring external memory refresh or data backup - making it suitable for power-aware systems like portable test equipment or energy-efficient network edge devices.

Can the 71V3559S80BQG be used with a 2.5V or 1.8V I/O supply?

No, the 71V3559S80BQG requires a 3.3V ±5% I/O supply (VDDQ) and a separate 3.3V ±5% core supply (VDD). It is not compatible with 2.5V or 1.8V I/O standards. Using lower voltages violates absolute maximum ratings and will result in unreliable operation or permanent damage. External level-shifting circuitry is required for interfacing with lower-voltage logic families.

Is JTAG boundary scan functionality mandatory or optional on the 71V3559S80BQG?

JTAG boundary scan is optional on the 71V3559S80BQG and implemented per IEEE 1149.1. Pins TMS, TDI, TCK, TDO, and optional TRST are provided, but TRST may be left floating (internally pulled up) if not used. JTAG functionality does not affect normal memory operation and can be omitted entirely in cost-sensitive or space-constrained designs where board-level test is handled externally.

71V3559S80BQG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V3559S80BQG FAQ

1.How can I place an order for 71V3559S80BQG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3559S80BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3559S80BQG reliable?

The price and inventory of 71V3559S80BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S80BQG is usually 5 days.

3.What payment methods are accepted for 71V3559S80BQG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S80BQG transactions.

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4.How is shipping managed for 71V3559S80BQG?

71V3559S80BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3559S80BQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3559S80BQG?

For technical support, including 71V3559S80BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S80BQG requirements.

6.How does Aetrix verify that 71V3559S80BQG is sourced from the original manufacturer or authorized distributors?

All 71V3559S80BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S80BQG meets industry standards.

7.What is the process for return or replacement of 71V3559S80BQG?

All 71V3559S80BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S80BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3559S80BQG part is unused and in its original packaging.

Return procedure for 71V3559S80BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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