Renesas 71V3559S80BQI

Overview

71V3559S80BQI from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 256K x 18 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for seamless read/write transitions. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and packet buffering applications.

For engineers reviewing the 71V3559S80BQI datasheet, 71V3559S80BQI pinout, 71V3559S80BQI application, or 71V3559S80BQI equivalent, key selection criteria include burst mode timing compliance, synchronous CE1/CE2/CE2 enable logic, ZZ sleep mode power management, LBO-configurable burst order, and TQFP-100 package compatibility with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V3559S80BQI implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with burst sequence direction determined statically by LBO level - enabling deterministic memory access patterns critical for cache coherency and DMA engines.

Three chip enables (CE1, CE2 active-low; CE2 active-high) provide flexible depth expansion and hierarchical deselect control, while CEN suspends all synchronous operation without affecting output state. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with OE remaining asynchronous but typically tied low due to internally synchronized output buffer enable.

Key Specifications

Pinout & Package

71V3559S80BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm lead pitch. Pin 64 supports ZZ (sleep mode) on latest die revisions; pins 83–84 are reserved for future density extensions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-100BZI and AS7C3256B-10JIN, the 71V3559S80BQI uniquely combines ZBT™ zero turnaround, configurable burst order, industrial temperature rating, and integrated JTAG - making it the only viable option for deterministic high-throughput synchronous memory in telecom and industrial control.

Availability

71V3559S80BQI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric interfaces, DSP data cache extension, and industrial motion controller memory requiring stable component supply across extended lifecycle programs.

Supply support for 71V3559S80BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 71V3559S80BQI belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed, low-latency memory subsystems in networking equipment, baseband processors, and real-time embedded systems demanding deterministic burst access and zero bus turnaround.

FAQ

What is the memory organization and total capacity of the 71V3559S80BQI?

The 71V3559S80BQI is organized as 256K × 18 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports an 18-bit data bus width optimized for efficient use in packet processing engines and DSP memory interfaces where word-aligned access is critical. The 71V3559S80BQI does not support 128K × 36 mode - that is exclusive to the 71V3557 variant.

Does the 71V3559S80BQI support both linear and interleaved burst modes?

Yes, the 71V3559S80BQI supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear mode, LBO = HIGH enables interleaved mode. This flexibility allows alignment with CPU cache line structures or DSP memory access patterns. The 71V3559S80BQI implements the burst counter synchronously and ensures wrap-around behavior upon completion.

What is the role of the ZZ pin on the 71V3559S80BQI, and how does it affect power consumption?

The ZZ pin on the 71V3559S80BQI is a synchronous sleep mode input; when driven HIGH, it gates the internal clock and places the device in its lowest power state while guaranteeing data retention. Power drops significantly during ZZ assertion, making it ideal for duty-cycled applications like motion controller idle states. The 71V3559S80BQI resumes normal operation synchronously on the next valid CLK edge after ZZ returns LOW.

How many chip enable signals does the 71V3559S80BQI have, and what are their polarities?

The 71V3559S80BQI has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. Deselection occurs if any one is deasserted, forcing the I/O bus into high-impedance state one clock cycle later - a deterministic timing behavior critical for multi-SRAM depth expansion.

Is JTAG boundary scan supported on the 71V3559S80BQI, and which pins are used?

Yes, the 71V3559S80BQI includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (with internal pull-up) implement the test access port. These pins are dedicated and do not share functionality with other signals. JTAG is fully operational in both commercial and industrial temperature grades of the 71V3559S80BQI, supporting board-level interconnect testing and in-system validation.