Renesas 71V3559S80PFG8

Overview

71V3559S80PFG8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 256K x 18 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround architecture. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom data path buffers.

For engineers reviewing the 71V3559S80PFG8 datasheet, 71V3559S80PFG8 pinout, 71V3559S80PFG8 application, or 71V3559S80PFG8 equivalent, key selection criteria include burst mode timing compatibility, ZBT™ dead-cycle elimination in read/write transitions, TQFP-100 package footprint, and support for industrial temperature range (–40°C to +85°C) in memory subsystems requiring deterministic latency.

Technical Context

The 71V3559S80PFG8 implements a synchronous dual-edge-triggered interface with address/control registration on CLK rising edge and flow-through data output (no output register). Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing - both sequences fully defined in the datasheet with wraparound behavior.

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion without external logic; CEN suspends all synchronous operation while preserving register state; ZZ enables low-power sleep mode with guaranteed data retention. OE is asynchronous but typically tied low due to internally synchronized output buffer enable.

Key Specifications

Pinout & Package

71V3559S80PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is marked by dot; top-side marking includes "71V3559S80PFG8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355KV18-100BZI and AS7C3256A-10JIN, the 71V3559S80PFG8 uniquely delivers ZBT™-optimized bus efficiency, integrated burst sequencing, and industrial-temperature JTAG testability - making it irreplaceable in existing designs targeting zero-turnaround memory subsystems.

Availability

71V3559S80PFG8 is available at Aetrix Electronics and suitable for base station packet buffering, industrial PLC data logging, telecom line card control memory, and avionics data acquisition modules requiring stable component supply across extended product lifecycles.

Supply support for 71V3559S80PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management solutions for communications, computing, and industrial markets.

The 71V3559S80PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed data path applications demanding deterministic latency, burst efficiency, and robust testability in telecom infrastructure and mission-critical embedded systems.

FAQ

What is the memory organization and total capacity of the 71V3559S80PFG8?

The 71V3559S80PFG8 is organized as 256K words × 18 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration uses address lines A0–A17 and supports 18-bit parallel data transfers. The device is pin-compatible with the 128K × 36 variant (71V3557S80PFG8) in the same TQFP-100 package, enabling layout reuse across density options.

Does the 71V3559S80PFG8 support burst mode, and how is burst order selected?

Yes, the 71V3559S80PFG8 supports 4-word burst mode with selectable linear or interleaved sequence. Burst order is controlled by the LBO pin: LBO = LOW selects linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on ADV/LD = HIGH and wraps around after the fourth word - all behavior is synchronous and fully documented in the timing tables.

What is the role of the ZZ pin on the 71V3559S80PFG8, and how does it affect power consumption?

The ZZ pin on the 71V3559S80PFG8 is an active-high synchronous sleep mode input. When asserted, it gates the internal clock and places the device in its lowest power state while guaranteeing full data retention. In sleep mode, core and I/O supply currents drop significantly - enabling energy savings in intermittently active systems like remote sensors or standby communication channels without losing buffered data.

How many chip enable signals does the 71V3559S80PFG8 have, and what are their polarities?

The 71V3559S80PFG8 has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This asymmetric enable scheme allows flexible memory banking and depth expansion using minimal external logic - for example, decoding higher address bits to drive CE2 while tying CE1/CE2 to common select lines.

Is JTAG boundary scan supported on the 71V3559S80PFG8, and which pins are used?

Yes, the 71V3559S80PFG8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (active-low, pull-up) form the test access port. These signals are synchronous to TCK and appear on dedicated pins in the TQFP-100 package (e.g., TMS = pin U16, TDI = pin U15). JTAG functionality is present in all "S" and "SA" variants, with TRST omitted if not requested.