Renesas 71V3559S80PFGI8
- Part No.:
- 71V3559S80PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3559S80PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3559S80PFGI8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround between read/write cycles. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1) for system-level test in high-speed networking and packet buffering applications.
For engineers reviewing the 71V3559S80PFGI8 datasheet, 71V3559S80PFGI8 pinout, 71V3559S80PFGI8 application, or 71V3559S80PFGI8 equivalent, key selection criteria include its TQFP-100 package, synchronous burst counter architecture, 3.3V core/I/O supply compatibility, sleep mode (ZZ) support, and industrial temperature range (–40°C to +85°C).
Technical Context
The 71V3559S80PFGI8 implements a synchronous dual-edge-triggered interface with address/control registered on the rising CLK edge and data flow-through output (no output register). Its burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing order - critical for cache-line-aligned memory access in switch fabric controllers.
Three chip enables (CE1, CE2, CE2) enable depth expansion without external logic; CEN suspends all synchronous operation while preserving internal state; OE remains asynchronous but may be tied low. The device integrates JTAG TAP controller with optional TRST and supports sleep mode via synchronous ZZ input for dynamic power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 (4.5 Mbit); supports 256K × 18 via pin-compatible variant |
| Clock Frequency | 100 MHz - enables 10 ns cycle time for high-throughput packet buffer systems |
| Access Time | 7.5 ns clock-to-data - defines minimum latency from CLK rise to valid I/O output |
| Supply Voltage | VDD = VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded networking hardware |
| Burst Length | 4-word fixed - eliminates four sequential address asserts per burst, reducing bus overhead |
| Byte Write Control | BW1–BW4 active-low - enables selective 9-bit byte writes without masking logic |
Pinout & Package
71V3559S80PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 64 supports ZZ (sleep mode) on latest die revisions; pins 83/84 are reserved for future density extensions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous 18-bit address bus; latched on rising CLK when ADV/LD = LOW and chip enabled |
| CE1, CE2, CE2 | Chip Enable | Three independent enables: CE1/CE2 active-low, CE2 active-high; any false deselects in one cycle |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines direction of I/O[0:31]/I/OP[1:4] one cycle later |
| ADV/LD | Address Load / Burst Advance | LOW loads new external address; HIGH increments internal burst counter - controls burst sequencing |
| LBO | Burst Order Select | Static input: LOW = linear, HIGH = interleaved - matches CPU/cache burst protocols |
| CLK | System Clock | Rising-edge-triggered master clock; all synchronous timing referenced to this edge |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no output register) |
| ZZ | Sleep Mode | Synchronous HIGH gates internal CLK and reduces power; data retention guaranteed |
| TMS, TDI, TCK, TDO, TRST | JTAG Interface | IEEE 1149.1-compliant boundary scan; TRST optional asynchronous reset |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes - essential for full-duplex packet buffering |
| Flow-Through Outputs | No output register reduces read latency by one clock cycle vs. registered-output SRAMs |
| 4-Word Burst Counter | Reduces address bus traffic by 75% during sequential accesses - improves bus efficiency in burst-oriented systems |
| Individual Byte Write Enables | BW1–BW4 allow precise 9-bit sub-word writes without external byte-lane gating logic |
| Three Chip Enables | Supports seamless depth expansion (e.g., 2× 128K×36 → 256K×36) without glue logic |
| JTAG Boundary Scan | Enables IEEE 1149.1-compliant board-level test and interconnect verification in dense PCB layouts |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Primary synchronous buffer providing zero-turnaround read/write for backpressure-free data flow between MAC and switch fabric. Use Value: 7.5 ns clock-to-data access and burst capability reduce average packet latency by up to 30% versus non-ZBT SRAMs in 10 Gbps+ line cards. |
Use Scenario: Temporary storage of ATM cells or Ethernet frames in carrier-grade DSLAMs and OLTs requiring deterministic timing. IC Role / Device Role / Timing Role: Dual-port-equivalent memory accessed via burst-mode DMA engines synchronized to line-rate clocks. Use Value: Flow-through outputs and 100 MHz operation sustain sustained 3.2 GB/s bandwidth - matching OC-192/STM-64 interface rates. |
| Industrial PLC Real-Time Data Cache | Radar Signal Processing FIFO |
|
Use Scenario: Caching sensor fusion data and control setpoints in deterministic motion-control systems with microsecond jitter requirements. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to FPGA-based real-time sequencers. Use Value: Sleep mode (ZZ) cuts standby power by >80%, extending uptime in fanless industrial enclosures without thermal throttling. |
Use Scenario: First-in-first-out buffering of digitized RF samples between ADC and FFT engine in phased-array radar front ends. IC Role / Device Role / Timing Role: High-reliability burst-access memory supporting interleaved addressing for pipeline-optimized FFT input ordering. Use Value: Interleaved burst mode (LBO = HIGH) aligns with radix-2 FFT memory access patterns, eliminating software address remapping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 128K × 36, 100 MHz, QDR-II architecture with separate read/write ports; no ZZ sleep mode | Higher bandwidth (200 MHz effective) but requires dual-clock domain handling and lacks integrated burst counter | Prefer for asymmetric read-heavy workloads where QDR-II's dual-port advantage outweighs complexity |
| AS7C33128PFSI-10BIN | 128K × 36, 100 MHz, standard sync SRAM with registered outputs; no JTAG or burst counter | Lower cost but adds 1-cycle output latency; lacks flow-through and ZBT features | Acceptable for non-latency-critical control-plane buffers where BOM cost dominates |
Compared with CY7C1371DV33-100AXC and AS7C33128PFSI-10BIN, the 71V3559S80PFGI8 uniquely delivers zero-turnaround operation, integrated burst sequencing, and JTAG testability in a single industrial-qualified TQFP package - making it optimal for latency-sensitive, testable, and upgradeable networking hardware.
Availability
71V3559S80PFGI8 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and industrial PLC real-time data caches requiring stable component supply across extended product lifecycles.
Supply support for 71V3559S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3559S80PFGI8 belongs to IDT's ZBT™ synchronous SRAM family, engineered specifically for zero-latency bus turnaround in packet-switching infrastructure and real-time control systems.
FAQ
What is the memory organization and total capacity of the 71V3559S80PFGI8?
The 71V3559S80PFGI8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths common in high-speed networking processors and FPGA interfaces, and is pin-compatible with the 256K × 18 variant for flexible density scaling.
Does the 71V3559S80PFGI8 support burst read and write operations, and how is burst order controlled?
Yes, the 71V3559S80PFGI8 supports fixed 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3), matching industry-standard CPU and DSP burst protocols.
What is the function of the ZZ pin on the 71V3559S80PFGI8, and what power savings does it provide?
The ZZ pin on the 71V3559S80PFGI8 enables synchronous sleep mode: when driven HIGH, it internally gates the clock and reduces dynamic power consumption to minimal levels while guaranteeing data retention. In industrial applications, this feature cuts standby power by over 80%, supporting fanless thermal design and extended operational uptime.
How does the 71V3559S80PFGI8 implement zero bus turnaround (ZBT™), and what system-level benefit does it deliver?
The 71V3559S80PFGI8 achieves ZBT™ by eliminating dead cycles between consecutive read and write operations - the bus transitions direction within a single clock cycle. This enables continuous data flow in packet buffering applications, increasing effective throughput by up to 30% compared to conventional synchronous SRAMs that require idle cycles for bus turnaround.
Is JTAG boundary scan supported on the 71V3559S80PFGI8, and which pins are used?
Yes, the 71V3559S80PFGI8 includes IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST (pin 65 in TQFP) implement the full TAP controller. This allows automated PCB interconnect testing and in-system programming verification - critical for high-density telecom and networking boards.
71V3559S80PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3559S80PFGI8 FAQ
1.How can I place an order for 71V3559S80PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3559S80PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3559S80PFGI8 reliable?
The price and inventory of 71V3559S80PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S80PFGI8 is usually 5 days.
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Once your 71V3559S80PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3559S80PFGI8?
For technical support, including 71V3559S80PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S80PFGI8 requirements.
6.How does Aetrix verify that 71V3559S80PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3559S80PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S80PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3559S80PFGI8?
All 71V3559S80PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S80PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3559S80PFGI8 part is unused and in its original packaging.
Return procedure for 71V3559S80PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3559S80PFGI8 Tags

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