My Inquiry
My Account
Renesas 71V3559S85BQ
- Part No.:
- 71V3559S85BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3559S85BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,897
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3559S85BQ from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 256K x 18 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for seamless read/write transitions. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control via BW1–BW4, and includes JTAG IEEE 1149.1 boundary scan. It is used in high-speed packet buffering and network switch fabric memory subsystems.
For engineers reviewing the 71V3559S85BQ datasheet, 71V3559S85BQ pinout, 71V3559S85BQ application, or 71V3559S85BQ equivalent, key selection criteria include burst mode timing compliance, ZBT™ dead-cycle elimination, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, and JTAG testability support for production validation.
Technical Context
The 71V3559S85BQ implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with sequence order selected by static LBO pin level - enabling deterministic linear or interleaved addressing without external logic.
Three chip enables (CE1, CE2 active-low; CE2 active-high) provide flexible depth expansion, while CEN suspends all synchronous operation without affecting output state. The optional JTAG interface (TMS/TDI/TCK/TDO/TRST) supports IEEE 1149.1 boundary scan, and ZZ enables low-power sleep mode with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18 (4.5 Mbit); supports depth expansion via CE pins |
| Max Clock Frequency | 100 MHz; enables 10 ns cycle time for high-bandwidth data streaming |
| Clock-to-Data Access | 7.5 ns; defines minimum latency from CLK rise to valid output data |
| Supply Voltages | VDD = VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling |
| Burst Length | 4-word fixed; eliminates need for external address sequencing logic |
| Byte Write Control | BW1–BW4 enable independent 9-bit byte writes; avoids full-word overwrites |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for embedded telecom infrastructure |
Pinout & Package
71V3559S85BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin functions are fully defined for the 256K × 18 configuration per IDT DSC-5282/09.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered on CLK rise with ADV/LD low and CE asserted |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 low, CE2 high) allow multi-chip depth expansion |
| R/W | Read/Write Control | Synchronous signal determining access type; latched one cycle before data transfer |
| ADV/LD | Burst Advance / Address Load | Low = load new external address; High = increment internal burst counter |
| LBO | Burst Order Select | Static input: Low = linear burst, High = interleaved burst (IEEE 1149.1-compliant ordering) |
| BW1–BW4 | Byte Write Enables | Active-low per-byte controls for 9-bit segments; supports partial-word writes without read-modify-write |
| CLK | System Clock Input | All synchronous timing referenced to rising edge; OE is the only asynchronous signal |
| I/O0–I/O15, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional bus with flow-through output path; no output register reduces latency |
| ZZ | Sleep Mode Input | High activates internal clock gating; maintains data retention at lowest power state |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1-compliant boundary scan chain; TRST optional asynchronous reset |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads and writes, enabling continuous data throughput in burst-mode switching applications |
| Flow-Through Output Architecture | Removes output register delay, delivering data one clock cycle after address/control setup - critical for low-latency buffer designs |
| 4-Word Burst with Linear/Interleaved Modes | Reduces external address generation logic; LBO pin selects burst order to match processor or DMA controller expectations |
| Individual Byte Write (BW1–BW4) | Enables precise 9-bit segment updates without disturbing adjacent bytes - essential for protocol header manipulation |
| Integrated JTAG Boundary Scan | Supports IEEE 1149.1 for board-level interconnect testing and in-system debug without additional test fixtures |
Applications
| Network Packet Buffering | Telecom Switch Fabric Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in line-rate switches. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress packet buffer with burst-aligned data transfers. Use Value: ZBT™ eliminates turnaround penalties during back-to-back read/write operations required for packet classification and rewrite. | Use Scenario: Providing shared memory for crosspoint arbitration and cell-based ATM or MPLS switching. IC Role / Device Role / Timing Role: Synchronous memory node in distributed switch fabric with deterministic 100 MHz access timing. Use Value: Flow-through outputs and 7.5 ns clock-to-data access ensure sub-10 ns latency for real-time cell forwarding decisions. |
| Baseband Processor Cache | Industrial Real-Time Controller Buffer |
Use Scenario: Serving as instruction/data cache for FPGA-based baseband processors in wireless infrastructure. IC Role / Device Role / Timing Role: External cache memory interfaced directly to processor AXI or PLB bus with burst coherency. Use Value: 4-word burst mode matches typical cache line sizes; byte write enables selective update of control registers without full-line invalidation. | Use Scenario: Buffering sensor fusion data streams in industrial PLCs requiring deterministic response under jitter-prone conditions. IC Role / Device Role / Timing Role: Deterministic-access memory for time-critical I/O data staging with guaranteed industrial temperature operation. Use Value: –40°C to +85°C rating and ZZ sleep mode support unattended operation in harsh factory environments with thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-100BZI | 100 MHz, 256K × 18, but uses QDR-II architecture with separate read/write ports and no ZBT™ feature | Requires dual-port arbitration logic; lacks zero-turnaround benefit for mixed R/W workloads | Select when simultaneous read/write bandwidth outweighs turnaround efficiency |
| AS7C3256B-10JIN | 10 ns access, 256K × 18, but asynchronous interface and no burst counter or JTAG | No clock-synchronized timing; incompatible with synchronous bus protocols like PCI-X or RapidIO | Select only for legacy non-synchronous systems where clock domain isolation is required |
Compared with CY7C1355BV18-100BZI and AS7C3256B-10JIN, the 71V3559S85BQ uniquely delivers ZBT™-enabled zero-turnaround operation within a synchronous, JTAG-testable, industrial-grade package - making it optimal for burst-intensive, mixed-access memory subsystems where latency predictability is critical.
Availability
71V3559S85BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric memory, and industrial real-time controller buffer applications requiring stable component supply across extended product lifecycles.
Supply support for 71V3559S85BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.
The 71V3559S85BQ belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed networking and switching applications demanding deterministic latency, burst efficiency, and robust testability.
FAQ
What is the memory organization and total capacity of the 71V3559S85BQ?
The 71V3559S85BQ is organized as 256K × 18, providing 4,718,592 bits (4.5 Mbit) of synchronous SRAM storage. This configuration supports 18-bit data paths and is optimized for depth expansion using its three chip enable pins (CE1, CE2, CE2), enabling scalable memory subsystems without redesigning the address bus.
Does the 71V3559S85BQ support burst mode, and how is burst order controlled?
Yes, the 71V3559S85BQ supports a fixed 4-word burst mode. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved addressing (A0, A2, A1, A3). This static selection ensures predictable burst behavior aligned with host processor expectations.
What is the role of the ZZ pin on the 71V3559S85BQ, and does it guarantee data retention?
The ZZ pin on the 71V3559S85BQ is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to the lowest level while maintaining full data retention - verified across the industrial temperature range (–40°C to +85°C). This makes the 71V3559S85BQ suitable for power-sensitive applications with infrequent but deterministic wake-up patterns.
Is JTAG boundary scan supported on the 71V3559S85BQ, and which pins are used?
Yes, the 71V3559S85BQ includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional asynchronous reset) are dedicated to this function. TRST may be left floating if unused, as the TAP controller resets automatically at power-up per IEEE 1149.1 specification - simplifying board design while preserving test coverage.
How does the 71V3559S85BQ implement zero bus turnaround (ZBT™), and what is its practical impact?
The 71V3559S85BQ implements ZBT™ by eliminating dead cycles between consecutive read and write operations through synchronized control logic and flow-through outputs. Unlike conventional SRAMs requiring bus idle cycles for direction reversal, the 71V3559S85BQ allows immediate back-to-back accesses - increasing effective bandwidth by up to 25% in mixed R/W traffic scenarios common in packet buffering and switch fabric applications.
71V3559S85BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3559S85BQ FAQ
1.How can I place an order for 71V3559S85BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3559S85BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3559S85BQ reliable?
The price and inventory of 71V3559S85BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S85BQ is usually 5 days.
3.What payment methods are accepted for 71V3559S85BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S85BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3559S85BQ?
71V3559S85BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3559S85BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3559S85BQ?
For technical support, including 71V3559S85BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S85BQ requirements.
6.How does Aetrix verify that 71V3559S85BQ is sourced from the original manufacturer or authorized distributors?
All 71V3559S85BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S85BQ meets industry standards.
7.What is the process for return or replacement of 71V3559S85BQ?
All 71V3559S85BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S85BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3559S85BQ part is unused and in its original packaging.
Return procedure for 71V3559S85BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3559S85BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
