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Renesas 71V3559S85BQG
- Part No.:
- 71V3559S85BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3559S85BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3559S85BQG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K × 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for seamless read/write transitions. It operates at 100 MHz with 7.5 ns clock-to-data access, supports individual byte write control (BW1–BW4), and includes JTAG boundary scan (IEEE 1149.1) in a 100-pin TQFP package - used in high-speed packet buffering and network switch data planes.
For engineers reviewing the 71V3559S85BQG datasheet, 71V3559S85BQG pinout, 71V3559S85BQG application, or 71V3559S85BQG equivalent, key selection criteria include ZBT™ timing compliance, 3.3V core/I/O supply tolerance (±5%), synchronous burst counter behavior, and TQFP-100 mechanical compatibility with legacy IDT SRAM footprints.
Technical Context
The 71V3559S85BQG implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, while data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with sequence order selected by static LBO pin (VDD = interleaved, VSS = linear).
Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion, and Clock Enable (CEN) suspends all synchronous operation without affecting output state. The device integrates optional IEEE 1149.1 JTAG test logic with TMS/TDI/TCK/TDO/TRST pins and supports sleep mode via synchronous ZZ input to minimize power during idle cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 256K × 18 via pin-compatible variant - defines data bus width and address space for system memory mapping. |
| Clock Frequency | 100 MHz maximum; enables 10-ns cycle time for high-bandwidth streaming applications like telecom line cards. |
| Access Time | 7.5 ns clock-to-data (tCD); guarantees deterministic read latency critical for real-time buffer synchronization. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; requires separate core and I/O rail regulation to meet ZBT timing margins. |
| Burst Length | Fixed 4-word burst; eliminates external address sequencing logic and reduces controller overhead in burst-intensive protocols. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in uncontrolled ambient environments such as base station enclosures. |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST; enables in-system test and debug without requiring external boundary-scan controllers. |
Pinout & Package
71V3559S85BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revisions; pins 83–84 are reserved for future density extensions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous 18-bit address bus; latched on rising CLK when ADV/LD = LOW and chip enabled - selects 128K word location. |
| CE1, CE2, CE2 | Chip Enable | Three independent enables (CE1/CE2 active-low, CE2 active-high); any false condition deactivates memory access but allows pending transfers to complete. |
| R/W | Read/Write Control | Synchronous command signal; determines cycle type (read or write) at load time - no separate write-enable pin required. |
| ADV/LD | Advance / Load Address | Controls burst counter: LOW loads new external address; HIGH increments internal counter - enables burst-mode efficiency. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence (VDD = interleaved, VSS = linear); must remain stable during burst operation to prevent misalignment. |
| BW1–BW4 | Byte Write Enable | Four active-low signals controlling 9-bit byte lanes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); permits partial-word writes without masking logic. |
| CLK | System Clock | Primary timing reference; all synchronous inputs sampled on rising edge - defines cycle boundaries for address, control, and data staging. |
| ZZ | Sleep Mode | Synchronous high-active input that gates internal clock and reduces power consumption while retaining data - pin 64 in TQFP package. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive reads and writes - enables back-to-back memory transactions without bus arbitration delay. |
| Flow-Through Outputs | No output register; data appears on I/O pins one clock cycle after read initiation - reduces output latency versus registered-output SRAMs. |
| Internally Synchronized OE | OE is asynchronous but internally synchronized to CLK; allows tying OE low permanently without timing violation concerns. |
| Individual Byte Write Control | Four dedicated BWx pins enable selective 9-bit writes - avoids full-word overwrite in cache coherency or protocol header updates. |
| Three Chip Enables | Supports depth expansion across multiple devices using CE1/CE2/CE2 logic - simplifies design of wider or deeper memory subsystems. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing variable-length Ethernet frames in ingress/egress queues of multi-gigabit switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory with burst-read capability to feed ASIC packet processors. Use Value: 7.5 ns tCD and ZBT™ operation ensure deterministic frame forwarding under full line-rate traffic. |
Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers requiring jitter-free data staging. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between serial framer and parallel bus interface. Use Value: Flow-through outputs and 100 MHz clock support precise timing alignment for TDM payload mapping. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
|
Use Scenario: Cyclic acquisition and timestamped storage of sensor data in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Non-volatile-buffered memory holding process variables between CPU polling intervals. Use Value: Industrial temperature range (–40°C to +85°C) and sleep mode (ZZ) enable reliable operation in harsh cabinet environments. |
Use Scenario: Real-time buffering of uncompressed DICOM image tiles during CT/MRI scan acquisition. IC Role / Device Role / Timing Role: High-bandwidth temporary storage interfacing between ADC array and image processing FPGA. Use Value: 128K × 36 organization matches 36-bit pixel bus width; 4-word burst efficiently transfers tile metadata and pixel blocks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355KV18-100BZXI | 128K × 36, 100 MHz, 3.3V, but uses QDR-II architecture with separate read/write ports - no ZBT™ or flow-through outputs. | Requires dual-port controller logic; not drop-in for ZBT™-optimized designs relying on single-bus turnaround elimination. | Select only if system requires concurrent read/write access and can accommodate QDR-II timing and pinout changes. |
| AS7C33128PFSIG | 128K × 36, 100 MHz, 3.3V, standard sync SRAM with registered outputs - lacks ZBT™, burst counter, and JTAG. | Higher read latency (≥10 ns) and no burst capability; suitable only for non-burst, non-zero-turnaround use cases. | Choose when JTAG testability and burst efficiency are unnecessary, and cost is primary constraint. |
Compared with CY7C1355KV18-100BZXI and AS7C33128PFSIG, the 71V3559S85BQG uniquely delivers zero bus turnaround, flow-through outputs, and integrated burst control - making it irreplaceable in latency-critical, burst-oriented memory subsystems without architectural redesign.
Availability
71V3559S85BQG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V3559S85BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.
The 71V3559S85BQG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed networking and telecom equipment where deterministic latency, burst efficiency, and bus turnaround elimination are mandatory.
FAQ
What is the memory organization and total capacity of the 71V3559S85BQG?
The 71V3559S85BQG is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports a 36-bit data bus and 18-bit address space (A0–A17), enabling direct interfacing with 36-bit wide processors or ASICs without external data-width conversion logic.
Does the 71V3559S85BQG support burst read and write operations, and how is burst order controlled?
Yes, the 71V3559S85BQG supports fixed 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = VDD enables interleaved addressing (e.g., 0→1→2→3), while LBO = VSS selects linear order (0→1→2→3). The LBO pin is static and must not change during burst execution.
How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V3559S85BQG?
ZBT™ eliminates dead cycles between alternating read and write operations by allowing immediate transition from one to the other on successive clock edges. The 71V3559S85BQG achieves this through synchronized address/control registration and flow-through outputs - no external turnaround delay or bus-hold circuitry is needed.
What is the role of the ZZ pin in the 71V3559S85BQG, and how is it implemented in the TQFP package?
The ZZ pin enables synchronous sleep mode, gating the internal clock and reducing power consumption while maintaining data retention. In the 71V3559S85BQG TQFP package, ZZ is assigned to pin 64 - confirmed in the datasheet's pin configuration diagrams and functional descriptions for latest die revisions.
Is JTAG boundary scan supported on the 71V3559S85BQG, and which pins are used?
Yes, the 71V3559S85BQG includes optional IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and TRST (optional reset) are dedicated for this function and appear as NC on non-JTAG variants - the "S" suffix indicates JTAG support is present and functional per datasheet Table 01 and Pin Definitions.
71V3559S85BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3559S85BQG FAQ
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6.How does Aetrix verify that 71V3559S85BQG is sourced from the original manufacturer or authorized distributors?
All 71V3559S85BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S85BQG meets industry standards.
7.What is the process for return or replacement of 71V3559S85BQG?
All 71V3559S85BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S85BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3559S85BQG part is unused and in its original packaging.
Return procedure for 71V3559S85BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3559S85BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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