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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3559S85BQG8

Name: 71V3559S85BQG8
Brand: Renesas
SKU: 71V3559S85BQG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3559S85BQG8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V3559S85BQG8.pdf

Description:: IC SRAM 4.5MBIT PAR 165CABGA

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Product details

Overview

71V3559S85BQG8 from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 256K x 18 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), zero bus turnaround architecture, and support for 100 MHz operation with 7.5 ns clock-to-data access. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic read/write switching.

For engineers reviewing the 71V3559S85BQG8 datasheet, 71V3559S85BQG8 pinout, 71V3559S85BQG8 application, or 71V3559S85BQG8 equivalent, key selection criteria include burst mode control via ADV/LD and LBO pins, individual byte write enables (BW1–BW4), JTAG boundary scan support (IEEE 1149.1), and compatibility with 3.3V core/I/O supplies across commercial and industrial temperature ranges.

Technical Context

The 71V3559S85BQG8 implements a synchronous dual-edge-triggered interface with address/control registration on the rising CLK edge and flow-through data output path-no output register. Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing order.

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion; CEN suspends all synchronous operation without affecting output state; ZZ enables low-power sleep mode with guaranteed data retention. The device supports optional IEEE 1149.1 JTAG test access via TMS/TDI/TCK/TDO/TRST pins.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K x 18 (4.5 Mbit) - supports 18-bit data bus width with full addressability of 256,000 words.
Clock Frequency	100 MHz - enables 10-ns cycle time for high-throughput buffering in packet-switching applications.
Access Time	7.5 ns clock-to-data - guarantees deterministic timing for synchronous read cycles without wait states.
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation for noise isolation.
Burst Length	4-word fixed burst - reduces address bus traffic by delivering four consecutive words per ADV/LD assertion.
Operating Temperature	–40°C to +85°C - qualified for industrial-grade deployment in base station and router hardware.
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with automated PCB assembly.

Pinout & Package

71V3559S85BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 marked by dot; top-side marking includes "71V3559S85BQG8" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous inputs latched on rising CLK edge when ADV/LD = LOW; define 256K-word address space.
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and hierarchical memory decoding.
R/W	Read/Write Control	Synchronous signal determining cycle type; data transfer occurs one clock cycle after R/W sampling.
ADV/LD	Advance Burst / Load Address	Drives burst counter increment (HIGH) or loads new external address (LOW); controls burst initiation and termination.
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence: LOW = linear, HIGH = interleaved; must remain stable during burst operation.
BW1–BW4	Byte Write Enables	Four active-low signals enabling independent 9-bit byte writes; BW1 controls I/O[0:8], BW4 controls I/O[27:35].
CLK	System Clock Input	Rising-edge-triggered master clock; all synchronous timing referenced to this edge (except OE and TRST).
OE	Asynchronous Output Enable	Active-low; tri-states outputs immediately regardless of CLK-used for bus sharing without timing coordination.
ZZ	Sleep Mode Input	Active-high synchronous input gating internal CLK and reducing power consumption while retaining memory contents.
I/O0–I/O17, I/OP1–I/OP2	Data I/O Pins	18-bit bidirectional data bus plus two parity bits; registered input path, flow-through output path (no output register).
TMS, TDI, TCK, TDO, TRST	JTAG Test Interface	IEEE 1149.1-compliant boundary scan chain; TRST is optional asynchronous reset (internal pull-up).
VDD, VDDQ, VSS	Power/Ground	VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; VSS = common ground; decoupling required per JEDEC layout guidelines.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between read and write operations-enables back-to-back accesses without bus idle time.
4-Word Burst Mode	Reduces address bus bandwidth by 75% for sequential accesses; configurable linear or interleaved via LBO pin.
Individual Byte Write Control	Four independent BWx pins allow partial-word writes without masking logic or additional glue circuitry.
Three Chip Enables	Supports seamless memory depth expansion using CE1/CE2/CE2 combinations-no external decode logic needed.
Optional JTAG Boundary Scan	IEEE 1149.1 compliance enables in-system testability and interconnect verification on dense PCBs.
Sleep Mode (ZZ)	Reduces dynamic power by gating internal clock while preserving data-critical for thermal management in fanless systems.

Applications

Network Packet Buffering	Telecom Line Card Cache
Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as first-level packet buffer with deterministic 7.5 ns read latency and zero-turnaround write-read transitions. Use Value: Enables line-rate processing at 10 Gbps by eliminating bus idle cycles during burst-mode frame assembly/disassembly.	Use Scenario: Caching protocol headers and lookup tables in SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: Low-latency memory for real-time header parsing and cross-connect configuration storage. Use Value: Supports 100 MHz clock domain synchronization with FPGA-based control logic while maintaining data integrity across –40°C to +85°C.
Baseband Processor Memory	Industrial PLC Data Logging
Use Scenario: Temporary storage of IQ samples in LTE femtocell baseband units prior to FFT processing. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly with DSP DMA engines using ADV/LD-driven address sequencing. Use Value: Delivers four consecutive 18-bit samples per burst cycle-reducing DMA overhead and improving spectral efficiency.	Use Scenario: Buffering sensor acquisition data in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-temperature-rated memory providing reliable short-term storage during communication interruptions. Use Value: Guaranteed data retention in ZZ sleep mode allows power cycling without volatile data loss during brownout events.

Network Packet Buffering

Telecom Line Card Cache

Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as first-level packet buffer with deterministic 7.5 ns read latency and zero-turnaround write-read transitions.

Use Value: Enables line-rate processing at 10 Gbps by eliminating bus idle cycles during burst-mode frame assembly/disassembly.

Use Scenario: Caching protocol headers and lookup tables in SONET/SDH add-drop multiplexers.

IC Role / Device Role / Timing Role: Low-latency memory for real-time header parsing and cross-connect configuration storage.

Use Value: Supports 100 MHz clock domain synchronization with FPGA-based control logic while maintaining data integrity across –40°C to +85°C.

Baseband Processor Memory

Industrial PLC Data Logging

Use Scenario: Temporary storage of IQ samples in LTE femtocell baseband units prior to FFT processing.

IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly with DSP DMA engines using ADV/LD-driven address sequencing.

Use Value: Delivers four consecutive 18-bit samples per burst cycle-reducing DMA overhead and improving spectral efficiency.

Use Scenario: Buffering sensor acquisition data in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-temperature-rated memory providing reliable short-term storage during communication interruptions.

Use Value: Guaranteed data retention in ZZ sleep mode allows power cycling without volatile data loss during brownout events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1355BV18-100BZXI	100 MHz, 256K × 18, but uses pipelined output register (not flow-through); no ZZ sleep mode.	Requires OE timing coordination for bus sharing; less suitable for zero-latency burst chaining.	Select when system design accommodates pipelined output delay and does not require low-power sleep.
AS7C3256B-10JIN	10 ns access, 256K × 18, asynchronous interface; no burst counter, no JTAG, no CEN/ADV/LD logic.	Cannot support ZBT™-style back-to-back reads/writes; lacks synchronous control features for high-speed bus protocols.	Choose only for legacy designs where synchronous timing and burst capability are unnecessary.

Compared with CY7C1355BV18-100BZXI and AS7C3256B-10JIN, the 71V3559S85BQG8 uniquely delivers flow-through outputs, integrated burst sequencing, and sleep mode-making it optimal for power-constrained, high-throughput telecom and networking buffers where deterministic timing and low idle power are critical.

Availability

71V3559S85BQG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processor memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3559S85BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 71V3559S85BQG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched infrastructure where zero bus turnaround and burst efficiency are mandatory.

FAQ

What is the memory organization and total capacity of the 71V3559S85BQG8?

The 71V3559S85BQG8 is organized as 256K × 18, providing 4,608,000 bits (4.5 Mbit) of synchronous SRAM storage. This configuration supports an 18-bit data bus with full addressing of 262,144 unique words. It is pin-compatible with the 128K × 36 variant (71V3557S85BQG8) in the same family but differs in address width and data width mapping.

Does the 71V3559S85BQG8 support burst mode, and how is it configured?

Yes, the 71V3559S85BQG8 supports a fixed 4-word burst mode controlled by the ADV/LD and LBO pins. When ADV/LD is sampled HIGH, the internal burst counter increments; LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) addressing order. Burst operation eliminates repeated address setup, improving effective bandwidth in sequential-access applications.

What is the function of the ZZ pin on the 71V3559S85BQG8?

The ZZ pin on the 71V3559S85BQG8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to the minimum level while guaranteeing data retention. This feature is essential for thermal management in fanless telecom equipment and extends operational uptime during intermittent activity periods.

How does the 71V3559S85BQG8 implement zero bus turnaround (ZBT™)?

The 71V3559S85BQG8 achieves ZBT™ by eliminating dead cycles between read and write operations through synchronized control logic and flow-through outputs. Unlike traditional SRAMs, it allows immediate transition from a read to a write (or vice versa) within the same clock domain-enabled by separate address load (ADV/LD) and data transfer timing, ensuring continuous bus utilization.

Is JTAG boundary scan supported on the 71V3559S85BQG8, and what pins are involved?

Yes, the 71V3559S85BQG8 includes optional IEEE 1149.1-compliant JTAG boundary scan. Required pins are TMS (Test Mode Select), TDI (Test Data In), TCK (Test Clock), TDO (Test Data Out), and TRST (optional asynchronous reset). These are dedicated pins in the 100-pin TQFP package and support in-system interconnect testing and debug visibility.

71V3559S85BQG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V3559S85BQG8 FAQ

1.How can I place an order for 71V3559S85BQG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3559S85BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V3559S85BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S85BQG8 is usually 5 days.

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6.How does Aetrix verify that 71V3559S85BQG8 is sourced from the original manufacturer or authorized distributors?

All 71V3559S85BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S85BQG8 meets industry standards.

7.What is the process for return or replacement of 71V3559S85BQG8?

All 71V3559S85BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S85BQG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3559S85BQG8 part is unused and in its original packaging.

Return procedure for 71V3559S85BQG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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