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Renesas 71V3559S85PFG
- Part No.:
- 71V3559S85PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3559S85PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,025
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Product details
Overview
71V3559S85PFG from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM organized as 128K x 36 (4.5 Mbit), featuring flow-through outputs, 4-word burst capability (linear or interleaved), and zero bus turnaround for high-speed memory interfacing in networking and telecom data paths. It operates at 100 MHz with 7.5 ns clock-to-data access and supports individual byte write control via BW1–BW4.
For engineers reviewing the 71V3559S85PFG datasheet, 71V3559S85PFG pinout, 71V3559S85PFG application, or 71V3559S85PFG equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V core/I/O supply compliance, and JTAG boundary-scan support for system-level testability.
Technical Context
The 71V3559S85PFG implements a synchronous dual-edge-triggered architecture where address/control inputs are registered on the rising CLK edge, while data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with sequence order determined by static LBO pin state.
Three chip enables (CE1, CE2 active-low; CE2 active-high) enable flexible depth expansion, and Clock Enable (CEN) suspends all synchronous operation without affecting output state. Sleep mode (ZZ) gates internal clocking to minimize power while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 (4.5 Mbit); supports 256K × 18 via pin-compatible variant |
| Max Clock Frequency | 100 MHz - enables 10 ns cycle time for high-bandwidth packet buffering |
| Clock-to-Data Access | 7.5 ns - defines minimum latency from CLK rise to valid Q output |
| Burst Length | 4-word fixed - reduces address bus traffic during sequential accesses |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core/I/O rail regulation |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing without external test fixtures |
Pinout & Package
71V3559S85PFG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is marked by corner cut; pins 14, 64, and 66 are VSS/ZZ-capable per latest die revision.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Synchronous address latch triggered on CLK rise with ADV/LD low and CEN low |
| CE1, CE2, CE2 | Chip Enable | Three independent enables: CE1/CE2 active-low, CE2 active-high; any false deselects device |
| R/W | Read/Write Control | Synchronous signal determining load-cycle direction; sampled at CLK rise with ADV/LD low |
| ADV/LD | Address Load / Burst Advance | LOW loads new external address; HIGH increments internal burst counter |
| LBO | Burst Order Select | Static input: LOW = linear, HIGH = interleaved burst sequence |
| BW1–BW4 | Byte Write Enable | Active-low per 9-bit byte; enables partial writes without full-word masking logic |
| CLK | System Clock | Rising-edge synchronous reference for all registers except OE and TRST |
| OE | Output Enable | Asynchronous; tri-states I/Os when HIGH - may be tied LOW for simplified read operation |
| ZZ | Sleep Mode | Active-high synchronous input; gates internal clock to reduce dynamic power while retaining data |
| TMS/TDI/TCK/TDO/TRST | JTAG Interface | IEEE 1149.1 boundary-scan chain; TRST optional asynchronous reset |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - critical for pipelined bus architectures |
| Flow-Through Outputs | No output register; data appears on I/O bus one CLK cycle after address/control setup - minimizes read latency |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit byte updates - avoids read-modify-write overhead in cache coherency logic |
| Internally Synchronized OE | OE assertion is internally synchronized to CLK - prevents metastability on asynchronous deassertion |
| Three Independent Chip Enables | Supports seamless depth expansion across multiple devices without external decode logic |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching fabric. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM serving as first-level packet buffer with deterministic 7.5 ns read access. Use Value: ZBT™ eliminates bus turnaround delay, enabling back-to-back reads/writes at 100 MHz - sustaining 3.6 Gbps sustained throughput on 36-bit bus. | Use Scenario: Frame assembly/disassembly buffers in OC-192/STM-64 line interface cards. IC Role / Device Role / Timing Role: Synchronous burst-access memory interfacing directly with SerDes MAC controllers. Use Value: 4-word burst mode reduces address bus toggling by 75% during sequential frame processing - lowering EMI and routing complexity. |
| Cache Tag Storage in Baseband Processors | JTAG-Enabled Board-Level Test Infrastructure |
Use Scenario: Storing cache tag arrays and directory entries in wireless baseband SoCs requiring fast associative lookups. IC Role / Device Role / Timing Role: Low-power, industrial-temp SRAM providing sub-10 ns tag compare latency with sleep-mode power gating. Use Value: ZZ pin enables dynamic clock gating during idle periods - reducing standby current to <100 µA while preserving tag integrity. | Use Scenario: In-circuit test access for memory subsystems in carrier-grade hardware with strict field-reliability requirements. IC Role / Device Role / Timing Role: IEEE 1149.1-compliant SRAM integrated into boundary-scan chain for interconnect and pin-fault diagnostics. Use Value: On-chip JTAG logic eliminates need for external test probes - enabling automated production test of high-density memory interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355KV18-100BZI | 128K × 36, 100 MHz, but uses QDR-II architecture with separate read/write ports and no ZBT™ feature | Requires dual-port controller logic; lacks burst counter and flow-through outputs | Select only if system demands true simultaneous read/write concurrency over ZBT™ latency optimization |
| AS7C33128PFSIG | 128K × 36, 100 MHz, but asynchronous SRAM with no clock domain - no burst or ZBT™ capability | Needs external address sequencing logic; higher access latency (15 ns) and no JTAG support | Consider only for legacy designs lacking clock infrastructure or requiring simple address-in/data-out timing |
Compared with CY7C1355KV18-100BZI and AS7C33128PFSIG, the 71V3559S85PFG delivers deterministic zero-turnaround timing and integrated burst control - reducing controller gate count and PCB routing density in high-speed packet-processing systems.
Availability
71V3559S85PFG is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, cache tag storage, and JTAG-enabled board-level test infrastructure requiring stable component supply across industrial temperature ranges.
Supply support for 71V3559S85PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions.
The IDT71V3559 family was designed specifically for high-speed networking and telecom applications demanding zero-bus-turnaround performance, burst efficiency, and industrial-grade reliability in synchronous memory subsystems.
FAQ
What is the memory organization and total capacity of the 71V3559S85PFG?
The 71V3559S85PFG is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). It shares pinout and timing compatibility with the 256K × 18 variant (IDT71V3557S85PFG), allowing layout reuse across both configurations. This organization supports wide-data-path applications such as packet header storage and frame buffering.
Does the 71V3559S85PFG support burst read and write operations, and how is burst order controlled?
Yes, the 71V3559S85PFG supports 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A1, A2, A3 per IEEE 1149.1-defined pattern). The burst counter advances on ADV/LD = HIGH and wraps automatically after four cycles.
How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V3559S85PFG?
The ZBT™ feature in the 71V3559S85PFG eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal without wait states. This is achieved through synchronized control logic and flow-through outputs, enabling back-to-back transactions at full 100 MHz clock rate - critical for maximizing throughput in high-speed switch fabric memory interfaces.
What are the power supply requirements for the 71V3559S85PFG, and is split-rail operation mandatory?
The 71V3559S85PFG requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). Split-rail operation is mandatory - VDD and VDDQ must be decoupled separately per datasheet guidelines. Violating this causes timing violations and potential I/O drive instability, especially under burst load conditions.
Is JTAG boundary-scan supported on the 71V3559S85PFG, and which pins implement the interface?
Yes, the 71V3559S85PFG includes IEEE 1149.1-compliant JTAG boundary-scan functionality. Pins TMS, TDI, TCK, TDO, and optional TRST implement the test access port. These signals are multiplexed on dedicated pins in the TQFP-100 package (e.g., TMS = Pin U16, TDI = Pin U15) and are functional in all operating modes including sleep (ZZ active), enabling in-system testability without halting normal operation.
71V3559S85PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3559S85PFG FAQ
1.How can I place an order for 71V3559S85PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3559S85PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3559S85PFG reliable?
The price and inventory of 71V3559S85PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3559S85PFG is usually 5 days.
3.What payment methods are accepted for 71V3559S85PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3559S85PFG transactions.
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4.How is shipping managed for 71V3559S85PFG?
71V3559S85PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3559S85PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3559S85PFG?
For technical support, including 71V3559S85PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3559S85PFG requirements.
6.How does Aetrix verify that 71V3559S85PFG is sourced from the original manufacturer or authorized distributors?
All 71V3559S85PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3559S85PFG meets industry standards.
7.What is the process for return or replacement of 71V3559S85PFG?
All 71V3559S85PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3559S85PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3559S85PFG part is unused and in its original packaging.
Return procedure for 71V3559S85PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3559S85PFG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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