Renesas 71V35761S166PFG

Overview

71V35761S166PFG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features self-timed write with global and byte-level write controls. Used in high-speed cache and memory subsystems for networking and telecom equipment.

For engineers reviewing the 71V35761S166PFG datasheet, 71V35761S166PFG pinout, 71V35761S166PFG application, or 71V35761S166PFG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility, TQFP-100 packaging, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan capability in SA variants.

Technical Context

The 71V35761S166PFG implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the asynchronous LBO pin state.

Burst operation is initiated by ADSP/ADSC low and advanced by ADV low; OE enables asynchronous output drive while ZZ enables asynchronous sleep mode with guaranteed data retention. The device supports both global (GW) and per-byte (BW1–BW4) write control with BWE gating, and includes dedicated chip select logic (CE, CS0, CS1) for multi-chip memory configurations.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT 71V35761 PKG100 drawing (Rev. May 18, 2020).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166AXC and AS7C3256B-166JCIN, the 71V35761S166PFG uniquely delivers 36-bit burst-aligned memory with configurable linear/interleaved addressing, pipelined output timing, and industrial-grade sleep mode - making it optimal for high-performance, thermally demanding, and timing-critical embedded systems.

Availability

71V35761S166PFG is available at Aetrix Electronics and suitable for high-speed network infrastructure, telecom baseband processing, industrial motion control, and avionics data acquisition requiring stable component supply and long-term industrial temperature support.

Supply support for 71V35761S166PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions, now part of Renesas Electronics.

The 71V35761S166PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, communications, and real-time control applications.

FAQ

What is the maximum operating frequency supported by the 71V35761S166PFG?

The 71V35761S166PFG is rated for 166 MHz operation with a 3.5 ns clock-to-data access time (tCD) under industrial temperature conditions (–40°C to +85°C). This speed grade is confirmed in the AC Electrical Characteristics table (Rev. May 18, 2020), where tCD = 3.5 ns max at 166 MHz and VDD = 3.3 V ±5%. The device also supports 183 MHz (3.3 ns) and 200 MHz (3.1 ns) speeds in commercial temperature range.

Does the 71V35761S166PFG support both linear and interleaved burst modes?

Yes, the 71V35761S166PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear order (00→01→10→11); when HIGH, it follows interleaved order (00→01→11→10). This behavior is documented in Tables 14 and 15 of the datasheet and applies to all speed grades including the 71V35761S166PFG.

What package type is used for the 71V35761S166PFG?

The 71V35761S166PFG uses a 100-pin plastic thin quad flatpack (TQFP) per JEDEC standard, with 14 mm × 20 mm body size and 0.5 mm lead pitch. This is explicitly stated in the "Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP)" feature list and confirmed in Pin Configuration Drawing 5301 drw 02 (PKG100).

How does the 71V35761S166PFG handle power-down and sleep modes?

The 71V35761S166PFG supports two low-power states: CMOS standby (ISB1 = 30 mA) when deselected, and full sleep mode (IZZ = 30 mA) activated by driving ZZ HIGH. In sleep mode, the internal clock is gated and data retention is guaranteed. Recovery time (tZZR) is 100 ns minimum, and ZZ pulse width (tZZPW) must be ≥100 ns - all specified in Table 16 (AC Electrical Characteristics).

Is JTAG boundary scan available on the 71V35761S166PFG?

No, JTAG boundary scan is not available on the 71V35761S166PFG. The datasheet specifies JTAG as an optional feature for the "SA" version only (e.g., 71V35761SA), which uses BGA packages. The "S" suffix (as in 71V35761S166PFG) denotes the standard version without JTAG; pins TMS, TDI, TCK, TDO, and TRST are NC in TQFP packages and unused in this variant.