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Renesas 71V35761S166PFG8
- Part No.:
- 71V35761S166PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V35761S166PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,232
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Product details
Overview
71V35761S166PFG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features self-timed write with global/byte write control. Used in high-speed cache and memory subsystems for network processors and telecom baseband units.
For engineers reviewing the 71V35761S166PFG8 datasheet, 71V35761S166PFG8 pinout, 71V35761S166PFG8 application, or 71V35761S166PFG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep-mode current (30mA), TQFP-100 package compatibility, and industrial temperature support (–40°C to +85°C) for embedded infrastructure designs.
Technical Context
The 71V35761S166PFG8 implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on CLK rising edge. Its internal burst counter generates four sequential addresses per ADV assertion, with LBO selecting linear or interleaved sequences-critical for cache line fills in RISC-based systems.
Burst operation is synchronized to ADSP/ADSC status signals and controlled by ADV, while write cycles are managed via GW (global) or BWE/BW1–BW4 (byte-level) enables. The device supports asynchronous OE and ZZ inputs for output enable and full sleep mode, respectively, enabling low-power idle states without clock gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 36-bit wide data paths for high-throughput memory interfaces. |
| Max Clock Frequency | 166 MHz; enables 6 ns cycle time for sustained burst reads/writes in real-time packet buffering. |
| Access Time | 3.5 ns (tCD); defines minimum clock-to-output delay for first pipelined data word in burst sequence. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails allow independent noise management and signal integrity tuning. |
| Sleep Current (IZZ) | 30 mA (industrial temp); guarantees data retention during ZZ-active power-down, reducing system standby power. |
| Burst Mode Control | LBO pin selects linear or interleaved address sequence; determines cache line mapping behavior for processor coherency. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station RF modules and industrial controllers. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT 71V35761 PKG100 drawing (Rev. May 18, 2020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A1 drive burst counter LSBs; A2–A17 select base row/column in 128K × 36 array. |
| CLK | Clock Input | Primary timing reference; all synchronous registers (address, data, control) latch on rising edge. |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-initiated address latching; ADSP gated by CE, ADSC independent. |
| ADV | Burst Address Advance | Active-low signal advancing internal burst counter; HIGH suspends burst, enabling single-word access mid-sequence. |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE enables byte write logic; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) for partial writes. |
| OE | Output Enable | Asynchronous control of I/O drivers; LOW enables outputs regardless of clock state-critical for glueless interfacing. |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces current to 30 mA; retains memory contents without external refresh. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; I/OP1–I/OP4 are parity bits; all registered for synchronous read/write alignment. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data word appears one clock cycle after address load; subsequent words align to next three CLK edges-reducing latency in burst-sensitive applications like packet forwarding. |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle; eliminates bus contention during rapid context switching in multi-core SoC interconnects. |
| Self-Timed Write Cycle | Internal timing logic finalizes write completion without external strobes; simplifies timing closure for variable-latency memory controllers. |
| Linear/Interleaved Burst Order | LBO pin statically configures burst address sequence-enables optimization for specific cache line layouts (e.g., aligned vs. strided access patterns). |
| Low-Power Sleep Mode | IZZ = 30 mA at VDD = 3.465 V; maintains full data retention while cutting dynamic power >90% versus active mode-ideal for intermittent traffic scenarios. |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC controller and traffic manager ASICs. Use Value: 166MHz burst reads deliver 5.9 Gbps aggregate bandwidth (36-bit × 166MHz), matching 10GbE line rates without FIFO bottlenecks. | Use Scenario: Holding FFT coefficients and intermediate results in 4G/5G LTE eNodeB digital front-end processing chains. IC Role / Device Role / Timing Role: Synchronous memory backing DSP cores requiring deterministic 3.5ns access for real-time symbol processing. Use Value: Pipelined outputs and single-cycle deselect enable zero-wait-state operation with TI C66x or Arm Cortex-R5F-based baseband processors. |
| Industrial PLC Memory Expansion | Radar Signal Acquisition Buffer |
Use Scenario: Extending program/data memory for motion control firmware executing on dual-core ARM Cortex-A9 SoCs in factory automation controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic access to instruction cache tags and real-time task stacks. Use Value: –40°C to +85°C rating ensures reliable operation in uncooled control cabinets; ZZ sleep mode cuts standby power during idle scan cycles. | Use Scenario: Capturing high-resolution ADC samples from phased-array radar receivers prior to FPGA-based beamforming. IC Role / Device Role / Timing Role: Burst-capable SRAM acting as acquisition FIFO between 1GSPS ADCs and Xilinx Zynq Ultrascale+ processing subsystems. Use Value: Linear burst mode (LBO = LOW) matches sequential ADC sample ordering; 36-bit width accommodates 32-bit I/Q + 4-bit metadata per sample. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166AXC | 128K × 36, 3.3V, 166MHz, TQFP-100; no JTAG, no ZZ sleep, higher ISB1 (45mA) | Lacks hardware sleep mode; requires external power management for low-power states | Select when JTAG testability and ultra-low standby current are not required; verify OE timing compatibility. |
| AS7C3256B-166JCIN | 128K × 36, 3.3V, 166MHz, TQFP-100; no burst counter, no ADV/LBO, asynchronous OE only | No burst addressing-requires external logic for cache-line fills; simpler interface but lower peak bandwidth | Select for cost-sensitive designs where burst mode is unused and deterministic single-word latency suffices. |
Compared with CY7C1362BV33-166AXC and AS7C3256B-166JCIN, the 71V35761S166PFG8 uniquely delivers integrated burst sequencing, hardware sleep (IZZ = 30mA), and JTAG testability-making it optimal for infrastructure applications demanding both performance and power efficiency.
Availability
71V35761S166PFG8 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, industrial PLC memory expansion, and radar signal acquisition requiring stable component supply across extended product lifecycles.
Supply support for 71V35761S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing markets.
The 71V35761S166PFG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in networking, telecom, and industrial control equipment.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V35761S166PFG8?
The 71V35761S166PFG8 is rated for 166MHz operation with a guaranteed clock-to-data access time (tCD) of 3.5ns. This specification applies across the industrial temperature range (–40°C to +85°C) and at VDD/VDDQ = 3.3V ±5%. The device also supports faster 183MHz (3.3ns) and 200MHz (3.1ns) variants, but the 71V35761S166PFG8 is specifically characterized and screened for 166MHz performance.
Does the 71V35761S166PFG8 support JTAG boundary scan testing?
No, the 71V35761S166PFG8 does not include JTAG functionality. JTAG pins (TMS, TDI, TCK, TDO, TRST) are present only on the "SA" variant (e.g., 71V35761SA166PFG8). The "S" suffix in 71V35761S166PFG8 indicates the standard version without IEEE 1149.1 compliance; TRST, TMS, TDI, TCK, and TDO pins are NC in this part.
How does the LBO pin affect burst addressing behavior in the 71V35761S166PFG8?
The LBO pin selects between linear and interleaved burst sequences. When LBO = LOW, the device uses linear order (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation. The 71V35761S166PFG8 implements this using internal A0/A1 decoding, directly impacting cache line fill patterns in processor-facing applications.
What is the power consumption of the 71V35761S166PFG8 in full sleep mode (ZZ active)?
In full sleep mode with ZZ = HIGH, the 71V35761S166PFG8 draws 30mA (IZZ) at VDD = 3.465V and TA = +85°C. This current level guarantees full data retention without external refresh. The device exits sleep mode after tZZR = 100ns once ZZ returns LOW, and requires no additional configuration or reset sequence.
Can the 71V35761S166PFG8 be used with a 2.5V I/O interface?
No, the 71V35761S166PFG8 requires VDDQ = 3.3V ±5% for I/O operation and is not 2.5V-tolerant. VIH for I/O pins is specified as VDDQ +0.3V (max), and VIL as –0.3V (min). Connecting to a 2.5V system without level translation risks violating input voltage limits and may cause functional failure or reliability degradation.
71V35761S166PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V35761S166PFG8 FAQ
1.How can I place an order for 71V35761S166PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761S166PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761S166PFG8 reliable?
The price and inventory of 71V35761S166PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S166PFG8 is usually 5 days.
3.What payment methods are accepted for 71V35761S166PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761S166PFG8 transactions.
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4.How is shipping managed for 71V35761S166PFG8?
71V35761S166PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761S166PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761S166PFG8?
For technical support, including 71V35761S166PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S166PFG8 requirements.
6.How does Aetrix verify that 71V35761S166PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V35761S166PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S166PFG8 meets industry standards.
7.What is the process for return or replacement of 71V35761S166PFG8?
All 71V35761S166PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S166PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761S166PFG8 part is unused and in its original packaging.
Return procedure for 71V35761S166PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761S166PFG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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