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Renesas 71V35761S166PFGI8

Part No.:
71V35761S166PFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V35761S166PFGI8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,939

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Product details

Overview

71V35761S166PFGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features self-timed write with global/byte write control. Used in high-speed networking line cards for packet buffering.

For engineers reviewing the 71V35761S166PFGI8 datasheet, 71V35761S166PFGI8 pinout, 71V35761S166PFGI8 application, or 71V35761S166PFGI8 equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), TQFP-100 packaging, and JTAG boundary-scan capability for system-level testability.

Technical Context

The 71V35761S166PFGI8 implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive 36-bit words per address, with sequence order determined by LBO state and ADV signal.

It supports three write modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 selects, and asynchronous sleep mode via ZZ input. The device includes dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O) and optional IEEE 1149.1 JTAG interface for boundary scan (SA version only).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.608 Mbit), enabling 36-bit wide data paths for RISC processors and network ASICs
Clock Frequency166 MHz max - defines maximum sustained read/write throughput of 594 MB/s (36-bit × 166M cycles/s)
Access Time3.5 ns clock-to-data (tCD) - determines minimum latency for first word in pipelined burst reads
Supply VoltagesVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate low-noise 3.3V supplies for core logic and I/O drivers
Operating Temperature–40°C to +85°C - qualified for industrial-grade embedded systems including telecom infrastructure
Power ConsumptionIDD = 320 mA (166 MHz, industrial), ISB2 = 110 mA (clock running standby), IZZ = 30 mA (full sleep) - enables dynamic power management in burst-idle intervals
Burst ModeLinear or interleaved via LBO pin - matches cache line ordering requirements of specific CPU or DMA controllers

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT 71V35761 PKG100 drawing (May 2020 rev).

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous 18-bit address bus; A0–A16 used for 128K addressing, A17 reserved for future expansion or test
CLKClock InputSingle-ended system clock reference; all synchronous operations edge-triggered on rising edge
CE, CS0, CS1Chip Enable / SelectsThree-level chip select hierarchy (CE active-low, CS0 active-high, CS1 active-low) for multi-SRAM memory mapping
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit writes; BWE gates BWx signals; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.)
ADV, ADSP, ADSCBurst Address ControlADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously
LBOBurst Order SelectAsynchronous static input: LBO = LOW → linear burst (0,1,2,3); LBO = HIGH → interleaved (0,2,1,3)
ZZSleep Mode InputAsynchronous high-active signal that gates internal clock and reduces current to 30 mA while retaining data
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus: 32 data bits + 4 parity bits; all registered for synchronous timing closure
VDD, VDDQ, VSSPower/GroundDual supply: VDD powers core logic, VDDQ powers I/O buffers - allows independent noise isolation and voltage margining

Key Features

FeatureDesign Value
Pipelined Output ArchitectureFirst output word appears one clock cycle after address latch; enables continuous burst streaming without inter-cycle gaps
Single-Cycle DeselectChip deactivates within one CLK cycle upon CE/CS transition - eliminates bus contention during rapid memory bank switching
Self-Timed Write CycleInternal timing logic resolves write completion without external wait-state generation - simplifies controller design
JTAG Boundary Scan (SA version)IEEE 1149.1-compliant test interface on dedicated pins (TMS/TDI/TCK/TDO/TRST) - supports board-level interconnect testing
Industrial Temperature Range–40°C to +85°C operation with guaranteed AC/DC specs - suitable for uncooled base station and router deployments

Applications

Network Packet BufferingHigh-Performance Computing Cache

Use Scenario: Storing ingress/egress packets in Layer 3 switches with deep buffer requirements.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as 36-bit-wide, low-latency packet memory with burst-aligned read/write for DMA engines.

Use Value: 166 MHz operation delivers 594 MB/s bandwidth; pipelined outputs reduce packet processing latency by one clock cycle per burst.

Use Scenario: Second-level cache for multi-core DSPs in radar signal processing systems.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly to processor's 36-bit external memory bus with single-cycle deselect.

Use Value: Linear burst mode matches DSP cache line fetch patterns; industrial temp rating ensures reliability in airborne avionics enclosures.

Telecom Line Card MemoryTest Equipment Pattern Memory

Use Scenario: Frame buffering in OC-192 SONET framer modules requiring deterministic access timing.

IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free, clock-aligned data storage for serial-to-parallel conversion pipelines.

Use Value: 3.5 ns tCD and 0.5 ns setup/hold margins meet SONET stratum-3 timing budgets; TQFP-100 eases high-density PCB routing.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-speed memory holding multi-gigabit test sequences with precise clock-aligned readout.

Use Value: ZZ sleep mode cuts power during vector idle periods; JTAG scan enables in-system verification of memory integrity pre-test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1362BV33-166AXC128K × 36, 166 MHz, 3.3V, but uses different burst control (MODE pin instead of LBO) and lacks JTAGNo IEEE 1149.1 support; requires redesign of burst configuration logic and test strategySelect when JTAG is unnecessary and legacy Cypress toolchain compatibility is required
AS7C312836B-166BINSame 128K × 36 organization and 166 MHz speed, but uses single VDD supply (no VDDQ separation) and has no ZZ sleep modeHigher I/O noise coupling risk; no low-power sleep state for intermittent operationSelect for cost-sensitive industrial controls where power gating is not required and layout simplicity is prioritized

Compared with CY7C1362BV33-166AXC and AS7C312836B-166BIN, the 71V35761S166PFGI8 uniquely combines industrial temperature support, dual-supply isolation (VDD/VDDQ), hardware-selectable burst order (LBO), and optional JTAG - making it optimal for telecom and defense applications demanding testability and thermal robustness.

Availability

71V35761S166PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-performance computing cache, and test equipment pattern memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.

The 71V35761 family was designed for high-bandwidth, low-latency memory subsystems in networking, telecommunications, and military/aerospace systems requiring deterministic burst access and industrial-grade reliability.

FAQ

What is the maximum operating frequency of the 71V35761S166PFGI8?

The 71V35761S166PFGI8 is rated for 166 MHz operation under industrial temperature conditions (–40°C to +85°C), delivering a 3.5 ns clock-to-data access time (tCD). This frequency is guaranteed across full voltage (3.3 V ±5%) and temperature range, with timing parameters validated per IDT's May 2020 datasheet revision.

Does the 71V35761S166PFGI8 support JTAG boundary scan?

The 71V35761S166PFGI8 does not include JTAG boundary scan. That feature is exclusive to the "SA" variant (e.g., 71V35761SA166PFGI8). The "S" suffix indicates the standard version with TMS/TDI/TCK/TDO pins configured as NC (no-connect) in the TQFP-100 package, as confirmed in IDT's pin configuration diagrams.

How does the LBO pin affect burst behavior in the 71V35761S166PFGI8?

The LBO (Linear/Interleaved Burst Order) pin on the 71V35761S166PFGI8 selects burst address sequencing: when pulled LOW, it enables linear order (0,1,2,3); when HIGH, it enables interleaved order (0,2,1,3). LBO is asynchronous and static - it must remain stable during burst operation, as changing it mid-burst causes undefined address generation.

What power supply configuration is required for the 71V35761S166PFGI8?

The 71V35761S166PFGI8 requires two independent 3.3 V supplies: VDD (core logic, pins 11, 22, 46, 60, 75, 89) and VDDQ (I/O buffers, pins 32, 47, 52, 57, 67, 72, 77, 82, 87, 92). Both must be regulated to 3.3 V ±5% and decoupled per IDT's layout guidelines to prevent timing violations due to I/O switching noise.

Can the 71V35761S166PFGI8 operate in low-power mode, and how is it controlled?

Yes, the 71V35761S166PFGI8 supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, internal clock gating reduces supply current to 30 mA (IZZ) while maintaining full data retention. Recovery time (tZZR) is 100 ns, and ZZ pulse width (tZZPW) must exceed 100 ns to ensure reliable entry - both specified in the AC characteristics table.

71V35761S166PFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V35761S166PFGI8 FAQ

1.How can I place an order for 71V35761S166PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V35761S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V35761S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S166PFGI8 is usually 5 days.

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71V35761S166PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V35761S166PFGI8?

For technical support, including 71V35761S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S166PFGI8 requirements.

6.How does Aetrix verify that 71V35761S166PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V35761S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S166PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V35761S166PFGI8?

All 71V35761S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S166PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V35761S166PFGI8 part is unused and in its original packaging.

Return procedure for 71V35761S166PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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