Renesas 71V35761S183PFG
- Part No.:
- 71V35761S183PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V35761S183PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V35761S183PFG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 183MHz operation (3.3ns clock access time), operates across industrial temperature range (–40°C to +85°C), and features JTAG boundary scan (IEEE 1149.1) for testability. Used in high-speed networking line cards and packet buffer subsystems requiring deterministic low-latency memory access.
For engineers reviewing the 71V35761S183PFG datasheet, 71V35761S183PFG pinout, 71V35761S183PFG application, or 71V35761S183PFG equivalent, key selection criteria include burst mode configuration (LBO), sleep mode control (ZZ), byte-write granularity (BW1–BW4), and compatibility with 3.3V I/O systems requiring pipelined read timing and self-timed write cycles.
Technical Context
The 71V35761S183PFG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four consecutive addresses from a single input, supporting both linear and interleaved sequences selected by the LBO pin. Pipelined output registers deliver first data on the second clock edge after address assertion.
Write operations are fully synchronous and support global (GW) or byte-selectable (BWE + BW1–BW4) modes, with self-timed internal write completion. Sleep mode is activated asynchronously via ZZ, gating the internal clock and reducing supply current to ≤35mA while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; provides 36-bit wide data bus interface for high-throughput buffering. |
| Max Clock Frequency | 183 MHz; enables 5.5 ns clock cycle time - critical for real-time packet processing in telecom infrastructure. |
| Access Time | 3.3 ns (tCD); defines minimum latency from CLK rising edge to valid output data under industrial conditions. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); ensures compatibility with standard 3.3V logic families without level shifting. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base stations, routers, and industrial controllers. |
| Power Consumption | ISB2 = 120 mA (183 MHz standby), IZZ = 30–35 mA (full sleep); enables dynamic power management in thermally constrained systems. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - directly impacts cache line alignment and DMA efficiency. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT 71V35761 PKG100 drawing (Rev. May 18, 2020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A17 provide full 128K address space (217 = 131,072 words). |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising CLK. |
| ADV | Burst Address Advance | Active-low synchronous signal that increments internal burst counter; held HIGH to suspend burst sequence. |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte enables; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) - enables precise data masking. |
| OE | Output Enable | Asynchronous control: LOW enables I/O drivers; HIGH places outputs in high-impedance - allows bus sharing without external transceivers. |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode, disabling internal clock and reducing IDD to ≤35 mA while preserving data. |
| LBO | Burst Order Select | Static asynchronous input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) - affects memory controller address mapping. |
| TMS/TDI/TCK/TRST/TDO | JTAG Boundary Scan | IEEE 1149.1-compliant test interface; TRST optional; supports production testing and in-system verification of PCB interconnects. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First output data appears on second CLK edge after address load - reduces effective read latency in multi-cycle pipelines. |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle - eliminates bus contention during rapid context switching in multi-port systems. |
| Configurable Burst Sequence | LBO pin selects linear or interleaved 4-word burst order - aligns with processor cache line policies (e.g., Pentium vs. PowerPC). |
| Self-Timed Write Cycle | Internal write completion detection eliminates need for external write acknowledge timing - simplifies controller logic and improves reliability. |
| Industrial Temperature Support | Guaranteed operation from –40°C to +85°C with full AC/DC specs - suitable for uncontrolled environments like outdoor wireless base stations. |
| JTAG Boundary Scan (IEEE 1149.1) | Full scan chain for interconnect test and debug - reduces manufacturing test cost and accelerates board-level failure analysis. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade switches and routers before classification or forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port buffer with burst reads aligned to 32-byte cache lines. Use Value: 183MHz clock rate and pipelined outputs sustain >6.5 Gbps sustained throughput (36 bits × 183 MHz), meeting OC-192 line-rate buffering needs. |
Use Scenario: Frame assembly/disassembly (FAD) and ATM cell buffering in DSLAMs and optical line terminals. IC Role / Device Role / Timing Role: Synchronous SRAM acting as shared memory between ingress/egress ASICs with deterministic access timing. Use Value: Single-cycle deselect and burst counter enable seamless handoff between traffic managers without pipeline stalls or arbitration overhead. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
|
Use Scenario: Capturing sensor data streams at kHz rates in programmable logic controllers for predictive maintenance analytics. IC Role / Device Role / Timing Role: Local high-speed scratchpad memory interfaced to FPGA-based acquisition engines. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode allow reliable operation in factory-floor enclosures with passive cooling only. |
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to tester clock for sub-nanosecond timing margins. Use Value: 3.3ns access time and tight AC specs (tCD, tOHZ) ensure setup/hold compliance at 183MHz, enabling <100 ps timing resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375DV18-167BZI | 128K × 36, 167MHz max, no JTAG, 165-ball fBGA only | Lacks IEEE 1149.1 test interface; requires different PCB layout and test strategy | Choose when JTAG is unnecessary and fine-pitch BGA is acceptable for higher density. |
| AS7C33128PFSIG | 128K × 36, 166MHz max, commercial temp only (0°C to +70°C), TQFP-100 | Not rated for industrial temperature; lacks ZZ sleep and LBO burst control | Acceptable for cost-sensitive, non-ruggedized applications where thermal margin is guaranteed. |
Compared with CY7C1375DV18-167BZI and AS7C33128PFSIG, the 71V35761S183PFG uniquely combines industrial temperature support, JTAG testability, and configurable burst ordering - making it optimal for carrier-class infrastructure where field reliability and test coverage are mandatory.
Availability
71V35761S183PFG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761S183PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V35761S183PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency buffering in telecom infrastructure, enterprise networking, and industrial control systems demanding industrial-grade reliability.
FAQ
What is the maximum operating frequency of the 71V35761S183PFG?
The 71V35761S183PFG is rated for 183 MHz operation with a 3.3 ns clock-to-data access time (tCD) under industrial temperature conditions (–40°C to +85°C). This speed grade is confirmed in the device's ordering part number suffix "183" and validated in Table 16 of the official IDT datasheet (Rev. May 18, 2020).
Does the 71V35761S183PFG support JTAG boundary scan?
Yes, the 71V35761S183PFG includes an optional IEEE 1149.1-compliant JTAG boundary scan interface with TMS, TDI, TCK, TDO, and TRST pins. This feature is present in the TQFP-100 package and supports interconnect testing and in-system debugging per the functional description in Section 1 of the datasheet.
How does the LBO pin affect burst behavior in the 71V35761S183PFG?
The LBO (Linear/Interleaved Burst Order) pin selects the 4-word burst address sequence: LOW configures linear order (00→01→10→11), HIGH selects interleaved (00→01→11→10). As stated in Tables 14 and 15, this static input must remain stable during operation and directly determines how the internal burst counter advances A0/A1 for sequential reads/writes.
What is the function of the ZZ pin on the 71V35761S183PFG?
The ZZ pin is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤35 mA (IZZ) while guaranteeing data retention. Per Table 9 and Figure 12, recovery requires tZZR ≥ 100 ns after ZZ returns LOW before normal operation resumes.
Can the 71V35761S183PFG perform byte-wide writes?
Yes, the 71V35761S183PFG supports granular byte writes using BWE (byte write enable) and BW1–BW4 (individual byte write selects). As defined in Table 12, BW1 controls I/O0–7 + I/OP1 (9 bits), BW2 controls I/O8–15 + I/OP2, etc., enabling independent 9-bit writes without affecting other bytes in the 36-bit word.
71V35761S183PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V35761S183PFG FAQ
1.How can I place an order for 71V35761S183PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761S183PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761S183PFG reliable?
The price and inventory of 71V35761S183PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S183PFG is usually 5 days.
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5.How can I obtain technical support or documentation for 71V35761S183PFG?
For technical support, including 71V35761S183PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S183PFG requirements.
6.How does Aetrix verify that 71V35761S183PFG is sourced from the original manufacturer or authorized distributors?
All 71V35761S183PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S183PFG meets industry standards.
7.What is the process for return or replacement of 71V35761S183PFG?
All 71V35761S183PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S183PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761S183PFG part is unused and in its original packaging.
Return procedure for 71V35761S183PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761S183PFG Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
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