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Renesas 71V35761S183PFG8
- Part No.:
- 71V35761S183PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V35761S183PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,016
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Product details
Overview
71V35761S183PFG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 183MHz operation (3.3ns clock access time), operates over –40°C to +85°C, and features linear/interleaved burst mode via LBO input. Used in high-speed networking buffers and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V35761S183PFG8 datasheet, 71V35761S183PFG8 pinout, 71V35761S183PFG8 application, or 71V35761S183PFG8 equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep-mode current (30–35mA), TQFP-100 package compatibility, and industrial temperature support for telecom infrastructure designs.
Technical Context
The 71V35761S183PFG8 implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on CLK rising edge. Its internal burst counter generates four sequential addresses per ADV assertion, with output data pipelined one cycle after clock edge.
Burst order is selected statically via LBO (LOW = linear, HIGH = interleaved); write operations support global (GW) or byte-level (BW1–BW4 + BWE) control with self-timed write completion. Sleep mode is entered asynchronously via ZZ HIGH, gating CLK and reducing supply current to ≤35mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data path for wide-bus systems. |
| Max Clock Frequency | 183 MHz; enables 5.48 ns minimum clock cycle time for real-time packet buffering. |
| Access Time | 3.3 ns at 183 MHz; defines worst-case delay from CLK edge to valid output data under industrial conditions. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails allow noise isolation in mixed-signal environments. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station and router chassis. |
| Sleep Current (IZZ) | ≤35 mA at VDD = max; ensures low-power idle state during traffic lulls without data loss. |
| Burst Mode Control | LBO pin selects linear or interleaved address sequence; critical for cache line alignment with CPU or DMA controllers. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; pins NC (no connect) are electrically unconnected and may be left floating or tied to VSS/VDD per layout requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A1 drive burst counter LSBs; full range selects 128K locations. |
| CLK | Clock Input | Primary timing reference; all registers sample on rising edge; no internal PLL-requires clean, low-jitter source. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip memory expansion. |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HOLD = HIGH suspends burst sequence. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE enables byte-write logic; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.). |
| OE | Output Enable | Asynchronous control: LOW enables I/O drivers; HIGH forces high-Z-used for bus sharing without clock dependency. |
| ZZ | Sleep Mode Input | Asynchronous HIGH entry to full sleep; gates CLK internally; retains data with IZZ ≤35 mA at VDD max. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered inputs/outputs synchronized to CLK; I/OP pins are parity bits for ECC-capable systems. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core; VDDQ = 3.3V I/O; separate supplies reduce switching noise coupling into logic core. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | Outputs register data one clock cycle after address latch, enabling predictable 3.3ns access at 183MHz without wait states. |
| Single-Cycle Deselect | Device enters high-Z output state within one CLK cycle of CE/CS deassertion-critical for hot-swappable memory modules. |
| Configurable Burst Order (LBO) | Hardware-selectable linear or interleaved addressing matches CPU cache line mapping requirements without firmware overhead. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; GW or BWx assertion triggers automatic write completion detection. |
| Industrial Temperature Support | Rated for –40°C to +85°C operation with guaranteed parameters-validated for outdoor wireless infrastructure and industrial PLCs. |
Applications
| Networking Packet Buffer | Baseband Processor Cache |
|---|---|
Use Scenario: Stores ingress/egress Ethernet frames in Layer 2 switches with line-rate throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller and switch fabric ASIC. Use Value: 183MHz burst reads deliver 4×36-bit words per address cycle, sustaining 2.6 Gbps aggregate bandwidth for 10Gbps switch ports. | Use Scenario: Implements L2 cache for multicore DSPs in 5G NR baseband units. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing deterministic 3.3ns access to cached FFT and channel estimation data. Use Value: Linear burst mode aligns with 128-byte cache lines; single-cycle deselect prevents bus contention during context switches. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
Use Scenario: Captures sensor timestamps and analog readings in ruggedized automation controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM acting as circular buffer for time-series data acquisition. Use Value: ZZ sleep mode reduces power to ≤35mA during idle intervals while retaining log integrity across thermal cycles. | Use Scenario: Buffers ADC samples between radar front-end and FPGA-based beamforming engine. IC Role / Device Role / Timing Role: Wide-data-path FIFO with pipelined outputs synchronizing to FPGA clock domain. Use Value: 36-bit I/O width matches 12-bit I/Q × 3-channel digitizer; burst counter simplifies address generation in hardware state machines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167BAXI | 128K × 36, 167MHz max, 3.3V, TQFP-100; no JTAG; lower IZZ (25mA) but no ZZ pin. | Requires external sleep control logic; lacks hardware burst-order selection (LBO). | Prefer when lowest standby power is critical and burst mode is fixed in system firmware. |
| AS7C3256P-15TIN | 128K × 32, 15ns async access, 3.3V, TQFP-100; asynchronous interface, no burst counter or pipelining. | No clocked timing-unsuitable for high-speed burst transfers; limited to ≤66MHz effective throughput. | Select only for legacy designs where synchronous timing constraints do not apply. |
Compared with CY7C1362BV33-167BAXI and AS7C3256P-15TIN, the 71V35761S183PFG8 uniquely delivers 183MHz burst performance with hardware-configurable linear/interleaved addressing and integrated ZZ sleep control-enabling higher throughput and simpler power management in new telecom and industrial designs.
Availability
71V35761S183PFG8 is available at Aetrix Electronics and suitable for networking packet buffers, baseband processor caches, and industrial PLC data logs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761S183PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V35761 family was designed for high-speed, low-latency data buffering in telecom infrastructure and real-time embedded systems-emphasizing burst efficiency, industrial reliability, and power-aware operation.
FAQ
What is the maximum operating frequency supported by the 71V35761S183PFG8?
The 71V35761S183PFG8 is rated for 183MHz operation with 3.3ns clock access time under industrial temperature conditions (–40°C to +85°C). This speed is guaranteed with VDD and VDDQ at 3.3V ±5% and meets all AC timing parameters in the official IDT datasheet revision May.18.20. The 71V35761S183PFG8 does not support 200MHz operation-that rating applies only to commercial-grade variants.
Does the 71V35761S183PFG8 include JTAG boundary scan capability?
No, the 71V35761S183PFG8 does not include JTAG. JTAG (TMS, TDI, TCK, TDO, TRST) is exclusive to the "SA" variant (e.g., 71V35761SA). The "S" suffix in 71V35761S183PFG8 denotes the standard version without IEEE 1149.1 test interface-confirmed by pin configuration diagrams showing NC on TMS/TDI/TCK/TDO/TRST positions in TQFP-100.
How does the LBO pin affect burst addressing behavior in the 71V35761S183PFG8?
The LBO pin selects burst address sequence: LOW enables linear order (00→01→10→11), HIGH enables interleaved order (00→01→11→10). This setting must remain static during operation. The 71V35761S183PFG8 uses A0/A1 to generate the four-word burst, and LBO determines the stepping pattern-critical for matching CPU cache line layouts in baseband or networking applications.
What is the function of the ZZ pin on the 71V35761S183PFG8?
The ZZ pin provides asynchronous entry into full sleep mode: driving ZZ HIGH gates the internal CLK and reduces supply current to ≤35mA while retaining memory contents. The 71V35761S183PFG8 specifies tZZPW ≥100ns and tZZR ≥100ns for reliable wake-up. ZZ has an internal pull-down, so it defaults to active mode if left unconnected.
Which package type is used by the 71V35761S183PFG8?
The 71V35761S183PFG8 uses a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-147AA, with 14 mm × 20 mm body size and 0.5 mm lead pitch. The "PFG8" suffix explicitly denotes this TQFP-100 industrial-grade packaging, confirmed in IDT's ordering information and mechanical drawings.
71V35761S183PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V35761S183PFG8 FAQ
1.How can I place an order for 71V35761S183PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761S183PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761S183PFG8 reliable?
The price and inventory of 71V35761S183PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S183PFG8 is usually 5 days.
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Once your 71V35761S183PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761S183PFG8?
For technical support, including 71V35761S183PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S183PFG8 requirements.
6.How does Aetrix verify that 71V35761S183PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V35761S183PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S183PFG8 meets industry standards.
7.What is the process for return or replacement of 71V35761S183PFG8?
All 71V35761S183PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S183PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761S183PFG8 part is unused and in its original packaging.
Return procedure for 71V35761S183PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761S183PFG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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