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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V35761S183PFGI

Name: 71V35761S183PFGI
Brand: Renesas
SKU: 71V35761S183PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V35761S183PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V35761S183PFGI.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V35761S183PFGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features asynchronous sleep mode (ZZ) and optional IEEE 1149.1 JTAG boundary scan. Used in high-speed networking and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V35761S183PFGI datasheet, 71V35761S183PFGI pinout, 71V35761S183PFGI application, or 71V35761S183PFGI equivalent, key selection criteria include burst timing compliance, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), TQFP-100 package compatibility, and self-timed write control with byte-level granularity.

Technical Context

The 71V35761S183PFGI implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter advances on ADV low, generating four consecutive 36-bit words per initial address-enabling high-bandwidth transfers without external address sequencing.

It supports dual write control schemes: global write (GW) for full-word writes and byte-write enables (BWE + BW1–BW4) for 9-bit sub-word updates. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with pipelined output registers delivering data one clock cycle after the rising CLK edge.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.608 Mbit); provides 36-bit parallel data path for wide-bus systems like RISC CPU caches or packet buffer interfaces.
Clock Frequency / Access Time	183 MHz / 3.3 ns; guarantees deterministic read latency under industrial temperature (–40°C to +85°C) with synchronous timing referenced to CLK rising edge.
Burst Mode	Linear or interleaved 4-word burst controlled by static LBO pin; eliminates external burst address generation logic and reduces bus arbitration overhead.
Power Management	Asynchronous ZZ input enables full sleep mode (IZZ ≤ 35 mA); retains data while reducing dynamic and leakage current during idle cycles.
Write Control	Self-timed write with GW (full 36-bit) or BWE + BW1–BW4 (four independent 9-bit bytes); allows selective memory updates without disabling outputs or violating tOHZ timing.
I/O Voltage	3.3V I/O (VDDQ = 3.3V ±5%); compatible with LVTTL and LVCMOS interfaces; VIH min = 2.0 V, VIL max = 0.8 V ensures noise margin in noisy board environments.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with standard reflow profiles and optical inspection.

Pinout & Package

71V35761S183PFGI is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145, 14 mm × 20 mm body size, 0.5 mm lead pitch. Pin 1 marked by top-side dot; pins arranged in clockwise order starting from top-left corner.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP or ADSC is active low; A0–A16 select 128K locations, A17 unused in 128K×36 config.
CLK	System Clock Input	Primary timing reference; all synchronous operations (address latch, burst advance, data register update) occur on rising edge.
ADSP / ADSC	Address Status Inputs	ADSP (processor) and ADSC (cache controller) are active-low synchronous signals that trigger address register load; ADSP gated by CE.
ADV	Burst Address Advance	Active-low synchronous signal controlling burst counter increment; held high to suspend burst and repeat same address for extended writes.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte write mode; BW1–BW4 individually enable 9-bit bytes (I/O0–7+I/OP1, etc.)-supports partial-word updates.
OE	Output Enable	Asynchronous control; drives I/O pins to high-Z when high, enabling bus sharing; does not affect internal pipeline or timing.
ZZ	Sleep Mode Input	Asynchronous high-active signal gating internal clock and reducing supply current to ≤35 mA; retains memory contents across sleep entry/exit.
LBO	Burst Order Select	Static asynchronous input selecting linear (LBO low) or interleaved (LBO high) burst sequence; must remain stable during operation.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus; registered input and output paths ensure setup/hold compliance at 183 MHz; I/OPx are parity bits.
VDD / VDDQ / VSS	Power Supplies	VDD = 3.3V ±5% core supply; VDDQ = 3.3V ±5% I/O supply; separate planes required to minimize switching noise coupling into core logic.

Key Features

Feature	Design Value
Pipelined Outputs	Output data registered on CLK rising edge with 3.3 ns tCD; decouples read latency from PCB trace delays and enables reliable timing closure at 183 MHz.
Single-Cycle Deselect	Chip deactivation (via CE/CS0/CS1) completes within one clock cycle; prevents bus contention and eliminates need for external deselect delay logic.
Self-Timed Write Cycle	Internal write timing determined by GW/BWE/BWx sampling at CLK edge-no external write pulse width constraints; simplifies controller design.
Industrial Temperature Range	Rated for –40°C to +85°C operation with guaranteed 183 MHz performance and IZZ ≤ 35 mA in sleep mode; suitable for base station and industrial PLC applications.
JTAG Boundary Scan (Optional)	IEEE 1149.1-compliant test interface available in BGA variants; not present in TQFP-100 71V35761S183PFGI-pinout excludes TMS/TDI/TCK/TDO/TRST.

Applications

Network Packet Buffer	CPU Cache Tag RAM
Use Scenario: High-throughput line cards buffering variable-length Ethernet frames before classification and forwarding. IC Role / Device Role / Timing Role: 36-bit-wide synchronous SRAM serving as first-level packet descriptor store; burst reads supply four descriptors per clock cycle to match DMA engine bandwidth. Use Value: Pipelined outputs and 3.3 ns access enable sustained 183 MT/s throughput; single-cycle deselect prevents descriptor corruption during rapid queue switching.	Use Scenario: Secondary cache tag storage in multi-core RISC processors requiring fast tag comparison and replacement decisions. IC Role / Device Role / Timing Role: Tag RAM holding 128K cache line identifiers; linear burst mode delivers four adjacent tags per lookup to support speculative prefetching. Use Value: 183 MHz operation meets sub-6 ns tag access budget; separate VDD/VDDQ rails isolate core logic noise from comparator inputs.
Baseband Signal Processor Memory	Industrial Motion Controller FIFO
Use Scenario: Real-time LTE/5G baseband processing where FFT buffers require low-latency, deterministic memory access. IC Role / Device Role / Timing Role: Synchronous SRAM providing scratchpad memory for FFT twiddle factor tables and intermediate results; burst writes stream coefficients from DSP core. Use Value: Self-timed write with byte enables allows partial coefficient updates without stalling the pipeline; ZZ sleep mode reduces power between frame bursts.	Use Scenario: Closed-loop servo drive managing position feedback and PWM command queues in CNC machines. IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via burst reads/writes; ADV-controlled burst suspension synchronizes with encoder zero-crossing events. Use Value: Industrial temp rating ensures reliability in motor-adjacent enclosures; 3.3V I/O matches FPGA I/O banks driving isolated gate drivers.

Network Packet Buffer

CPU Cache Tag RAM

Use Scenario: High-throughput line cards buffering variable-length Ethernet frames before classification and forwarding.

IC Role / Device Role / Timing Role: 36-bit-wide synchronous SRAM serving as first-level packet descriptor store; burst reads supply four descriptors per clock cycle to match DMA engine bandwidth.

Use Value: Pipelined outputs and 3.3 ns access enable sustained 183 MT/s throughput; single-cycle deselect prevents descriptor corruption during rapid queue switching.

Use Scenario: Secondary cache tag storage in multi-core RISC processors requiring fast tag comparison and replacement decisions.

IC Role / Device Role / Timing Role: Tag RAM holding 128K cache line identifiers; linear burst mode delivers four adjacent tags per lookup to support speculative prefetching.

Use Value: 183 MHz operation meets sub-6 ns tag access budget; separate VDD/VDDQ rails isolate core logic noise from comparator inputs.

Baseband Signal Processor Memory

Industrial Motion Controller FIFO

Use Scenario: Real-time LTE/5G baseband processing where FFT buffers require low-latency, deterministic memory access.

IC Role / Device Role / Timing Role: Synchronous SRAM providing scratchpad memory for FFT twiddle factor tables and intermediate results; burst writes stream coefficients from DSP core.

Use Value: Self-timed write with byte enables allows partial coefficient updates without stalling the pipeline; ZZ sleep mode reduces power between frame bursts.

Use Scenario: Closed-loop servo drive managing position feedback and PWM command queues in CNC machines.

IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via burst reads/writes; ADV-controlled burst suspension synchronizes with encoder zero-crossing events.

Use Value: Industrial temp rating ensures reliability in motor-adjacent enclosures; 3.3V I/O matches FPGA I/O banks driving isolated gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-183AXC	128K × 36-bit, 183 MHz, 3.3V, TQFP-100-but lacks LBO-selectable burst order and has no ZZ sleep mode.	Requires external burst address generation logic; unsuitable for low-power intermittent operation.	Select only if burst sequence is fixed and sleep mode is unnecessary; verify ADV timing compatibility with existing controller.
AS7C33128PFSI-183	128K × 36-bit, 183 MHz, 3.3V, TQFP-100-with pipelined outputs and single-cycle deselect, but no JTAG option and higher ISB1 (45 mA vs. 35 mA).	Higher standby current limits battery-backed or energy-constrained deployments; identical burst functionality.	Prefer for cost-sensitive industrial designs where JTAG is unused and 10 mA higher standby is acceptable.

Compared with CY7C1362BV33-183AXC and AS7C33128PFSI-183, the 71V35761S183PFGI uniquely combines LBO-configurable burst ordering, asynchronous ZZ sleep, and industrial-grade 183 MHz timing in a single TQFP-100 package-enabling both performance and power flexibility in embedded real-time systems.

Availability

71V35761S183PFGI is available at Aetrix Electronics and suitable for network packet buffering, CPU cache subsystems, baseband signal processing, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for 71V35761S183PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V35761S183PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking infrastructure and real-time embedded controllers.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761S183PFGI?

The 71V35761S183PFGI is rated for 183 MHz operation with a guaranteed clock access time of 3.3 ns across the industrial temperature range (–40°C to +85°C). This specification is validated under VDD = VDDQ = 3.3V ±5%, and includes timing margins for setup/hold compliance at the rated frequency. The "183" in the part number explicitly denotes this speed grade.

Does the 71V35761S183PFGI support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V35761S183PFGI supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven low, linear addressing is used; when high, interleaved addressing is selected. LBO is an asynchronous static input and must remain stable during device operation-changing it mid-burst may cause undefined address sequencing in the 71V35761S183PFGI.

What power-saving features does the 71V35761S183PFGI offer, and how is sleep mode activated?

The 71V35761S183PFGI provides asynchronous sleep mode via the ZZ pin: asserting ZZ high gates the internal clock and reduces supply current to ≤35 mA while retaining memory contents. Sleep mode recovery requires tZZR ≥ 100 ns after ZZ returns low. This feature is fully supported in the 71V35761S183PFGI's industrial temperature grade and requires no external configuration.

Is JTAG boundary scan available on the 71V35761S183PFGI in the TQFP-100 package?

No, JTAG boundary scan (IEEE 1149.1) is not available on the 71V35761S183PFGI TQFP-100 variant. The JTAG signals (TMS, TDI, TCK, TDO, TRST) are reserved for the "SA" suffix BGA versions only. The 71V35761S183PFGI pinout omits these pins entirely-TRST, TMS, TDI, TCK, and TDO are NC (no-connect) in this package.

How does the 71V35761S183PFGI handle byte-level writes, and what is the role of BWE and BW1–BW4?

The 71V35761S183PFGI supports byte-level writes using BWE (byte write enable) and BW1–BW4 (individual byte write selects). When BWE is low, BW1–BW4 determine which of four 9-bit bytes (I/O0–7+I/OP1, etc.) are written; when BWE is high, only GW can initiate a write. This allows precise 9-bit updates without disturbing other bytes in the 36-bit word-critical for tag RAM or descriptor table maintenance in the 71V35761S183PFGI.

71V35761S183PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 183 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.3 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V35761S183PFGI FAQ

1.How can I place an order for 71V35761S183PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V35761S183PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V35761S183PFGI reliable?

The price and inventory of 71V35761S183PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S183PFGI is usually 5 days.

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Once your 71V35761S183PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V35761S183PFGI?

For technical support, including 71V35761S183PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S183PFGI requirements.

6.How does Aetrix verify that 71V35761S183PFGI is sourced from the original manufacturer or authorized distributors?

All 71V35761S183PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S183PFGI meets industry standards.

7.What is the process for return or replacement of 71V35761S183PFGI?

All 71V35761S183PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S183PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V35761S183PFGI part is unused and in its original packaging.

Return procedure for 71V35761S183PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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