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Renesas 71V35761S200PFG
- Part No.:
- 71V35761S200PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V35761S200PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,495
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Product details
Overview
71V35761S200PFG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It delivers 200MHz operation (3.1ns clock access), supports linear/interleaved burst modes via LBO input, and features global/byte write control, JTAG boundary scan (IEEE 1149.1), and ZZ-controlled sleep mode. Used in high-speed networking and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V35761S200PFG datasheet, 71V35761S200PFG pinout, 71V35761S200PFG application, or 71V35761S200PFG equivalent, key selection criteria include burst timing compliance, 3.3V I/O voltage tolerance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and JTAG testability for system-level validation.
Technical Context
The 71V35761S200PFG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive 36-bit words per address, with sequence order determined by LBO state and ADV signal behavior.
It supports three write modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls, and self-timed write cycles. Power management includes active standby (ISB1), clock-running standby (ISB2), and full sleep (IZZ) states, all controlled asynchronously via ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), supporting 36-bit parallel data path |
| Max Clock Frequency | 200 MHz - enables 5 ns clock cycle time for high-throughput memory access |
| Access Time | 3.1 ns - guaranteed clock-to-data valid delay at 200 MHz for pipelined read output |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - dual-rail 3.3V operation with separate power domains |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Power Consumption | IDD = 360 mA max at 200 MHz; IZZ = 30 µA in full sleep - low-power retention during idle periods |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - configurable at power-up, static during operation |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; pin count and layout conform to PKG100 footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous operations aligned to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip selection logic (CE LOW, CS0 HIGH, CS1 LOW) for multi-SRAM systems |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal counter; ADSP (processor) and ADSC (cache) load initial address synchronously |
| LBO | Burst Order Selector | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst - must remain stable during operation |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces current to 30 µA while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional synchronous data bus; registered input/output paths with pipelined output staging |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS (common ground) require separate decoupling per JEDEC guidelines |
| TMS, TDI, TCK, TDO, TRST | JTAG Boundary Scan | IEEE 1149.1-compliant test interface; TRST optional, internal pull-up; available in BGA variants only - not present on TQFP-100 |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First output data appears one clock cycle after address latch; enables continuous burst streaming without pipeline stalls |
| Single-Cycle Deselect | Device enters high-impedance state within one CLK cycle upon CE/CS deassertion - eliminates bus contention in multi-device systems |
| Configurable Burst Sequence | LBO pin selects between linear (00→01→10→11) or interleaved (00→01→11→10) 2-bit A0/A1 advancement - matches CPU/cache controller addressing patterns |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse width constraints; supports variable-latency writes without external control overhead |
| Low-Power Sleep Mode | ZZ HIGH reduces supply current to 30 µA while guaranteeing data retention - critical for power-constrained embedded systems |
Applications
| Network Packet Buffering | High-Performance Cache Controller |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with line-rate throughput requirements. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.1 ns read access and pipelined burst output to feed ASIC-based forwarding engines. Use Value: Enables zero-wait-state packet processing at 200 MHz, reducing latency jitter and supporting 10 Gbps+ switching fabric bandwidth. | Use Scenario: Acting as L2 cache tag/data RAM in RISC-V or ARM-based SoCs where cache coherency and low-latency access are critical. IC Role / Device Role / Timing Role: 36-bit-wide memory array interfaced to cache controller via ADSP/ADSC handshake and ADV-driven burst reads. Use Value: Linear burst mode aligns with sequential instruction fetch patterns; single-cycle deselect prevents bus turnaround delays during cache line fills. |
| Industrial PLC Memory Expansion | Test Equipment Data Capture Buffer |
Use Scenario: Extending program memory and real-time I/O mapping space in programmable logic controllers operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM with guaranteed operation at full speed over extended temperature range and robust power-down retention. Use Value: ZZ sleep mode reduces system standby power by >90% while preserving configuration state during maintenance intervals. | Use Scenario: Capturing high-speed analog-to-digital samples in automated test equipment with precise timestamp alignment. IC Role / Device Role / Timing Role: High-bandwidth buffer accepting burst writes from ADC interface logic using GW/BWE-controlled synchronous writes. Use Value: Self-timed write cycle accommodates variable sample rates without external timing adjustments; 36-bit width supports parallel 32-bit data + 4-bit validity flags. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362KV18 | 128K × 18-bit organization, 1.8V core / 3.3V I/O, no JTAG, 165-ball fBGA only | Requires two devices for 36-bit width; lacks LBO-configurable burst; no ZZ sleep mode | Select when lower core voltage and higher density per package are prioritized over burst flexibility and power-down capability |
| AS7C3256A-20JC | 128K × 32-bit, 3.3V-only, asynchronous interface, SOJ-44 package, no burst or pipelining | No burst counter, no pipelined outputs, no JTAG, no sleep mode - simpler but lower performance | Select for cost-sensitive legacy designs where deterministic 20 ns access suffices and burst functionality is unnecessary |
Compared with CY7C1362KV18 and AS7C3256A-20JC, the 71V35761S200PFG uniquely combines 36-bit width, 200 MHz pipelined burst operation, LBO-selectable addressing, and ZZ-controlled sleep - making it optimal for new high-speed embedded systems requiring both bandwidth and power efficiency.
Availability
71V35761S200PFG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, test equipment, and high-performance computing applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.
Supply support for 71V35761S200PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.
The 71V35761S200PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for cache, buffer, and FIFO applications in systems demanding sub-4 ns access, deterministic burst timing, and robust industrial reliability.
FAQ
What is the maximum operating frequency of the 71V35761S200PFG?
The 71V35761S200PFG is rated for 200 MHz operation under commercial conditions, delivering a 3.1 ns clock-to-data valid (tCD) timing parameter. This frequency is validated across the full industrial temperature range (–40°C to +85°C) at 3.3 V ±5%, with timing margins maintained per AC Electrical Characteristics Table 16 in the official datasheet.
Does the 71V35761S200PFG support JTAG boundary scan?
The 71V35761S200PFG does not include JTAG boundary scan. JTAG (TMS, TDI, TCK, TDO, TRST) is only available on the "SA" variant (e.g., 71V35761SA), not the "S" version. The 71V35761S200PFG uses the TQFP-100 package, which omits these pins - confirmed by Pin Configuration Drawing 02 and Pin Description Summary Table 01.
How does the LBO pin affect burst addressing in the 71V35761S200PFG?
The LBO pin on the 71V35761S200PFG statically selects burst order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). This setting must be stable before device initialization and cannot change during operation. The sequence applies to A0/A1 bits only, as defined in Tables 14 and 15 of the datasheet.
What is the function of the ZZ pin on the 71V35761S200PFG?
The ZZ pin on the 71V35761S200PFG is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to 30 µA (IZZ) while guaranteeing data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW, and the device must be deselected during wake-up per Timing Waveform Figure 12.
Can the 71V35761S200PFG operate with different supply voltages for core and I/O?
Yes - the 71V35761S200PFG uses separate supplies: VDD (3.3 V ±5%) powers the core logic, and VDDQ (3.3 V ±5%) powers the I/O buffers. This dual-rail design allows independent decoupling and noise isolation, and is required for proper operation per Recommended DC Operating Conditions Table 04.
71V35761S200PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V35761S200PFG FAQ
1.How can I place an order for 71V35761S200PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761S200PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761S200PFG reliable?
The price and inventory of 71V35761S200PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761S200PFG is usually 5 days.
3.What payment methods are accepted for 71V35761S200PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761S200PFG transactions.
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4.How is shipping managed for 71V35761S200PFG?
71V35761S200PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761S200PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761S200PFG?
For technical support, including 71V35761S200PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761S200PFG requirements.
6.How does Aetrix verify that 71V35761S200PFG is sourced from the original manufacturer or authorized distributors?
All 71V35761S200PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761S200PFG meets industry standards.
7.What is the process for return or replacement of 71V35761S200PFG?
All 71V35761S200PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761S200PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761S200PFG part is unused and in its original packaging.
Return procedure for 71V35761S200PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761S200PFG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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