Renesas 71V35761S200PFG8

Overview

71V35761S200PFG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It delivers 200MHz operation (3.1ns clock access), supports linear/interleaved burst modes via LBO input, and features self-timed write with global/byte write control. Used in high-speed cache and packet buffering subsystems requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V35761S200PFG8 datasheet, 71V35761S200PFG8 pinout, 71V35761S200PFG8 application, or 71V35761S200PFG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep-mode current (30mA), TQFP-100 package compatibility, and industrial-grade temperature support (–40°C to +85°C) at 166MHz/183MHz speeds.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data on the next rising CLK edge and subsequent words on three consecutive edges.

Operation relies on dual chip-select logic (CS0 HIGH / CS1 LOW), ADSP/ADSC status inputs for address latching, and ADV-controlled burst advancement. The device supports both global writes (GW) and byte-level writes (BW1–BW4 with BWE gating), while OE enables asynchronous output control and ZZ provides asynchronous sleep entry with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V35761S200PFG8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362KV18 and AS7C33128P, the 71V35761S200PFG8 uniquely combines 36-bit width with pipelined burst reads, single-cycle deselect, and industrial-temp 200 MHz operation-making it optimal for legacy telecom and high-reliability embedded caching where timing determinism and parity integrity are mandatory.

Availability

71V35761S200PFG8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom line card memory, and industrial PLC data logging requiring stable component supply and long-term lifecycle assurance.

Supply support for 71V35761S200PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.

The 71V35761S200PFG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst throughput, and robust operation in telecom infrastructure, industrial automation, and military/aerospace systems.

FAQ

What is the maximum operating frequency of the 71V35761S200PFG8?

The 71V35761S200PFG8 is rated for 200 MHz operation in the commercial temperature range (0°C to +70°C), achieving a 5 ns clock cycle time and 3.1 ns clock-to-data (tCD) delay. At industrial temperatures (–40°C to +85°C), it supports up to 183 MHz (3.3 ns tCD) and 166 MHz (3.5 ns tCD), with corresponding AC timing specifications fully characterized and guaranteed.

Does the 71V35761S200PFG8 support both linear and interleaved burst modes?

Yes, the 71V35761S200PFG8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) input pin. When LBO is driven LOW, the device uses linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation to avoid undefined burst behavior.

What package type is used for the 71V35761S200PFG8?

The 71V35761S200PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 0.5 mm pitch and 14 mm × 20 mm body size. It is distinct from the BGA variants (119-ball and 165-ball) and carries the "PFG8" suffix denoting this specific TQFP configuration.

How does the ZZ pin function in the 71V35761S200PFG8?

The ZZ pin on the 71V35761S200PFG8 provides asynchronous entry into full sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to 30 mA max while guaranteeing data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW, and the device must be deselected during wake-up.

Can the 71V35761S200PFG8 perform byte-level writes?

Yes, the 71V35761S200PFG8 supports granular byte writes using BW1–BW4 (each controlling a 9-bit segment: BW1→I/O0–7+I/OP1, BW2→I/O8–15+I/OP2, etc.) gated by BWE. When BWE is LOW and any BWx is active, only the selected bytes are written; all outputs are disabled during byte-write cycles to prevent bus conflicts.