Renesas 71V35761SA166BG

Overview

71V35761SA166BG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO, features JTAG boundary scan (IEEE 1149.1), and targets high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V35761SA166BG datasheet, 71V35761SA166BG pinout, 71V35761SA166BG application, or 71V35761SA166BG equivalent, key selection criteria include burst-mode timing compliance, 165-ball fine-pitch BGA (BQG165) package compatibility, industrial temperature support (–40°C to +85°C), and JTAG-enabled testability for system-level validation.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address input, with output pipelining delivering first data on the second clock edge and subsequent data on successive rising edges.

Burst order is selected by the asynchronous LBO pin (LOW = linear, HIGH = interleaved), while ADV controls burst advance. Write operations support global (GW) or byte-selectable (BW1–BW4 + BWE) modes, and sleep mode is activated asynchronously via ZZ input to reduce supply current to 30–35mA.

Key Specifications

Pinout & Package

Packaged in a 165-ball fine-pitch ball grid array (BQG165), JEDEC-compliant, 13 mm × 15 mm footprint with 0.8 mm ball pitch. Pinout validated per IDT document 5301 tbl 17 and drw 04.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166BAXI and AS7C3256P-166BIN, the 71V35761SA166BG uniquely integrates JTAG testability, hardware burst sequencing, and asynchronous sleep control-enabling higher system integration, lower test overhead, and deterministic low-power behavior in telecom and industrial control.

Availability

71V35761SA166BG is available at Aetrix Electronics and suitable for high-speed cache buffers, telecom line card memory, industrial PLC data loggers, and ruggedized base station controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761SA166BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions, now part of Renesas Electronics since 2019.

The 71V35761SA series belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking infrastructure, wireless base stations, and real-time industrial control systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761SA166BG?

The 71V35761SA166BG is rated for 166MHz operation with a 3.5ns clock access time under industrial temperature conditions (–40°C to +85°C). This specification is guaranteed across VDD and VDDQ = 3.3V ±5%, and defines the minimum clock cycle time (tCYC = 6ns) for reliable read/write timing margins.

Does the 71V35761SA166BG support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V35761SA166BG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and must remain static during burst operation.

What package type and ball count does the 71V35761SA166BG use, and is it RoHS compliant?

The 71V35761SA166BG uses a 165-ball fine-pitch ball grid array (BQG165) package, JEDEC-standard, with 0.8 mm ball pitch and 13 mm × 15 mm body size. It is RoHS-compliant and qualifies as a green part per IDT's ordering information, with lead-free terminations and halogen-free molding compound.

How does the JTAG interface on the 71V35761SA166BG function, and which pins are dedicated to it?

The 71V35761SA166BG implements a full IEEE 1149.1-compliant boundary-scan TAP controller. Dedicated pins are TMS, TDI, TCK, TDO, and optional TRST - all located on the BQG165 package per pin map 5301 tbl 17. These enable board-level interconnect testing, device identification, and in-system programming verification.

What is the purpose of the ZZ pin on the 71V35761SA166BG, and what power savings does it provide?

The ZZ pin on the 71V35761SA166BG is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and places the device in full sleep mode, reducing supply current to IZZ = 30–35 mA. This achieves >80% power reduction versus active operation (IDD = 320–350 mA), while guaranteeing data retention across the industrial temperature range.