My Inquiry
My Account
Renesas 71V35761SA166BGG
- Part No.:
- 71V35761SA166BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,583
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V35761SA166BGG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It delivers 166MHz operation (3.5ns clock access), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom control plane buffers.
For engineers reviewing the 71V35761SA166BGG datasheet, 71V35761SA166BGG pinout, 71V35761SA166BGG application, or 71V35761SA166BGG equivalent, this page provides verified timing parameters, JEDEC-standard 119-ball BGA (BGG) package mapping, burst-mode behavior under ADV/LBO control, sleep mode (ZZ) power-down characteristics, and direct alternatives for memory subsystem redesign.
Technical Context
The 71V35761SA166BGG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state-no runtime reconfiguration.
It supports four distinct write modes: global write (GW), byte write enable (BWE) with BW1–BW4 per 9-bit byte, asynchronous OE-controlled output gating, and full-sleep entry via asynchronous ZZ HIGH. All I/Os are 3.3V-tolerant with pipelined output registers synchronized to CLK rising edge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data path for wide-bus systems like RISC CPU caches or packet buffer interfaces. |
| Clock Frequency / Access Time | 166 MHz max (tCYC = 6 ns); tCD = 3.5 ns - defines minimum clock period for guaranteed valid read data at next rising edge. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails allow independent noise management for logic and interface domains. |
| Burst Mode Control | LBO input selects linear vs. interleaved 4-word burst sequence; ADV=LOW triggers counter advance - enables cache-line-aligned transfers without external sequencer. |
| Power Management | IZZ = 35 mA (industrial); ZZ HIGH disables internal clock and reduces current to sleep level while retaining data - critical for low-power standby in telecom line cards. |
| JTAG Interface | IEEE 1149.1-compliant TMS/TDI/TCK/TRST/TDO on dedicated pins (BGA only); enables board-level structural test and in-system debug without additional probes. |
| Operating Temperature | –40°C to +85°C industrial grade; validated across full range for stable timing margins in base station and industrial controller environments. |
Pinout & Package
71V35761SA166BGG is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm pitch. Pinout conforms to BG119 layout with dedicated VDDQ/VSS pairs distributed for signal integrity and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is active LOW - supports 128K depth addressing. |
| CLK | System Clock Input | Single-ended CMOS clock; all register transitions referenced to rising edge - defines timing budget for pipelined reads/writes. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register - enables dual-source burst initiation without glue logic. |
| GW, BWE, BW1–BW4 | Write Control | GW writes all 36 bits; BWE enables byte-write mode; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) - allows partial-word updates without read-modify-write. |
| OE | Output Enable | Asynchronous enable; drives I/Os to high-Z when HIGH - permits bus sharing and avoids contention during multiplexed data transfers. |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep; gates internal CLK and reduces IDD to IZZ - enables rapid power-state transition in energy-sensitive applications. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | Dedicated boundary-scan pins (BGA only); TRST optional reset - supports IEEE 1149.1 test access port for production test and field diagnostics. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths - eliminates external latch requirements and ensures setup/hold compliance at 166 MHz. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First read data appears one clock cycle after address latch; subsequent burst words align to consecutive CLK edges - eliminates wait states in high-throughput memory controllers. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle upon CE/CS assertion change - enables rapid context switching between memory banks or peripherals. |
| Linear/Interleaved Burst Selection | LBO pin statically configures burst order; no software overhead or register write needed - simplifies initialization and guarantees deterministic access patterns. |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external strobes; GW/BWE/BWx sampling occurs on CLK edge - removes dependency on precise external timing generation. |
| Low-Power Sleep Mode | IZZ ≤ 35 mA at VDD = 3.465 V, –40°C to +85°C - reduces idle power by >80% vs. standby (ISB1), enabling thermal-constrained designs in dense line cards. |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
Use Scenario: Stores packet headers and metadata in OC-192/STM-64 line interface modules requiring deterministic latency and burst-aligned access. IC Role / Device Role / Timing Role: High-speed SRAM acting as first-level packet buffer with pipelined read/write and single-cycle deselect for dynamic buffer allocation. Use Value: 166 MHz operation and 3.5 ns tCD ensure sub-6 ns read turnaround; burst mode delivers full 36-bit cache line per address, reducing bus arbitration overhead. |
Use Scenario: Implements instruction/data scratchpad for multi-core network processors handling deep packet inspection and QoS classification. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to tightly coupled memory with JTAG visibility for runtime debug. Use Value: JTAG boundary scan enables in-system verification of interconnect integrity; industrial temp rating ensures reliability in fanless chassis environments. |
| Industrial PLC Memory Expansion | Radar Signal Processing FIFO |
Use Scenario: Extends local memory in programmable logic controllers managing real-time I/O scanning and motion control loops. IC Role / Device Role / Timing Role: Wide-bus SRAM interfacing directly to ARM Cortex-R or PowerPC MPC85xx host with burst-aligned DMA transfers. Use Value: Separate VDD/VDDQ rails suppress coupling noise; 36-bit width matches common processor data bus widths, eliminating glue logic. |
Use Scenario: Buffers time-domain samples between ADC and FFT engine in phased-array radar front ends operating in harsh temperature environments. IC Role / Device Role / Timing Role: Low-latency, high-reliability SRAM with sleep mode support for duty-cycled acquisition windows. Use Value: ZZ-controlled sleep reduces average power during idle intervals; industrial temperature range (–40°C to +85°C) ensures operation in outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166AXC | 128K × 36, 166 MHz, 3.3V; no JTAG; uses 100-pin TQFP only - lacks boundary scan and BGA packaging. | Best suited for cost-sensitive, non-test-critical applications where PCB space allows TQFP and JTAG is unnecessary. | Select when JTAG is not required and TQFP footprint is acceptable; verify ADV/ADSP timing compatibility with existing controller. |
| AS7C33166B-166BIN | 128K × 36, 166 MHz, 3.3V; supports linear burst only; no ZZ sleep mode - limited power management capability. | Appropriate for always-on embedded systems where sleep mode is unused and burst sequencing is fixed. | Choose if linear-only burst suffices and full sleep mode is not needed; confirm absence of ZZ does not violate system power budget. |
Compared with CY7C1362BV33-166AXC and AS7C33166B-166BIN, the 71V35761SA166BGG uniquely combines JTAG testability, industrial-grade BGA packaging, and hardware-controlled sleep mode - making it optimal for high-reliability, test-intensive telecom and defense applications where debug access and thermal/power constraints are critical.
Availability
71V35761SA166BGG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V35761SA166BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V35761SA166BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in network processors, baseband units, and real-time control systems.
FAQ
What is the maximum operating frequency of the 71V35761SA166BGG?
The 71V35761SA166BGG is rated for 166 MHz operation, corresponding to a 6 ns clock cycle time (tCYC) and 3.5 ns clock-to-data delay (tCD). This speed is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device also supports 183 MHz and 200 MHz variants in commercial grade, but 71V35761SA166BGG is specifically characterized and screened for 166 MHz industrial use.
Does the 71V35761SA166BGG support both linear and interleaved burst modes?
Yes, the 71V35761SA166BGG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing; when HIGH, it uses interleaved order. This selection is static and must remain stable during operation - the 71V35761SA166BGG does not support dynamic burst-mode switching mid-operation.
What package type is used for the 71V35761SA166BGG?
The 71V35761SA166BGG uses a 119-ball fine-pitch ball grid array (fBGA) package, designated BGG119 per JEDEC standards. It measures 12 mm × 12 mm with 0.8 mm ball pitch and includes dedicated power/ground balls distributed for EMI suppression and thermal performance. This differs from TQFP or 165-ball fBGA variants of the same family.
How does the ZZ pin function in the 71V35761SA166BGG?
The ZZ pin on the 71V35761SA166BGG is an asynchronous input that places the device into full sleep mode when driven HIGH. In sleep mode, internal clocking is gated, supply current drops to IZZ ≤ 35 mA (industrial), and all outputs go high-impedance - while data retention is guaranteed. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume.
Is JTAG boundary scan available on the 71V35761SA166BGG?
Yes, the 71V35761SA166BGG includes a fully compliant IEEE 1149.1 JTAG boundary scan interface with dedicated TMS, TDI, TCK, TDO, and optional TRST pins. This feature is implemented only in BGA packages (including BGG119) and supports structural testing, interconnect verification, and in-system programming - distinguishing it from non-JTAG "S" variants in the same family.
71V35761SA166BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA166BGG FAQ
1.How can I place an order for 71V35761SA166BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA166BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA166BGG reliable?
The price and inventory of 71V35761SA166BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA166BGG is usually 5 days.
3.What payment methods are accepted for 71V35761SA166BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA166BGG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V35761SA166BGG?
71V35761SA166BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA166BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA166BGG?
For technical support, including 71V35761SA166BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA166BGG requirements.
6.How does Aetrix verify that 71V35761SA166BGG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA166BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA166BGG meets industry standards.
7.What is the process for return or replacement of 71V35761SA166BGG?
All 71V35761SA166BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGG part is unused and in its original packaging.
Return procedure for 71V35761SA166BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA166BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
