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Renesas 71V35761SA166BGG8
- Part No.:
- 71V35761SA166BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,900
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Product details
Overview
71V35761SA166BGG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO, features JTAG boundary scan (IEEE 1149.1), and delivers high-speed data buffering in cache-coherent systems.
For engineers reviewing the 71V35761SA166BGG8 datasheet, 71V35761SA166BGG8 pinout, 71V35761SA166BGG8 application, or 71V35761SA166BGG8 equivalent, key selection criteria include burst-mode timing compliance, 166MHz read/write cycle support, TQFP/BGA package compatibility, JTAG testability, and industrial temperature operation (–40°C to +85°C).
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four consecutive addresses from a single input, enabling pipelined output delivery on successive CLK edges - first word delayed by one cycle, subsequent words aligned to rising edges.
It supports dual write control: global write (GW) for full 36-bit writes and byte-write enables (BW1–BW4 + BWE) for selective 9-bit writes. The ZZ input provides asynchronous sleep mode with guaranteed data retention, while ADSP/ADSC inputs enable processor- or cache-controller-initiated burst loading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit parallel data path for wide-bus applications. |
| Max Clock Frequency | 166 MHz; enables 6 ns minimum clock cycle time for deterministic timing in high-throughput memory subsystems. |
| Access Time | 3.5 ns (tCD); defines maximum delay from CLK rising edge to valid output data under industrial conditions. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage stability independent of core switching noise. |
| Burst Mode Control | LBO pin selects linear or interleaved burst sequence; determines address increment pattern for cache line fills. |
| Temperature Range | –40°C to +85°C; qualified for industrial environments without derating or thermal management overhead. |
| JTAG Support | IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TDO/TRST); enables board-level test and debug without physical probe access. |
Pinout & Package
71V35761SA166BGG8 is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-standard footprint measuring 12 mm × 12 mm with 0.8 mm ball pitch. Pinout includes dedicated burst control (ADV, ADSP, ADSC), byte-write enables (BW1–BW4), and JTAG interface signals (TMS, TDI, TCK, TDO, TRST).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge when ADSP or ADSC is asserted low. |
| ADV | Burst Address Advance | Active-low synchronous signal that increments internal burst counter; held high to suspend burst sequence. |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-initiated address load triggers; ADSP gated by CE, ADSC independent. |
| BW1–BW4 | Byte Write Enables | Select 9-bit subwords (I/O0–7+I/OP1, etc.); active-low, enabled only when BWE is low. |
| TMS, TDI, TCK, TDO, TRST | JTAG Boundary Scan | Full IEEE 1149.1 test interface; TRST optional asynchronous reset; all pins have internal pull-ups. |
| ZZ | Sleep Mode Input | Asynchronous high-active signal that gates internal CLK and reduces supply current to ≤35 mA in full sleep. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure clean setup/hold margins at 166 MHz. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Output | Delivers first data word after one clock latency, then three more words on successive rising edges - eliminates wait states in burst-oriented processors. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle, enabling rapid context switching between memory banks or devices. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse width constraints; supports flexible GW or byte-write initiation without external strobe generation. |
| Linear/Interleaved Burst Selection | LBO pin configures burst address order to match CPU cache line mapping (e.g., Pentium vs. PowerPC), avoiding software remapping overhead. |
| Low-Power Sleep Mode | ZZ-driven sleep reduces IDD to ≤35 mA while retaining full memory contents - critical for power-constrained embedded systems with intermittent activity. |
Applications
| Cache Coherency Controller Buffer | High-Speed Network Packet Buffer |
|---|---|
Use Scenario: Stores snoop responses and directory entries in multi-processor cache coherency protocols (e.g., MESI). IC Role / Device Role / Timing Role: Acts as low-latency, burst-capable tag/data buffer interfacing directly with cache controller logic and system bus. Use Value: 166MHz burst reads deliver four 36-bit cache line fragments per 6ns cycle, matching processor request bandwidth without stalling. | Use Scenario: Temporarily holds ingress/egress packet headers and payloads in Layer 2/3 switches and routers. IC Role / Device Role / Timing Role: Provides synchronous, pipelined storage for variable-length packet segments with deterministic access timing. Use Value: Single-cycle deselect allows rapid bank switching between ingress and egress queues, minimizing packet queuing latency. |
| Industrial PLC Real-Time Data Log | Radar Signal Processing FIFO |
Use Scenario: Captures timestamped sensor readings and actuator commands in deterministic real-time control loops. IC Role / Device Role / Timing Role: Serves as a high-reliability, temperature-hardened FIFO buffer with guaranteed data retention during sleep cycles. Use Value: Industrial temp range (–40°C to +85°C) and ZZ sleep mode enable continuous logging with <35 mA quiescent current during idle intervals. | Use Scenario: Buffers digitized RF samples between ADC and FFT engine in pulsed-Doppler radar front-ends. IC Role / Device Role / Timing Role: Functions as a burst-aligned, low-jitter memory stage synchronizing high-speed sampling clocks with processing pipelines. Use Value: Pipelined 3.5ns tCD and 166MHz clocking ensure sample-to-FFT latency remains bounded and repeatable across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166AXC | 128K × 36, 166MHz, 3.3V, no JTAG; uses different burst control (BWS# instead of ADV/ADSP) | Lacks IEEE 1149.1 test interface; requires external burst sequencing logic | Choose when JTAG is unnecessary and legacy Cypress design reuse is prioritized. |
| AS7C312836B-166BIN | 128K × 36, 166MHz, 3.3V, no LBO pin; fixed linear burst only; no ZZ sleep mode | Missing interleaved burst and sleep control limits use in cache controllers requiring flexible burst patterns and low-power idle states | Choose for cost-sensitive, non-cache applications where burst mode is fixed and power cycling is managed externally. |
Compared with CY7C1362BV33-166AXC and AS7C312836B-166BIN, the 71V35761SA166BGG8 uniquely integrates JTAG testability, programmable burst ordering (LBO), and hardware sleep (ZZ) - making it the only option supporting full diagnostic coverage, cache-line-mapped burst sequences, and autonomous low-power operation in industrial control and networking systems.
Availability
71V35761SA166BGG8 is available at Aetrix Electronics and suitable for cache coherency controllers, network packet buffers, industrial PLC data loggers, and radar signal processing FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761SA166BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V35761 family was designed specifically for high-bandwidth, low-latency synchronous memory applications in cache-coherent multiprocessor systems and packet-switching infrastructure - emphasizing burst efficiency, deterministic timing, and industrial reliability.
FAQ
What is the operating temperature range for the 71V35761SA166BGG8?
The 71V35761SA166BGG8 is rated for industrial temperature operation from –40°C to +85°C. This specification is validated across all AC and DC parameters in the datasheet, including 166MHz timing, sleep mode current (IZZ ≤35 mA), and I/O voltage tolerance. It does not require derating or thermal margining in enclosed industrial enclosures.
Does the 71V35761SA166BGG8 support both linear and interleaved burst modes?
Yes, the 71V35761SA166BGG8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11). When LBO is HIGH, it performs interleaved burst (00→01→11→10). This selection is static and must remain stable during operation, as confirmed in the Pin Definitions table.
What package type is used for the 71V35761SA166BGG8?
The 71V35761SA166BGG8 uses a 119-ball fine-pitch BGA (BGG119) package, measuring 12 mm × 12 mm with 0.8 mm ball pitch. This is explicitly stated in the "Pin Configuration(5)" section and confirmed by the part number suffix "BGG8", where "BGG" denotes the BGA variant and "8" indicates industrial temperature grade.
How does the JTAG interface on the 71V35761SA166BGG8 differ from standard implementations?
The 71V35761SA166BGG8 implements full IEEE 1149.1-compliant boundary scan with TMS, TDI, TCK, TDO, and optional TRST pins. All JTAG pins have internal pull-up resistors, and TRST is asynchronous but optional - if unused, it may be left floating. This matches the "SA" version designation and is distinct from the base "S" version, which omits JTAG entirely.
What is the function of the ZZ pin on the 71V35761SA166BGG8?
The ZZ pin on the 71V35761SA166BGG8 is an asynchronous high-active sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤35 mA (ISB1/IZZ) while guaranteeing full data retention. It has an internal pull-down resistor, so it defaults to active mode when left unconnected - a key design detail confirmed in the Pin Definitions table.
71V35761SA166BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
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All 71V35761SA166BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGG8 part is unused and in its original packaging.
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71V35761SA166BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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Microchip Technology
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Microchip Technology
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