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Renesas 71V35761SA166BGGI
- Part No.:
- 71V35761SA166BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,291
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Product details
Overview
71V35761SA166BGGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO, features JTAG boundary scan (IEEE 1149.1), and targets high-speed cache and memory subsystems in networking and telecom equipment.
For engineers reviewing the 71V35761SA166BGGI datasheet, 71V35761SA166BGGI pinout, 71V35761SA166BGGI application, or 71V35761SA166BGGI equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep mode current (30mA), TQFP/BGA package compatibility, 3.3V I/O tolerance, and industrial temperature support (–40°C to +85°C).
Technical Context
The 71V35761SA166BGGI implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one clock cycle after address latch.
Burst order is selected statically via LBO (LOW = linear, HIGH = interleaved); ADV controls burst advance; ADSP/ADSC provide processor/cache address status latching; GW enables full-word writes while BWE/BW1–BW4 support byte-level granularity. JTAG interface is optional and IEEE 1149.1-compliant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), supporting 36-bit parallel data paths for wide-bus systems |
| Clock Frequency | 166 MHz - guarantees 6 ns clock cycle time for deterministic timing in real-time memory subsystems |
| Access Time | 3.5 ns - maximum clock-to-data valid delay under industrial conditions, enabling tight system timing budgets |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - dual-rail I/O/core supply ensures signal integrity and noise margin |
| Sleep Current (IZZ) | 30 mA - ultra-low power consumption in full sleep mode (ZZ HIGH), critical for thermal management |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including base station and router applications |
| JTAG Support | IEEE 1149.1 compliant - enables board-level testability and debug without external probes |
Pinout & Package
Packaged in a 119-ball fine-pitch BGA (BGG) per JEDEC standard, footprint code BGGI indicates lead-free, RoHS-compliant 119-ball grid array with 1.0 mm pitch and 13 mm × 13 mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP/ADSC active LOW |
| CLK | System Clock Input | Primary timing reference; all registers and burst logic synchronized to this edge-triggered input |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP/ADSC load address register from processor/cache with priority gating |
| LBO, ZZ, TMS–TDO | Configuration & Test | LBO selects burst order (static); ZZ enables sleep mode; TMS/TDI/TCK/TDO implement JTAG boundary scan |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths ensure setup/hold compliance |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Delivers first data on second CLK edge after address latch, reducing read latency by one cycle vs. non-pipelined SRAMs |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle, enabling rapid context switching between memory banks |
| Linear/Interleaved Burst Mode | LBO pin selects burst sequence (e.g., 00→01→10→11 for linear; 00→01→11→10 for interleaved), matching CPU cache line patterns |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; write completion determined autonomously per cycle |
| JTAG Boundary Scan | IEEE 1149.1-compliant test interface supports interconnect testing and in-system programming in dense BGA layouts |
Applications
| Network Router Data Plane | Telecom Baseband Processor Cache |
|---|---|
Use Scenario: High-throughput packet buffering and header lookup in Layer 3 forwarding engines. IC Role / Device Role / Timing Role: Acts as low-latency, burst-capable SRAM for TCAM-assisted forwarding tables and queue management buffers. Use Value: 166MHz operation and pipelined outputs sustain >5 Gbps sustained throughput; single-cycle deselect minimizes bank conflict stalls. | Use Scenario: Real-time FFT and channel estimation buffers in 4G/LTE baseband processing units. IC Role / Device Role / Timing Role: Provides deterministic-access scratchpad memory for DSP co-processors requiring burst-aligned 36-bit word streams. Use Value: Linear burst mode matches natural FFT coefficient ordering; industrial temp rating ensures reliability in outdoor macrocells. |
| Industrial Ethernet Switch ASIC Interface | Avionics Flight Control Data Buffer |
Use Scenario: Interfacing with multi-gigabit switch fabric ASICs requiring wide, low-jitter memory access. IC Role / Device Role / Timing Role: Serves as synchronous interface buffer between switch fabric controller and external packet memory. Use Value: 3.3V I/O compatibility and 7 pF I/O capacitance meet stringent signal integrity requirements for 200+ Mbps backplane links. | Use Scenario: Storing validated sensor fusion results and actuator command histories in DO-254-certifiable flight control modules. IC Role / Device Role / Timing Role: Functions as radiation-tolerant, deterministic-access memory for safety-critical data logging and rollback recovery. Use Value: ZZ sleep mode reduces standby power to 30 mA during idle phases; –40°C to +85°C rating satisfies RTCA/DO-160 environmental profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362KV18-166BZXI | 144K × 18-bit (2.5 Mbit), 166MHz, 3.3V core/I/O, no JTAG, 165-ball fBGA | Half the data width (18-bit vs. 36-bit); requires two devices for same bandwidth; lacks boundary scan | Select when 18-bit bus width suffices and JTAG is unnecessary; verify layout compatibility with different ball map |
| AS7C33128P-166BIN | 128K × 32-bit (4 Mbit), 166MHz, 3.3V, no burst counter, no JTAG, 100-pin TQFP | 4-bit narrower (32-bit vs. 36-bit); no pipelined burst or linear/interleaved mode; TQFP instead of BGA | Choose for cost-sensitive, space-constrained designs where burst flexibility and JTAG are not required |
Compared with CY7C1362KV18-166BZXI and AS7C33128P-166BIN, the 71V35761SA166BGGI uniquely delivers 36-bit width, integrated burst counter, pipelined outputs, and JTAG in a 119-ball BGA-enabling higher bandwidth density and testability in compact, high-reliability systems.
Availability
71V35761SA166BGGI is available at Aetrix Electronics and suitable for network infrastructure, telecom baseband processing, and industrial embedded control requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V35761SA166BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.
The 71V35761SA166BGGI belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-oriented memory subsystems in communications and computing infrastructure where deterministic timing and industrial reliability are mandatory.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V35761SA166BGGI?
The 71V35761SA166BGGI is rated for 166 MHz operation with a maximum clock-to-data valid time (tCD) of 3.5 ns under industrial temperature conditions (–40°C to +85°C). This specification is guaranteed across the full voltage range (VDD/VDDQ = 3.3 V ±5%) and defines the device's real-time performance ceiling in burst-read scenarios.
Does the 71V35761SA166BGGI support both linear and interleaved burst addressing, and how is it controlled?
Yes, the 71V35761SA166BGGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input. When LBO is driven LOW, the internal burst counter follows linear order (e.g., 00→01→10→11); when HIGH, it uses interleaved order (e.g., 00→01→11→10). LBO is static and must remain stable during operation.
What power-saving modes does the 71V35761SA166BGGI offer, and what is the sleep current?
The 71V35761SA166BGGI provides a full sleep mode activated by driving the ZZ pin HIGH, which gates the internal clock and reduces supply current to 30 mA (IZZ) under industrial conditions. This mode retains data and allows fast wake-up (<100 ns recovery time), making it ideal for duty-cycled systems like wireless base stations.
Is JTAG boundary scan available on the 71V35761SA166BGGI, and which pins are used?
Yes, the 71V35761SA166BGGI includes an optional IEEE 1149.1-compliant JTAG boundary scan interface. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function and appear on the 119-ball BGA (BGG) package; TRST may be left floating if unused, as internal pull-up ensures default reset behavior.
What are the key timing differences between the 71V35761SA166BGGI and the commercial-grade 71V35761S variant?
The 71V35761SA166BGGI is the industrial-grade version (–40°C to +85°C), whereas the 'S' suffix denotes commercial grade (0°C to +70°C). Both share identical 166 MHz speed grade and pinout, but the 'SA' variant guarantees AC parameters-including tCD (3.5 ns), ISB1 (35 mA), and IZZ (35 mA)-over the extended temperature range, ensuring robustness in harsh environments.
71V35761SA166BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA166BGGI FAQ
1.How can I place an order for 71V35761SA166BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA166BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA166BGGI reliable?
The price and inventory of 71V35761SA166BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA166BGGI is usually 5 days.
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Once your 71V35761SA166BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA166BGGI?
For technical support, including 71V35761SA166BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA166BGGI requirements.
6.How does Aetrix verify that 71V35761SA166BGGI is sourced from the original manufacturer or authorized distributors?
All 71V35761SA166BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA166BGGI meets industry standards.
7.What is the process for return or replacement of 71V35761SA166BGGI?
All 71V35761SA166BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGGI part is unused and in its original packaging.
Return procedure for 71V35761SA166BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA166BGGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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