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Renesas 71V35761SA166BGGI8
- Part No.:
- 71V35761SA166BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA166BGGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-reliability embedded systems.
For engineers reviewing the 71V35761SA166BGGI8 datasheet, 71V35761SA166BGGI8 pinout, 71V35761SA166BGGI8 application, or 71V35761SA166BGGI8 equivalent, key selection considerations include its 119-ball BGA (BGG) package, industrial temperature range (–40°C to +85°C), synchronous write control with global/byte enables, and low-power sleep mode via ZZ input.
Technical Context
The 71V35761SA166BGGI8 implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter generates four sequential addresses per initial address, with output pipelining delivering first data on the next rising clock edge.
Burst order is selected statically via LBO (linear or interleaved), while ADV controls burst advance; ADSP/ADSC provide processor- or cache-controller–driven address latching. JTAG TMS/TDI/TCK/TRST/TDO pins enable IEEE 1149.1-compliant boundary scan testing - confirmed active in the "SA" variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit wide data bus interfaces without external width expansion. |
| Clock Frequency / Access Time | 166 MHz / 3.5 ns; guarantees deterministic read latency aligned to system clock edges for timing-critical control applications. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains allow independent noise management and signal integrity optimization. |
| Burst Mode Control | LBO pin selects linear or interleaved burst sequence; ADV pin enables/disables burst increment - critical for cache line fill and DMA efficiency. |
| Sleep Mode Current | IZZ = 35 mA max (industrial temp); ZZ input gates internal clock and reduces dynamic power while retaining data - essential for low-duty-cycle systems. |
| JTAG Compliance | IEEE 1149.1 boundary scan; TRST optional; TMS/TDI/TCK/TDO implemented - enables production test, board-level diagnostics, and debug visibility. |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including motor drives, base station infrastructure, and ruggedized networking equipment. |
Pinout & Package
Packaged in a 119-ball fine-pitch BGA (BGG), JEDEC-standard footprint (14 mm × 20 mm), with ball pitch of 1.0 mm. Pinout validated per IDT documentation for BG119/BGG119 package variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted low with CE enabled. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst) are edge-aligned to this signal - no internal PLL required. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global Write (GW) initiates full 36-bit write; BWE enables byte-write logic; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) - enables precise memory-mapped peripheral updates. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) independently trigger address register load - supports dual-bus coherency protocols. |
| LBO, ZZ, OE | Mode & Output Control | LBO sets burst order statically; ZZ enables low-power sleep asynchronously; OE disables outputs asynchronously - decouples timing-critical I/O from control logic. |
| TMS, TDI, TCK, TDO, TRST | JTAG Boundary Scan | Full IEEE 1149.1 interface; TRST optional reset; internal pull-ups on TMS/TDI/TCK/TRST - eliminates need for external biasing in most designs. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths ensure setup/hold compliance across process/voltage/temperature corners. |
| VDD, VDDQ, VSS | Power & Ground | Dual 3.3V supplies: VDD for core logic, VDDQ for I/O drivers; multiple VSS balls reduce ground bounce and improve signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data appears one clock cycle after address assertion; subsequent burst words delivered on consecutive rising edges - eliminates wait states in high-throughput data streaming. |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle; enables rapid context switching between memory banks or peripherals without pipeline stalls. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; GW/BWE/BWx sampling occurs on rising CLK - simplifies controller design and improves timing margin. |
| Asynchronous Sleep Entry | ZZ high immediately gates internal clock and cuts dynamic power; data retention guaranteed - ideal for burst-mode sensor acquisition with long idle intervals. |
| JTAG Boundary Scan (SA version) | Fully compliant IEEE 1149.1 interface with optional TRST; supports interconnect test, device identification, and in-system programming verification - critical for ATE and field diagnostics. |
Applications
| Network Packet Buffering | Industrial Motion Controller Memory |
|---|---|
Use Scenario: High-speed Ethernet switch ASIC buffers incoming/outgoing packets before classification and forwarding. IC Role / Device Role / Timing Role: 36-bit-wide synchronous SRAM provides low-latency, burst-capable packet storage with pipelined reads to match line-rate throughput. Use Value: 166MHz operation and single-cycle deselect enable real-time packet queuing without FIFO bottlenecks or arbitration delays. | Use Scenario: Real-time motion profile execution in CNC or robotics drive controllers requiring deterministic memory access for trajectory tables. IC Role / Device Role / Timing Role: SRAM serves as scratchpad memory for servo loop coefficients and position look-up tables, accessed synchronously with FPGA or DSP clock domain. Use Value: Pipelined outputs and burst counter deliver four interpolated position points per clock cycle - accelerating closed-loop update rates by 4× over non-burst alternatives. |
| Ruggedized Base Station Baseband | Avionics Data Acquisition Buffer |
Use Scenario: LTE/5G remote radio head (RRH) performs digital pre-distortion (DPD) using rapidly updated coefficient tables stored in local memory. IC Role / Device Role / Timing Role: Synchronous SRAM stores DPD lookup tables and intermediate results; JTAG enables in-field calibration verification and firmware validation. Use Value: Industrial temperature rating (–40°C to +85°C) and boundary scan support ensure reliability and testability in uncontrolled outdoor enclosures. | Use Scenario: Flight data recorder subsystem samples analog sensor channels at 100 kS/s and buffers raw data before compression and storage. IC Role / Device Role / Timing Role: SRAM acts as high-speed acquisition buffer interfaced to ADC controller; ZZ sleep mode minimizes power between sample bursts. Use Value: Asynchronous ZZ entry/exit allows microsecond-scale power gating - extending battery life in emergency locator transmitters without compromising capture readiness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166BAXI | 128K × 32 organization; no JTAG; 165-ball fBGA only; 3.3V I/O but 2.5V core | Lacks burst counter and pipelined outputs; requires external logic for burst address generation | Select when 32-bit bus width suffices and JTAG/testability is not required; verify voltage compatibility with host controller I/O. |
| AS7C3256B-166BIN | 128K × 32 organization; asynchronous interface; no burst mode; 100-pin TQFP only | No clocked operation or pipelining; higher access latency (15 ns typical); no sleep mode or JTAG | Choose for cost-sensitive, non-timing-critical buffering where synchronous performance and low power are secondary. |
Compared with CY7C1362BV33-166BAXI and AS7C3256B-166BIN, the 71V35761SA166BGGI8 uniquely delivers 36-bit width, pipelined burst reads, IEEE 1149.1 JTAG, and industrial-grade sleep mode - making it optimal for high-integrity, high-throughput embedded systems where deterministic timing and test coverage are mandatory.
Availability
71V35761SA166BGGI8 is available at Aetrix Electronics and suitable for network packet buffering, industrial motion control, ruggedized baseband processing, and avionics data acquisition requiring stable component supply and long-term industrial temperature support.
Supply support for 71V35761SA166BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a leader in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V35761SA166BGGI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for applications demanding deterministic latency, burst bandwidth, and robust testability in mission-critical embedded systems.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V35761SA166BGGI8?
The 71V35761SA166BGGI8 is rated for 166 MHz operation with a 3.5 ns clock access time under industrial temperature conditions (–40°C to +85°C). This specification is guaranteed across the full voltage range (VDD/VDDQ = 3.3 V ±5%) and verified per AC Electrical Characteristics Table 16 in the official IDT datasheet.
Does the 71V35761SA166BGGI8 support both linear and interleaved burst modes, and how is the selection made?
Yes, the 71V35761SA166BGGI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved burst order is activated. LBO is a static input and must remain stable during device operation to prevent undefined burst behavior.
What package type and ball count does the 71V35761SA166BGGI8 use, and is it RoHS-compliant?
The 71V35761SA166BGGI8 uses a 119-ball fine-pitch BGA (BGG) package, JEDEC-standard footprint (14 mm × 20 mm, 1.0 mm pitch). It is RoHS-compliant and qualifies as a green part per IDT's ordering information - lead-free, halogen-free, and compliant with JEDEC J-STD-020 reflow profiles.
How does the JTAG interface on the 71V35761SA166BGGI8 differ from the base 'S' version, and which pins are dedicated to it?
The 'SA' suffix denotes inclusion of IEEE 1149.1-compliant JTAG boundary scan, absent in the 'S' version. Dedicated pins are TMS, TDI, TCK, TDO, and optional TRST - located on balls U1–U6 per the BG119 pinout. All JTAG pins feature internal pull-ups, eliminating external resistors in most implementations.
What is the power consumption of the 71V35761SA166BGGI8 in full sleep mode, and how is it activated?
In full sleep mode, the 71V35761SA166BGGI8 draws ≤35 mA (industrial grade) when ZZ is driven HIGH. This asynchronously gates the internal clock and reduces dynamic power while guaranteeing data retention. Recovery time (tZZR) is 100 ns minimum, and the device must be deselected before exiting sleep mode.
71V35761SA166BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA166BGGI8 FAQ
1.How can I place an order for 71V35761SA166BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA166BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA166BGGI8 reliable?
The price and inventory of 71V35761SA166BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA166BGGI8 is usually 5 days.
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Once your 71V35761SA166BGGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA166BGGI8?
For technical support, including 71V35761SA166BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA166BGGI8 requirements.
6.How does Aetrix verify that 71V35761SA166BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA166BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA166BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA166BGGI8?
All 71V35761SA166BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGGI8 part is unused and in its original packaging.
Return procedure for 71V35761SA166BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA166BGGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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M24C02-FMC6TG
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