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Renesas 71V35761SA166BGI
- Part No.:
- 71V35761SA166BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,912
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Product details
Overview
71V35761SA166BGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) in SA version. Used in high-speed cache and networking buffer applications.
For engineers reviewing the 71V35761SA166BGI datasheet, 71V35761SA166BGI pinout, 71V35761SA166BGI application, or 71V35761SA166BGI equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP mechanical fit, industrial temperature support (–40°C to +85°C), and JTAG-enabled debug capability for system-level validation.
Technical Context
The 71V35761SA166BGI implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data on the next rising CLK edge and subsequent data on three consecutive edges.
Burst order is selected by the asynchronous LBO pin (LOW = linear, HIGH = interleaved), while ADV controls burst advance. Write operations support global (GW) or byte-selectable (BW1–BW4 + BWE) modes, and sleep mode is entered asynchronously via ZZ high, reducing supply current to 30–35mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), supporting 36-bit parallel data interface |
| Clock Frequency / Access Time | 166 MHz / 3.5 ns - guarantees deterministic read latency under industrial temperature (–40°C to +85°C) |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic without level shifters |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment in CPU or DSP subsystems |
| JTAG Support | IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TRST/TDO) - enables PCB interconnect test and in-system debugging |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 mA) - reduces dynamic power during idle cycles in telecom line cards |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems including base station control modules |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion - defines 128K-word addressing space |
| CLK | System Clock Input | Primary timing reference; all register transfers and burst sequencing synchronized to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode (CE=LOW, CS0=HIGH, CS1=LOW) enables device - supports multi-chip memory expansion |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter - suspends burst when HIGH |
| LBO | Burst Order Selection | Asynchronous static input (LOW = linear, HIGH = interleaved) - must remain stable during operation |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE + BWx enable byte-selectable 9-bit writes - supports partial-line updates in packet buffers |
| OE | Output Enable | Asynchronous control of I/O drivers - allows fast output disable independent of clock phase |
| ZZ | Sleep Mode Input | Asynchronous HIGH entry into low-power sleep - gates internal CLK and retains data with <35 mA supply current |
| TMS/TDI/TCK/TRST/TDO | JTAG Test Interface | IEEE 1149.1 boundary scan chain - enables structural test and debug without dedicated test pads |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Pins | 36-bit bidirectional bus with registered input/output paths - supports pipelined read/write with single-cycle deselect |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Delivers first data on CLK+1 and next three on consecutive edges - eliminates wait states in high-throughput memory interfaces |
| Single-Cycle Deselect | Device enters high-Z state within one clock cycle after chip disable - prevents bus contention in multi-SRAM systems |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation - simplifies controller design for burst and byte writes |
| Industrial Temperature Range | –40°C to +85°C operation with guaranteed 166 MHz performance - suitable for outdoor telecom and industrial PLC applications |
| JTAG Boundary Scan | Full IEEE 1149.1 implementation with optional TRST - enables production test coverage and field firmware validation |
Applications
| Network Packet Buffer | CPU Cache Subsystem |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with line-rate throughput requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame buffer with burst-aligned reads/writes and pipelined output staging. Use Value: 166 MHz clock rate and 3.5 ns access time sustain 5.9 Gbps aggregate bandwidth across 36-bit bus, meeting 10G Ethernet buffering needs. | Use Scenario: Secondary cache (L2) for RISC-based microprocessors in industrial controllers requiring deterministic timing. IC Role / Device Role / Timing Role: Synchronous SRAM providing cache line storage with burst counter and linear/interleaved addressing for cache line fills. Use Value: Single-cycle deselect and pipelined outputs reduce cache miss penalty; industrial temp rating ensures reliability in uncooled enclosures. |
| DSP Data Memory | Baseband Processing Buffer |
Use Scenario: Real-time FFT and filtering buffers in wireless infrastructure DSPs where memory latency directly impacts algorithm throughput. IC Role / Device Role / Timing Role: Low-jitter, clock-synchronized memory with burst counter enabling four-sample vector loads per address cycle. Use Value: Linear burst mode aligns with natural DSP data access patterns; 36-bit width matches common 32-bit + parity or extended-precision formats. | Use Scenario: Intermediate data storage between ADC/DAC and FPGA-based channel processing in LTE/5G remote radio units. IC Role / Device Role / Timing Role: JTAG-enabled SRAM used for configuration data retention and real-time buffer monitoring in RF front-end subsystems. Use Value: Boundary scan validates interconnect integrity post-deployment; sleep mode (via ZZ) reduces standby power in battery-backed modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166AXC | 128K × 36-bit, 166 MHz, 3.3V, no JTAG, 100-pin TQFP, commercial temp only (0°C to +70°C) | Lacks IEEE 1149.1 boundary scan and industrial temperature rating - unsuitable for field-deployed telecom hardware requiring in-system test | Select when JTAG and extended temperature are not required; lower cost for benign-environment compute modules. |
| AS7C33128P-166JCIN | 128K × 36-bit, 166 MHz, 3.3V, no burst counter or pipelined outputs, 100-pin TQFP, industrial temp (–40°C to +85°C) | Asynchronous burst control and non-pipelined outputs increase read latency by ≥2 cycles - limits throughput in cache-line streaming use cases | Select only for legacy designs where burst counter and pipelining are unused; verify timing margins with worst-case propagation delays. |
Compared with CY7C1362BV33-166AXC and AS7C33128P-166JCIN, the 71V35761SA166BGI uniquely combines industrial temperature operation, IEEE 1149.1 JTAG, and pipelined burst outputs - making it the only option for new designs requiring both field-testability and deterministic high-speed memory access.
Availability
71V35761SA166BGI is available at Aetrix Electronics and suitable for network packet buffering, CPU cache subsystems, DSP data memory, and baseband processing buffers requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for 71V35761SA166BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics.
The 71V35761SA166BGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for demanding applications in networking, telecommunications, and industrial computing where low-latency, burst-capable memory with robust debug and thermal resilience is essential.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V35761SA166BGI?
The 71V35761SA166BGI is rated for 166 MHz operation with a 3.5 ns clock access time under industrial temperature conditions (–40°C to +85°C). This specification is guaranteed across the full voltage range (VDD/VDDQ = 3.3 V ±5%) and reflects the time from CLK rising edge to valid output data. The device also supports 183 MHz (3.3 ns) and 200 MHz (3.1 ns) speeds in commercial grade variants, but the 71V35761SA166BGI part number specifically denotes the 166 MHz industrial version.
Does the 71V35761SA166BGI support both linear and interleaved burst modes, and how is the selection made?
Yes, the 71V35761SA166BGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is an asynchronous, static control - it must remain stable during active burst operation and is sampled at initialization. This feature enables optimization for different cache line mapping schemes in CPU or DSP subsystems.
What JTAG functionality does the 71V35761SA166BGI provide, and which pins are used?
The 71V35761SA166BGI implements full IEEE 1149.1 boundary scan with five dedicated pins: TMS (Test Mode Select), TDI (Test Data In), TCK (Test Clock), TDO (Test Data Out), and optional TRST (Test Reset). These signals enable structural testing of PCB interconnects, visibility into internal registers during debug, and in-system programming verification. TRST is optional and can be left floating; all JTAG pins have internal pull-ups except ZZ (internal pull-down).
How does the 71V35761SA166BGI enter and exit sleep mode, and what is the power consumption impact?
The 71V35761SA166BGI enters sleep mode asynchronously when the ZZ pin is driven HIGH, gating the internal clock and reducing supply current to ≤35 mA (IZZ). Exit requires ZZ LOW followed by tZZR ≥100 ns before valid accesses resume. During sleep, data retention is guaranteed. This mode cuts active power by >60% compared to standby (ISB1 = 35 mA), making it ideal for power-constrained telecom modules where periodic activity occurs.
What package type and pin count does the 71V35761SA166BGI use, and are there alternate packages for this part number?
The 71V35761SA166BGI is exclusively packaged in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-145, with 0.5 mm pitch and 14 mm × 20 mm body size. While the broader 71V35761 family includes 119-ball BGA and 165-fBGA variants, the "BGI" suffix explicitly denotes the 100-pin TQFP industrial-grade version. No other package options are assigned to the 71V35761SA166BGI part number.
71V35761SA166BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA166BGI FAQ
1.How can I place an order for 71V35761SA166BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA166BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA166BGI reliable?
The price and inventory of 71V35761SA166BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA166BGI is usually 5 days.
3.What payment methods are accepted for 71V35761SA166BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA166BGI transactions.
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4.How is shipping managed for 71V35761SA166BGI?
71V35761SA166BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA166BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA166BGI?
For technical support, including 71V35761SA166BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA166BGI requirements.
6.How does Aetrix verify that 71V35761SA166BGI is sourced from the original manufacturer or authorized distributors?
All 71V35761SA166BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA166BGI meets industry standards.
7.What is the process for return or replacement of 71V35761SA166BGI?
All 71V35761SA166BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGI part is unused and in its original packaging.
Return procedure for 71V35761SA166BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA166BGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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