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Renesas 71V35761SA166BGI8
- Part No.:
- 71V35761SA166BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA166BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA166BGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 166MHz operation (3.5ns clock access time), operates over –40°C to +85°C, and features JTAG boundary scan (IEEE 1149.1) for testability in high-reliability embedded systems.
For engineers reviewing the 71V35761SA166BGI8 datasheet, 71V35761SA166BGI8 pinout, 71V35761SA166BGI8 application, or 71V35761SA166BGI8 equivalent, key selection criteria include burst mode configuration (LBO), synchronous write control (GW/BWE/BWx), sleep mode (ZZ), and JEDEC-standard 100-pin TQFP packaging with 3.3V core/I/O supply.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter enables four-word pipelined reads per address, with linear or interleaved sequencing selected via the asynchronous LBO pin.
Write operations support global (GW) or byte-level (BW1–BW4) control under BWE gating, while self-timed write cycles eliminate external timing constraints. The device includes dedicated ADSP/ADSC inputs for processor/cache controller interface and optional IEEE 1149.1 JTAG for boundary scan - available only in SA variants like 71V35761SA166BGI8.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data bus with parity bits I/OP1–I/OP4 |
| Clock Frequency | 166 MHz max; enables 3.5 ns clock access time for deterministic timing in real-time systems |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage domain isolation |
| Operating Temperature | –40°C to +85°C industrial grade; validated for extended thermal cycling in telecom and industrial control |
| Power Consumption | ISB1 = 30 mA (standby), IZZ = 30 mA (full sleep); ZZ input reduces active current by >70% during idle periods |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration requires no runtime reconfiguration |
| JTAG Support | IEEE 1149.1 compliant TMS/TDI/TCK/TRST/TDO; optional TRST reset, internal pull-ups on all JTAG pins |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; pin 14 (VDD/NC) and pin 64 (ZZ) have specific biasing options per datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A17 decode 128K locations; latched on rising CLK edge with ADSP/ADSC |
| CLK | System Clock Input | Primary timing reference; all synchronous operations aligned to rising edge; no internal clock division |
| CE, CS0, CS1 | Chip Enable/Selects | Three-level chip select hierarchy: CE (active low), CS0 (active high), CS1 (active low); enables multi-chip memory expansion |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte enables; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register asynchronously to CLK |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; gates internal CLK and reduces ICC to 30 mA; retains data |
| TMS–TDO | JTAG Boundary Scan | IEEE 1149.1 TAP controller interface; TRST optional; internal pull-ups on all JTAG pins except ZZ (pull-down) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input/output paths; all I/Os driven synchronously on CLK rising edge |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), VSS (common ground); decoupling required per JEDEC TQFP layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Read | Four consecutive 36-bit words delivered on successive CLK edges after single address; eliminates inter-cycle dead time in high-throughput data streaming |
| Single-Cycle Deselect | Chip exits active state within one clock cycle upon CE/CS deassertion; prevents bus contention during rapid context switching |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse width control; simplifies FPGA/CPU interface design and reduces timing margin risk |
| Byte-Write Granularity | Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write; critical for cache line management |
| JTAG Boundary Scan | Full IEEE 1149.1 compliance enables board-level interconnect testing and in-system debug without physical probe access |
Applications
| Network Packet Buffering | Real-Time Signal Processing |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst read/write capability synchronized to packet clock domains. Use Value: 166MHz clock rate and pipelined outputs sustain ≥5.9 Gbps aggregate throughput (36-bit × 166MHz), matching 10G Ethernet line rates. | Use Scenario: Holding intermediate FFT or FIR filter coefficients and sample buffers in radar or software-defined radio basebands. IC Role / Device Role / Timing Role: Deterministic-access memory for DMA engines feeding DSP cores; single-cycle deselect enables rapid buffer switching between processing stages. Use Value: 3.5ns access time and burst counter reduce CPU/DMA wait states, improving real-time loop timing predictability. |
| Industrial PLC Data Logging | Avionics Flight Control Memory |
Use Scenario: Cyclic storage of sensor readings, actuator commands, and diagnostic logs in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing nonvolatile-equivalent retention during brownouts via ZZ sleep mode. Use Value: –40°C to +85°C operation and 30 mA sleep current ensure reliable logging across temperature extremes with minimal power budget impact. | Use Scenario: Storing flight-critical control law parameters and sensor fusion results in DO-254-compliant avionics modules. IC Role / Device Role / Timing Role: JTAG-enabled memory supporting structural test and traceability requirements for airborne hardware certification. Use Value: IEEE 1149.1 boundary scan allows automated fault detection on densely routed PCBs without adding test points or probes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166BZI | 128K × 36-bit, 166MHz, 3.3V; no JTAG; uses different burst control (MODE pin vs. LBO); 119-ball BGA only | Lacks IEEE 1149.1 testability; requires BGA layout and rework capability; no TQFP option | Select when JTAG is unnecessary and BGA packaging aligns with system density goals. |
| AS7C33128P-166JCIN | 128K × 36-bit, 166MHz, 3.3V; no JTAG; supports linear burst only; 100-pin TQFP; lower standby current (25 mA) | Fixed burst mode limits flexibility in cache-coherent designs; lacks ADV/ADSC dual-address-status interface | Select when cost sensitivity outweighs burst-mode flexibility and JTAG is not required for production test. |
Compared with CY7C1362BV33-166BZI and AS7C33128P-166JCIN, the 71V35761SA166BGI8 uniquely combines TQFP packaging, IEEE 1149.1 JTAG, and dual-burst-mode selection - enabling testable, field-upgradable, and thermally robust memory subsystems without BGA assembly complexity.
Availability
71V35761SA166BGI8 is available at Aetrix Electronics and suitable for network packet buffering, real-time signal processing, industrial PLC data logging, and avionics flight control memory requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 71V35761SA166BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V35761 family was designed to deliver deterministic, low-latency memory performance for bandwidth-intensive embedded systems where pipelined burst access, JTAG testability, and industrial temperature resilience are mandatory.
FAQ
What is the maximum clock frequency supported by the 71V35761SA166BGI8?
The 71V35761SA166BGI8 supports up to 166 MHz operation with a guaranteed 3.5 ns clock access time under industrial temperature conditions (–40°C to +85°C). This rating is validated per AC Electrical Characteristics Table 16 in the official IDT datasheet revision May.18.20. The 71V35761SA166BGI8 achieves this performance using a high-speed CMOS process and registered I/O architecture.
Does the 71V35761SA166BGI8 support both linear and interleaved burst modes?
Yes, the 71V35761SA166BGI8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) input pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved burst order is used. This selection is static and must remain stable during device operation, as confirmed in Pin Definitions Table 02 and Burst Sequence Tables 14–15 of the datasheet.
Is JTAG boundary scan functionality available on the 71V35761SA166BGI8?
Yes, JTAG boundary scan (IEEE 1149.1 compliant) is a defined feature of the "SA" variant, including the 71V35761SA166BGI8. Pins TMS, TDI, TCK, TDO, and optional TRST are implemented per functional block diagram and pin configuration drawings. Internal pull-ups are present on all JTAG inputs except ZZ, which has an internal pull-down.
What package type is used for the 71V35761SA166BGI8?
The 71V35761SA166BGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm with 0.5 mm lead pitch. This is explicitly stated in the Features section and verified in Pin Configuration Drawing 02 (PKG100). The "BGI8" suffix denotes this TQFP packaging with industrial temperature grading.
How does the 71V35761SA166BGI8 enter and exit sleep mode?
The 71V35761SA166BGI8 enters full sleep mode when the ZZ pin is driven HIGH asynchronously; this gates the internal clock and reduces supply current to 30 mA while retaining data. Recovery requires ZZ to return LOW and tZZR ≥ 100 ns before the next valid access. The device must be deselected during power-up from sleep mode, as specified in Timing Parameter Table 16 and Sleep Mode Waveform Figure 12.
71V35761SA166BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA166BGI8 FAQ
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Please submit a Request for Quotation (RFQ) for 71V35761SA166BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 71V35761SA166BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA166BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA166BGI8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA166BGI8?
All 71V35761SA166BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA166BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA166BGI8 part is unused and in its original packaging.
Return procedure for 71V35761SA166BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA166BGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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