Renesas 71V35761SA166BQG

Overview

71V35761SA166BQG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom systems.

For engineers reviewing the 71V35761SA166BQG datasheet, 71V35761SA166BQG pinout, 71V35761SA166BQG application, or 71V35761SA166BQG equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep-mode current (30mA), TQFP-100 vs. fBGA-165 package compatibility, and JTAG signal mapping for production test integration.

Technical Context

The 71V35761SA166BQG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data on the second clock edge and subsequent data on successive rising edges.

Burst order is determined by the asynchronous LBO pin (LOW = linear, HIGH = interleaved), while ADV enables burst advance and ADSP/ADSC provide processor- or cache-controller–driven address latching. The device supports byte-selectable writes (BW1–BW4), global write (GW), and self-timed write cycles gated by BWE and CE.

Key Specifications

Pinout & Package

71V35761SA166BQG is packaged in a 165-ball fine-pitch ball grid array (fBGA), JEDEC-compliant, with 1.0 mm ball pitch and 13 mm × 15 mm body size. Pinout validated per IDT document 5301 tbl 17 and drw 04.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166BZXI and AS7C3256P-166JCIN, the 71V35761SA166BQG uniquely combines JTAG testability, pipelined burst outputs, and single-cycle deselect-enabling lower system latency and higher test coverage in telecom infrastructure designs.

Availability

71V35761SA166BQG is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, and radar signal processors requiring stable component supply, long-term lifecycle support, and traceable green-part sourcing.

Supply support for 71V35761SA166BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 71V35761SA166BQG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, high-throughput buffering in telecom infrastructure, military radar, and high-performance computing subsystems.

FAQ

What is the maximum operating frequency of the 71V35761SA166BQG?

The 71V35761SA166BQG is rated for 166 MHz operation (tCYC = 6 ns) across the industrial temperature range (–40°C to +85°C). This speed is guaranteed with VDD and VDDQ at 3.3 V ±5%, and all AC timing parameters-including tCD = 3.5 ns and tOE = 3.5 ns-meet specification under these conditions. The "166" in the part number explicitly denotes this speed grade.

Does the 71V35761SA166BQG support both linear and interleaved burst modes?

Yes, the 71V35761SA166BQG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11 on A1/A0). When LBO is HIGH, it performs interleaved burst (00→01→11→10). This behavior is defined in the Interleaved and Linear Burst Sequence Tables (5301 tbl 14–15) and applies identically across all supported speeds.

What is the function of the ZZ pin on the 71V35761SA166BQG?

The ZZ pin on the 71V35761SA166BQG is an asynchronous sleep-mode enable. When driven HIGH, it gates the internal clock and reduces supply current to IZZ = 30 mA (max), while retaining full data integrity. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW. This feature is essential for power-gating during packet idle periods in telecom and networking applications.

Which package type does the 71V35761SA166BQG use, and what are its key mechanical attributes?

The 71V35761SA166BQG uses a 165-ball fine-pitch BGA (fBGA) package, designated BQG165 per IDT documentation. It has a 13 mm × 15 mm body size, 1.0 mm ball pitch, and conforms to JEDEC MO-244. Ball assignments for JTAG signals (TMS/TDI/TCK/TRST/TDO) are fixed per table 5301 tbl 17, enabling reliable test fixture design.

How does the 71V35761SA166BQG handle byte-write operations?

The 71V35761SA166BQG supports granular byte writes using four dedicated 9-bit enables (BW1–BW4), a byte-write enable (BWE), and global write (GW). When BWE is LOW, BWx signals control individual 9-bit segments (e.g., BW1 → I/O0–I/O7 + I/OP1). GW overrides BWx to write all 36 bits simultaneously. All write controls are synchronous to CLK and validated in the Synchronous Write Function Truth Table (5301 tbl 12).