Renesas 71V35761SA166BQG8

Overview

71V35761SA166BQG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO, features JTAG boundary scan (IEEE 1149.1), and is packaged in a 165-ball fine-pitch BGA (BQG). It serves high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V35761SA166BQG8 datasheet, 71V35761SA166BQG8 pinout, 71V35761SA166BQG8 application, or 71V35761SA166BQG8 equivalent, key selection considerations include its 166MHz timing grade, 36-bit data width, JTAG-enabled BQG package, industrial temperature support (–40°C to +85°C), and burst-mode compatibility with cache controllers and processors requiring pipelined read cycles.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst address counter generates four sequential addresses per initial address, with output pipelining delivering first data one clock cycle after the rising CLK edge.

Burst order is selected statically via LBO (linear or interleaved), while ADV controls burst advancement; ADSP/ADSC provide processor- or cache-controller–driven address latching. The device supports byte-level writes (BW1–BW4), global write (GW), and asynchronous sleep mode via ZZ input.

Key Specifications

Pinout & Package

71V35761SA166BQG8 is housed in a 165-ball fine-pitch ball grid array (fBGA) package, designated BQG, with 1.0 mm ball pitch and JEDEC-standard footprint (13 mm × 15 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166BZI and AS7C331024P-166BIN, the 71V35761SA166BQG8 uniquely combines JTAG testability, pipelined burst reads, and industrial-grade BQG packaging-enabling higher system reliability, faster cache-line fill rates, and simplified production test coverage.

Availability

71V35761SA166BQG8 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, and industrial PLC data loggers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761SA166BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V35761SA166BQG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-oriented memory subsystems in infrastructure equipment where deterministic timing and testability are critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761SA166BQG8?

The 71V35761SA166BQG8 is rated for 166 MHz operation with a clock-to-data access time (tCD) of 3.5 ns. This specification applies across the industrial temperature range (–40°C to +85°C) under VDD/VDDQ = 3.3 V ±5%. The device also supports 183 MHz (3.3 ns) and 200 MHz (3.1 ns) speed grades in commercial temperature range only.

Does the 71V35761SA166BQG8 support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V35761SA166BQG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved burst order is activated. LBO is a static configuration pin and must remain stable during device operation to prevent burst counter misalignment.

What package type and ball count does the 71V35761SA166BQG8 use, and is it RoHS-compliant?

The 71V35761SA166BQG8 uses a 165-ball fine-pitch ball grid array (fBGA) package, designated BQG, with 1.0 mm ball pitch and JEDEC-standard footprint. Per IDT documentation, this variant is offered as a green (RoHS-compliant, lead-free) part, meeting JEDEC J-STD-609 Category 2a marking requirements.

How does the JTAG interface on the 71V35761SA166BQG8 function, and which pins are dedicated to it?

The 71V35761SA166BQG8 implements a full IEEE 1149.1–compliant boundary scan chain. Dedicated pins include TMS, TDI, TCK, TDO, and optional TRST-all located on the BQG package per the pinout diagram. All JTAG pins feature internal pull-ups except TRST (optional) and ZZ (internal pull-down), simplifying board-level implementation.

What is the power consumption behavior of the 71V35761SA166BQG8 in active, standby, and sleep modes?

In active operation at 166 MHz, the 71V35761SA166BQG8 draws up to 330 mA (IDDT). In CMOS standby (ISB1), current drops to 30 mA; with clock running but deselected (ISB2), it consumes 110 mA. When ZZ is asserted HIGH, full sleep mode reduces current to ≤35 mA while maintaining data retention-critical for battery-backed applications.