Renesas 71V35761SA166BQGI

Overview

71V35761SA166BQGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 166MHz operation (3.5ns clock access time), industrial temperature range (–40°C to +85°C), and optional IEEE 1149.1 JTAG boundary scan. Used in high-speed networking and embedded control buffers requiring deterministic latency.

For engineers reviewing the 71V35761SA166BQGI datasheet, 71V35761SA166BQGI pinout, 71V35761SA166BQGI application, or 71V35761SA166BQGI equivalent, key selection criteria include burst mode configuration (LBO), sleep mode control (ZZ), JTAG availability (TMS/TDI/TCK/TRST/TDO), and compatibility with 3.3V I/O systems requiring pipelined read timing and self-timed write cycles.

Technical Context

The 71V35761SA166BQGI implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter generates four sequential addresses per initial address, with order determined by LBO (linear vs. interleaved) and advanced via ADV.

Burst operations support pipelined reads with one-cycle output latency, while writes are self-timed using GW, BWE, and BW1–BW4 for full- or byte-level writes. Sleep mode is entered asynchronously via ZZ HIGH, reducing supply current to ≤35mA while retaining data.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 165-ball fine-pitch BGA (fBGA), footprint code BQG165, with 1.0 mm ball pitch and 13 mm × 15 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1375DV33-166BZXI and AS7C33128P36A-166BIN, the 71V35761SA166BQGI uniquely combines JTAG testability, ZZ-controlled sleep, and pipelined burst reads-enabling both production test coverage and energy-efficient operation in space-constrained industrial systems.

Availability

71V35761SA166BQGI is available at Aetrix Electronics and suitable for network packet buffering, real-time control memory, baseband signal processing, and avionics data acquisition requiring stable component supply across industrial temperature ranges and long product lifecycles.

Supply support for 71V35761SA166BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and high-performance computing solutions, now part of Renesas Electronics.

The 71V35761SA166BQGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for applications demanding deterministic latency, burst bandwidth, and industrial-grade reliability in communications and embedded control systems.

FAQ

What is the maximum operating frequency of the 71V35761SA166BQGI?

The 71V35761SA166BQGI is rated for 166 MHz operation, corresponding to a 6 ns clock cycle time and 3.5 ns clock-to-data (tCD) access time. This speed is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device also supports 183 MHz and 200 MHz variants in commercial grade, but the SA166 suffix confirms the 166 MHz industrial specification.

Does the 71V35761SA166BQGI support JTAG boundary scan?

Yes, the 71V35761SA166BQGI includes an optional IEEE 1149.1-compliant JTAG boundary scan interface. Pins TMS, TDI, TCK, TDO, and optional TRST are implemented on the 165-ball fBGA package. TRST is not required, as the TAP controller resets automatically at power-up and via TMS/TCK sequences per the standard.

How does burst mode work on the 71V35761SA166BQGI?

Burst mode on the 71V35761SA166BQGI delivers four consecutive 36-bit words per address using an internal binary counter. The sequence order (linear or interleaved) is selected by the LBO pin. ADV must be LOW to advance the counter; holding ADV HIGH suspends the burst. First-word output is pipelined, appearing one clock cycle after the initial address is latched.

What is the function of the ZZ pin on the 71V35761SA166BQGI?

The ZZ pin on the 71V35761SA166BQGI controls asynchronous entry into full sleep mode. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 mA while retaining memory contents. ZZ has an internal pull-down, so it defaults to active mode if left unconnected. Recovery requires tZZR ≥100 ns after ZZ returns LOW.

Is the 71V35761SA166BQGI compatible with 3.3V-only systems?

Yes, the 71V35761SA166BQGI operates exclusively from 3.3 V supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O. All inputs accept 3.3V-compatible logic levels (VIH ≥2.0 V, VIL ≤0.8 V), and outputs drive 3.3V CMOS levels. No 5V tolerance or mixed-voltage support is provided.