Renesas 71V35761SA166BQGI8

Overview

71V35761SA166BQGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-reliability embedded systems.

For engineers reviewing the 71V35761SA166BQGI8 datasheet, 71V35761SA166BQGI8 pinout, 71V35761SA166BQGI8 application, or 71V35761SA166BQGI8 equivalent, this device delivers deterministic low-latency memory access for cache-coherent subsystems, network packet buffers, and real-time DSP data paths requiring burst-aligned, pipelined read/write cycles and industrial-temperature operation.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state and ADV timing.

The device integrates self-timed write logic gated by GW, BWE, and BW1–BW4, enabling byte-selectable or global writes. Pipelined output registers deliver first-data-on-next-clock-edge timing, while ZZ enables asynchronous sleep mode with guaranteed data retention and <35mA IZZ current.

Key Specifications

Pinout & Package

71V35761SA166BQGI8 is packaged in a 165-ball fine-pitch ball grid array (BQG165), compliant with JEDEC MO-245. The package provides 36 I/O pins (I/O0–I/O31, I/OP1–I/OP4), dual power domains (VDD core, VDDQ I/O), and dedicated JTAG signals (TMS, TDI, TCK, TDO, TRST).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166BZXI and AS7C33128P-166BIN, the 71V35761SA166BQGI8 uniquely combines JTAG testability, industrial temperature support, pipelined burst reads, and hardware-managed sleep mode-enabling higher system integration and reduced test infrastructure cost in mission-critical embedded platforms.

Availability

71V35761SA166BQGI8 is available at Aetrix Electronics and suitable for network infrastructure, real-time DSP subsystems, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-temperature performance.

Supply support for 71V35761SA166BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 71V35761SA166BQGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic, low-latency memory access in cache-coherent subsystems and packet-processing pipelines.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761SA166BQGI8?

The 71V35761SA166BQGI8 is rated for 166 MHz operation with a clock cycle time (tCYC) of 6 ns and a clock-to-data valid delay (tCD) of 3.5 ns. This specification applies across the industrial temperature range (–40°C to +85°C) and is guaranteed under VDD = 3.3 V ±5% and VDDQ = 3.3 V ±5% conditions.

Does the 71V35761SA166BQGI8 support both linear and interleaved burst modes, and how is selection implemented?

Yes, the 71V35761SA166BQGI8 supports both linear and interleaved 4-word burst sequences. Selection is controlled by the LBO (Linear Burst Order) input: LBO = LOW configures linear order (00→01→10→11), while LBO = HIGH selects interleaved order (00→01→11→10). LBO is asynchronous and must remain static during burst operation.

What power-saving features does the 71V35761SA166BQGI8 provide, and how is sleep mode activated?

The 71V35761SA166BQGI8 implements asynchronous sleep mode via the ZZ input. Driving ZZ HIGH disables the internal clock and reduces supply current to ≤35 mA (IZZ) while guaranteeing data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume.

Is JTAG boundary scan supported on the 71V35761SA166BQGI8, and which package types include it?

Yes, the 71V35761SA166BQGI8 includes IEEE 1149.1-compliant JTAG boundary scan. It is available only in BGA packages-including the 165-ball fine-pitch BGA (BQG165) used by the 71V35761SA166BQGI8-and not offered in TQFP variants. TRST is optional and internally pulled up.

How many byte-write enable signals does the 71V35761SA166BQGI8 support, and what data width does each control?

The 71V35761SA166BQGI8 supports four independent byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment: BW1 → I/O0–I/O7 + I/OP1; BW2 → I/O8–I/O15 + I/OP2; BW3 → I/O16–I/O23 + I/OP3; BW4 → I/O24–I/O31 + I/OP4. BWE must be LOW to activate them.