Renesas 71V35761SA183BG

Overview

71V35761SA183BG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) in SA variants. Used in high-speed cache and networking buffer applications requiring deterministic timing and low-latency data throughput.

For engineers reviewing the 71V35761SA183BG datasheet, 71V35761SA183BG pinout, 71V35761SA183BG application, or 71V35761SA183BG equivalent, key selection criteria include burst mode control (LBO), sleep mode (ZZ), JTAG testability (TMS/TDI/TCK/TRST/TDO), and compatibility with 3.3V I/O systems requiring pipelined read cycles and self-timed write with byte-level granularity.

Technical Context

The 71V35761SA183BG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter generates four sequential addresses per initial address, with order determined by LBO state-linear (LBO = LOW) or interleaved (LBO = HIGH).

Burst operation is initiated by ADSP/ADSC and advanced by ADV; writes are controlled synchronously via GW (global) or BWE/BW1–BW4 (byte-select), while OE enables asynchronous output gating. Sleep mode is entered asynchronously via ZZ HIGH, reducing supply current to ≤35mA.

Key Specifications

Pinout & Package

Packaged in a 119-ball BGA (BG119, JEDEC MO-207AC) with 1.0 mm ball pitch and 13 mm × 13 mm body size. Pinout validated per IDT 71V35761 SA-series BGA mechanical drawing (5301 drw 04).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18-167BZI and AS7C3256P-15JIN, the 71V35761SA183BG uniquely delivers JTAG testability, hardware-selectable burst order, and true pipelined burst reads - critical for high-reliability, high-throughput embedded systems where timing determinism and production test coverage are mandatory.

Availability

71V35761SA183BG is available at Aetrix Electronics and suitable for high-speed network buffers, real-time DSP caches, industrial motion controllers, and avionics FMS units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761SA183BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.

The 71V35761SA183BG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive embedded systems requiring pipelined burst access, low-latency deselect, and industrial-grade reliability.

FAQ

What is the maximum operating frequency of the 71V35761SA183BG?

The 71V35761SA183BG is rated for 183 MHz operation (5.5 ns clock cycle time) across the industrial temperature range (–40°C to +85°C). This speed is guaranteed with tCD ≤ 3.3 ns and meets all AC timing parameters in the official IDT datasheet revision May.18.20. The 71V35761SA183BG does not support 200 MHz operation - that rating applies only to commercial-grade variants (e.g., 71V35761S183BG).

Does the 71V35761SA183BG support both linear and interleaved burst modes?

Yes, the 71V35761SA183BG supports both burst modes via the LBO (Linear/Interleaved Burst Order) input. When LBO is driven LOW, the device executes linear burst sequences (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation - the 71V35761SA183BG does not permit dynamic switching mid-burst.

Is JTAG boundary scan available on the 71V35761SA183BG?

Yes, JTAG boundary scan (IEEE 1149.1) is fully supported on the 71V35761SA183BG. Pins TMS, TDI, TCK, TRST (optional), and TDO are assigned in the 119-ball BGA package (BG119), as confirmed in IDT's pin configuration drawing 5301 drw 04. This feature is exclusive to "SA" suffix variants and is not present in base "S" versions.

What is the function of the ZZ pin on the 71V35761SA183BG?

The ZZ pin on the 71V35761SA183BG controls asynchronous sleep mode. When ZZ is driven HIGH, the internal clock is gated, supply current drops to ≤35 mA (industrial), and all I/O pins enter high-impedance state - while memory contents are retained. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW, and the device must be deselected during wake-up, as specified in the 71V35761SA183BG AC characteristics table.

How many byte-write enable signals does the 71V35761SA183BG provide?

The 71V35761SA183BG provides four dedicated byte-write enable inputs: BW1, BW2, BW3, and BW4. Each controls a 9-bit data segment - BW1 for I/O0–I/O7 and I/OP1, BW2 for I/O8–I/O15 and I/OP2, and so on. These operate only when BWE is LOW; when BWE is HIGH, only GW (Global Write Enable) is active. This structure enables precise 9-bit granularity writes without affecting other bytes in the 36-bit word.