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Renesas 71V35761SA183BG8
- Part No.:
- 71V35761SA183BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA183BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,127
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Product details
Overview
71V35761SA183BG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) in SA version. Used in high-speed networking and embedded control buffers requiring deterministic latency.
For engineers reviewing the 71V35761SA183BG8 datasheet, 71V35761SA183BG8 pinout, 71V35761SA183BG8 application, or 71V35761SA183BG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep mode current (30mA), TQFP-100/BGA-119/fBGA-165 package compatibility, and industrial temperature support (–40°C to +85°C).
Technical Context
This SRAM implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on CLK rising edge. Burst sequencing is managed by an internal binary counter synchronized to ADV, with LBO selecting linear or interleaved address order - both fully static and non-volatile during operation.
Write functionality supports global (GW) and byte-level (BW1–BW4 + BWE) control, with self-timed write cycles gated by CE/CS0/CS1 enables. JTAG interface (TMS/TDI/TCK/TRST/TDO) is optional and implemented only in SA variants, with TRST available exclusively in BGA packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), supporting four 9-bit byte writes per cycle |
| Max Clock Frequency | 183 MHz - enables 3.3 ns clock-to-data output delay in industrial temp range |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate rails reduce noise coupling |
| Sleep Mode Current | IZZ = 30 mA max - achieved when ZZ = HIGH, retaining full data integrity |
| Burst Modes | Linear or interleaved via LBO pin - determines A0/A1 address progression for cache-line alignment |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems without derating |
| JTAG Support | IEEE 1149.1 compliant (SA version only) - enables board-level test and debug without external probes |
Pinout & Package
Packaged in JEDEC-standard 119-ball BGA (BG119, BGG119 footprint), with 3.3V core/I/O supplies, ground planes, and dedicated VDDQ pins adjacent to I/O banks for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus - latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | Clock Input | Single-ended system clock reference - all timing derived from rising edge; no internal PLL |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) overrides byte enables; BWE gates BWx signals for selective 9-bit writes |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal counter; ADSP (processor) and ADSC (cache) load address register independently |
| LBO | Burst Order Select | Asynchronous static input - LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Sleep Mode Enable | Asynchronous HIGH input - disables internal clock tree and reduces supply current to 30 mA |
| TMS/TDI/TCK/TRST/TDO | JTAG Interface | IEEE 1149.1 boundary scan - TRST optional, internal pull-up; TDO output driven synchronously |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus - registered input/output paths ensure setup/hold compliance at 183 MHz |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First data word appears one clock cycle after address latch - eliminates wait states in burst reads |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period - critical for multi-SRAM arbitration in shared buses |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation - simplifies controller design |
| Byte-Write Granularity | Four independent 9-bit write lanes (BW1–BW4) - enables partial-word updates without read-modify-write |
| JTAG Boundary Scan (SA) | Fully IEEE 1149.1-compliant test access - supports interconnect testing and in-system programming |
Applications
| High-Speed Network Switch Buffer | Industrial PLC Real-Time Data Cache |
|---|---|
Use Scenario: Storing packet header metadata and forwarding tables in Layer 2/L3 switching ASICs requiring sub-4ns access. IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly to switch fabric controller via 36-bit parallel bus. Use Value: 183MHz pipelined read delivers four consecutive 36-bit words in 21.9ns - matching 10Gbps line-rate processing windows. | Use Scenario: Holding real-time I/O status, motion control parameters, and safety logic state in programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic low-latency scratchpad memory for cyclic executive tasks running at 1kHz+ update rates. Use Value: Single-cycle deselect and ZZ sleep mode enable rapid context switching and <100ns wake-from-sleep response for fault recovery. |
| Avionics Flight Control Data Logger | Medical Imaging Frame Buffer |
Use Scenario: Capturing sensor fusion outputs (IMU, GPS, air data) at 10kHz with guaranteed retention during power transients. IC Role / Device Role / Timing Role: Radiation-tolerant buffer with data retention in ZZ sleep mode during brown-out events. Use Value: IZZ = 30 mA at –40°C to +85°C ensures >10-year data retention under battery backup with minimal energy drain. | Use Scenario: Temporarily storing uncompressed 12-bit CT/MRI pixel streams (up to 120 fps) before compression and storage. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing to FPGA-based image processor via burst-optimized bus. Use Value: Linear burst mode aligns with 64-byte cache lines - achieving 656 MB/s effective throughput (183MHz × 36 bits). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-183BZXI | 128K × 36, 3.3V, 183MHz - no JTAG, TQFP-100 only, no ZZ sleep mode | Lacks boundary scan and deep sleep - unsuitable for field-programmable or low-power portable systems | Select when JTAG and ultra-low standby current are not required; lower cost for fixed-function designs |
| AS7C331025B-183BIN | 128K × 36, 3.3V, 183MHz - supports linear burst only, no interleaved mode, BGA-119 only | Missing LBO-selectable burst order - limits cache coherency optimization in multiprocessor systems | Choose for space-constrained BGA layouts where interleaved burst is unnecessary |
Compared with CY7C1371DV33-183BZXI and AS7C331025B-183BIN, the 71V35761SA183BG8 uniquely combines JTAG debug capability, dual-burst-mode flexibility, and industrial-grade sleep mode - making it optimal for upgradable, safety-critical, and thermally demanding deployments.
Availability
71V35761SA183BG8 is available at Aetrix Electronics and suitable for high-speed network switches, industrial PLCs, avionics data loggers, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761SA183BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions, now part of Renesas Electronics.
The 71V35761 family was designed for deterministic, low-latency buffering in real-time communication and control systems - emphasizing burst efficiency, power-aware operation, and testability in mission-critical hardware.
FAQ
What is the maximum operating frequency of the 71V35761SA183BG8 and under what conditions is it guaranteed?
The 71V35761SA183BG8 is guaranteed to operate at 183 MHz with 3.3 ns clock-to-data access time across the industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply. This rating applies when using pipelined read mode with OE asserted, and assumes proper PCB layout, termination, and decoupling per IDT's AN-xxx guidelines. The 200 MHz speed grade is commercial-only (0°C to +70°C).
Does the 71V35761SA183BG8 support both linear and interleaved burst modes, and how is the selection implemented?
Yes, the 71V35761SA183BG8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) input. When LBO is LOW, the device uses linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and static - it must remain stable during burst operation and is sampled at initialization.
What is the function of the ZZ pin on the 71V35761SA183BG8, and what power savings does it provide?
The ZZ pin on the 71V35761SA183BG8 enables full sleep mode: when driven HIGH, it gates the internal clock tree and reduces supply current to IZZ = 30 mA max (industrial grade). Data is retained, and wake-up occurs synchronously on the next valid CLK edge after ZZ returns LOW. This mode is essential for power-constrained applications like portable avionics or battery-backed controllers.
Is JTAG boundary scan available on all variants of the 71V35761SA183BG8, and which pins are used?
JTAG boundary scan is available only on SA-suffix variants like the 71V35761SA183BG8, per IEEE 1149.1. Pins TMS, TDI, TCK, TDO, and optional TRST (ball U7 in BGG119) implement the interface. TRST is not bonded in TQFP packages and is optional in BGA - if unused, it may be left floating due to internal pull-up.
How does the 71V35761SA183BG8 handle byte-level writes, and what control signals are involved?
The 71V35761SA183BG8 supports true byte-level writes using BWE (byte write enable) and four BWx signals (BW1–BW4), each controlling a 9-bit data segment (I/O0–7+I/OP1, etc.). When BWE is LOW, active BWx signals gate corresponding write drivers; GW overrides all byte enables for full 36-bit writes. All write controls are synchronous to CLK rising edge.
71V35761SA183BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA183BG8 FAQ
1.How can I place an order for 71V35761SA183BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA183BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA183BG8 reliable?
The price and inventory of 71V35761SA183BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA183BG8 is usually 5 days.
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Once your 71V35761SA183BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA183BG8?
For technical support, including 71V35761SA183BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA183BG8 requirements.
6.How does Aetrix verify that 71V35761SA183BG8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA183BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BG8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA183BG8?
All 71V35761SA183BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA183BG8 part is unused and in its original packaging.
Return procedure for 71V35761SA183BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA183BG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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