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Renesas 71V35761SA183BGG
- Part No.:
- 71V35761SA183BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA183BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,210
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Product details
Overview
71V35761SA183BGG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom control plane applications.
For engineers reviewing the 71V35761SA183BGG datasheet, 71V35761SA183BGG pinout, 71V35761SA183BGG application, or 71V35761SA183BGG equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep mode current (30–35mA), TQFP/BGA package compatibility, and JTAG-enabled debug support in industrial-temperature systems.
Technical Context
The 71V35761SA183BGG implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on CLK rising edge. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state-linear (LBO = LOW) or interleaved (LBO = HIGH).
Burst operation is initiated by ADSP/ADSC low and advanced by ADV low; write cycles support global (GW) or byte-level (BW1–BW4 + BWE) control, while OE enables asynchronous output gating. The SA variant integrates optional IEEE 1149.1 JTAG interface with TMS/TDI/TCK/TRST/TDO pins active in BGA packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), supporting 36-bit parallel data paths for high-throughput buffering. |
| Clock Frequency / Access Time | 183 MHz / 3.3 ns - guarantees deterministic read latency for real-time packet processing pipelines. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic without level shifters. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache-line alignment in RISC processor interfaces. |
| Sleep Mode Current | IZZ = 30–35 mA (industrial temp) - reduces system power during idle cycles without data loss. |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TRST/TDO - enables board-level structural testing and in-system debugging. |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded control and base station equipment. |
Pinout & Package
Packaged in a JEDEC-standard 119-ball BGA (BGG) with 0.8 mm pitch, footprint code BGG119. Pinout optimized for signal integrity in high-speed memory buses with distributed VDDQ/VSS pairs and dedicated I/O banks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion - supports full 128K depth addressing. |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) are edge-triggered - defines maximum 183 MHz operational frequency. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) or byte-selectable writes (BWE + BWx) enable precise 9-bit sub-word updates - avoids full-word overwrites in protocol header manipulation. |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal counter; ADSP (processor) and ADSC (cache) load initial address - enables seamless integration with CPU/cache coherency logic. |
| LBO | Burst Order Select | Static input defining burst sequence (linear vs. interleaved) - must remain stable during operation to prevent address misalignment. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | Boundary-scan chain for interconnect testing and device programming - TRST optional; internal pull-up allows floating if unused. |
| ZZ | Asynchronous Sleep Enable | High-active input that gates internal CLK and reduces supply current to IZZ - enables rapid entry/exit from low-power state without reset. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input/output paths - pipelined outputs deliver data one cycle after address latch for predictable timing closure. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Reads | Delivers four consecutive 36-bit words per address with 1-cycle pipeline delay - eliminates wait states in streaming data paths. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle - enables rapid context switching between memory banks in multi-processor systems. |
| Byte-Write Granularity | Four independent 9-bit write enables (BW1–BW4) with BWE gating - permits atomic updates of protocol fields without disturbing adjacent data. |
| JTAG Boundary Scan | Fully compliant IEEE 1149.1 interface with optional TRST - supports automated PCB test coverage and in-field diagnostics. |
| Low-Power Sleep Mode | IZZ ≤ 35 mA at –40°C to +85°C - maintains data retention while cutting dynamic power by >70% versus active operation. |
Applications
| Telecom Line Cards | Network Processor Buffers |
|---|---|
Use Scenario: Storing packet descriptors and metadata in OC-192/STM-64 line interface units requiring deterministic latency. IC Role / Device Role / Timing Role: High-speed buffer between SERDES and network processor, synchronized to 183 MHz system clock with pipelined burst reads. Use Value: Single-cycle deselect and 3.3 ns access enable real-time packet classification without pipeline stalls. | Use Scenario: Temporary storage of fragmented IP packets during deep packet inspection in multi-core NPU clusters. IC Role / Device Role / Timing Role: Shared SRAM resource accessed via AXI-like bus with burst-mode addressing for cache-line-aligned transfers. Use Value: Linear burst mode (LBO = LOW) matches 64-byte cache line size, reducing address bus toggling by 75%. |
| Radar Signal Processing | Industrial PLC Memory Expansion |
Use Scenario: Capturing digitized IF samples from high-speed ADCs in phased-array radar front ends. IC Role / Device Role / Timing Role: Synchronous FIFO replacement with burst write capability for continuous streaming into DSP memory maps. Use Value: Byte-write enables (BW1–BW4) allow partial updates of timestamp and channel ID fields without corrupting sample data. | Use Scenario: Extending program/data memory in safety-critical PLC controllers operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing non-volatile-retentive scratchpad for ladder logic execution stacks. Use Value: ZZ sleep mode reduces standby power to 35 mA while guaranteeing data retention - extends battery backup runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 128K × 36, 167 MHz max, no JTAG, 100-pin TQFP only | Lacks IEEE 1149.1 test interface and BGA packaging - unsuitable for high-density JTAG-debugged boards | Select when JTAG is unnecessary and TQFP layout is fixed; verify 167 MHz timing margins against 183 MHz requirement. |
| AS7C33128P-15JIN | 128K × 36, 15 ns async access, no burst counter or pipelining | Asynchronous architecture eliminates burst mode and clock-domain synchronization - incompatible with pipelined read protocols | Choose only for legacy async bus upgrades; cannot replace 71V35761SA183BGG in burst-dependent designs. |
Compared with CY7C1362BV33-167AXC and AS7C33128P-15JIN, the 71V35761SA183BGG uniquely delivers 183 MHz burst performance with integrated JTAG and industrial-temperature BGA packaging - essential for next-generation telecom and defense electronics where testability and thermal robustness are mandatory.
Availability
71V35761SA183BGG is available at Aetrix Electronics and suitable for telecom infrastructure, radar signal processing, and industrial PLC applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-temperature operation.
Supply support for 71V35761SA183BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V35761SA183BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in network processors, baseband units, and real-time embedded controllers.
FAQ
What is the maximum operating frequency of the 71V35761SA183BGG?
The 71V35761SA183BGG is rated for 183 MHz operation with a 3.3 ns clock access time under industrial temperature conditions (–40°C to +85°C). This speed is validated across VDD and VDDQ at 3.3 V ±5%, and requires adherence to specified setup/hold times for all synchronous inputs relative to CLK.
Does the 71V35761SA183BGG support both linear and interleaved burst modes?
Yes, the 71V35761SA183BGG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (00→01→10→11), while LBO = HIGH selects interleaved (00→01→11→10). The mode must be statically configured before operation and cannot change dynamically during burst sequences.
Is JTAG functionality available on all package types of the 71V35761SA183BGG?
No, JTAG is only implemented in BGA packages (e.g., BGG119) for the 71V35761SA183BGG. The TMS, TDI, TCK, TDO, and optional TRST pins are assigned to specific balls in the 119-ball grid; they are NC (no-connect) in TQFP variants. Always verify pinout diagrams for your selected package.
How does the ZZ pin affect power consumption in the 71V35761SA183BGG?
When ZZ is driven HIGH, the 71V35761SA183BGG enters full sleep mode with supply current reduced to IZZ ≤ 35 mA (industrial grade). Internal clock gating preserves data integrity while eliminating dynamic switching power - recovery time (tZZR) is 100 ns, allowing rapid resumption of operation.
What is the purpose of the ADV pin in burst operations of the 71V35761SA183BGG?
The ADV (Burst Address Advance) pin controls progression of the internal burst counter: ADV = LOW increments the counter to fetch the next sequential address in the burst, while ADV = HIGH suspends advancement - holding the current address for repeated access or controlled multi-cycle writes without counter wraparound.
71V35761SA183BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA183BGG FAQ
1.How can I place an order for 71V35761SA183BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA183BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA183BGG reliable?
The price and inventory of 71V35761SA183BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA183BGG is usually 5 days.
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Once your 71V35761SA183BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA183BGG?
For technical support, including 71V35761SA183BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA183BGG requirements.
6.How does Aetrix verify that 71V35761SA183BGG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA183BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BGG meets industry standards.
7.What is the process for return or replacement of 71V35761SA183BGG?
All 71V35761SA183BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA183BGG part is unused and in its original packaging.
Return procedure for 71V35761SA183BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA183BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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