Renesas 71V35761SA183BGG8

Overview

71V35761SA183BGG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO, features JTAG boundary scan (IEEE 1149.1), and is qualified for industrial temperature range (–40°C to +85°C). It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V35761SA183BGG8 datasheet, 71V35761SA183BGG8 pinout, 71V35761SA183BGG8 application, or 71V35761SA183BGG8 equivalent, key selection considerations include its 119-ball BGA (BGG) package, synchronous burst read/write timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O systems requiring low-latency pipelined data delivery.

Technical Context

The 71V35761SA183BGG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four consecutive 36-bit words per address using ADV-triggered sequencing, with LBO selecting linear or interleaved address order. Pipelined outputs deliver first data on the second rising CLK edge after address assertion.

It supports multiple write modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4), all synchronized to CLK. The device includes asynchronous OE and ZZ controls, JTAG TAP controller (TMS/TDI/TCK/TRST/TDO), and dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O).

Key Specifications

Pinout & Package

Packaged in a 119-ball fine-pitch ball grid array (BGG), JEDEC-standard footprint (13 mm × 13 mm), with 0.8 mm ball pitch. Pinout conforms to BG119 layout (document 5301 drw 04), including dedicated VDDQ/VSS pairs for I/O noise suppression and NC pins reserved for future variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167BZXI and AS7C331024P-167BIN, the 71V35761SA183BGG8 uniquely delivers pipelined burst reads, JTAG testability, and industrial-temperature sleep mode - making it the only option for deterministic, high-throughput, field-testable memory in telecom and industrial edge systems.

Availability

71V35761SA183BGG8 is available at Aetrix Electronics and suitable for baseband processing units, high-speed network switch ASICs, and ruggedized industrial PLCs requiring stable component supply across extended product lifecycles.

Supply support for 71V35761SA183BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and RF solutions, now part of Renesas Electronics.

The 71V35761SA183BGG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in telecom infrastructure, networking equipment, and real-time embedded systems.

FAQ

What is the maximum clock frequency supported by the 71V35761SA183BGG8?

The 71V35761SA183BGG8 is rated for 183 MHz operation with a 3.3 ns clock access time under industrial temperature conditions (–40°C to +85°C). This speed is guaranteed across full voltage (3.3 V ±5%) and temperature range, and is distinct from the commercial-only 200 MHz variant. The 71V35761SA183BGG8 achieves this timing using internal pipelining and registered I/O paths, eliminating external wait-state logic in FPGA or ASIC memory controllers.

Does the 71V35761SA183BGG8 support both linear and interleaved burst modes?

Yes, the 71V35761SA183BGG8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation. The 71V35761SA183BGG8 implements the burst counter internally, advancing on each ADV pulse, and is fully compliant with industry-standard burst protocols used in DSP and RISC memory controllers.

What package type is used for the 71V35761SA183BGG8?

The 71V35761SA183BGG8 is packaged in a 119-ball fine-pitch ball grid array (BGG), JEDEC-standard footprint measuring 13 mm × 13 mm with 0.8 mm ball pitch. This BGA variant includes full JTAG signals (TMS/TDI/TCK/TRST/TDO) and supports industrial temperature operation. The 'BGG' suffix explicitly denotes this 119-ball configuration, distinguishing it from the 100-pin TQFP (PKG100) and 165-ball fBGA (BQG165) variants in the same family.

How does the ZZ pin function on the 71V35761SA183BGG8?

The ZZ pin on the 71V35761SA183BGG8 is an asynchronous active-HIGH sleep mode enable. When asserted HIGH, it gates the internal clock and reduces supply current to ≤35 mA (industrial grade) while guaranteeing full data retention. Recovery requires tZZR ≥100 ns after ZZ returns LOW before valid accesses resume. The 71V35761SA183BGG8 includes an internal pulldown on ZZ, so floating operation defaults to active mode - no external biasing is needed unless explicit sleep control is implemented.

Is JTAG boundary scan available on the 71V35761SA183BGG8?

Yes, the 71V35761SA183BGG8 includes a fully compliant IEEE 1149.1 JTAG boundary scan interface with dedicated TMS, TDI, TCK, TRST (optional), and TDO pins. This feature is present only in the 'SA' version (as indicated by the 'SA' in the part number), and is implemented in the BGG package per the BG119 pinout. The 71V35761SA183BGG8 supports standard EXTEST and SAMPLE/PRELOAD instructions, enabling board-level interconnect testing and in-system programmability verification.