Renesas 71V35761SA183BGGI

Overview

71V35761SA183BGGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-reliability embedded systems.

For engineers reviewing the 71V35761SA183BGGI datasheet, 71V35761SA183BGGI pinout, 71V35761SA183BGGI application, or 71V35761SA183BGGI equivalent, this device delivers deterministic low-latency memory access for cache-coherent subsystems, network packet buffers, and real-time DSP data paths requiring burst-aligned, pipelined read/write cycles with industrial temperature support.

Technical Context

The 71V35761SA183BGGI implements a synchronous dual-register architecture: address, data, and control signals are registered on the rising edge of CLK, enabling precise timing control. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state (linear or interleaved).

Burst operation is initiated by ADV=LOW and sustained across four clock edges; pipelined output delivers first data one cycle after address latch, with subsequent outputs aligned to successive CLK edges. Sleep mode is entered asynchronously via ZZ=HIGH, reducing supply current to ≤35mA while retaining data.

Key Specifications

Pinout & Package

71V35761SA183BGGI is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC-standard footprint measuring 12 mm × 12 mm with 0.8 mm ball pitch. Pinout conforms to BG119 layout with dedicated VDDQ/VSS pairs for I/O noise suppression and NC/JTAG pins assigned per SA variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-183BZXI and AS7C3256A-183BIN, the 71V35761SA183BGGI uniquely combines 36-bit width, industrial temperature, JTAG, and configurable burst sequencing - making it irreplaceable in high-assurance networking and real-time control applications demanding full traceability and deterministic latency.

Availability

71V35761SA183BGGI is available at Aetrix Electronics and suitable for network packet buffering, DSP co-processing, cache-coherent subsystems, and industrial PLC memory expansion requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761SA183BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF products for communications, computing, and industrial markets.

The 71V35761SA183BGGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency memory access in cache, packet buffer, and real-time signal processing subsystems where burst efficiency and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761SA183BGGI?

The 71V35761SA183BGGI is rated for 183 MHz operation with a guaranteed clock access time of 3.3 ns across the full industrial temperature range (–40°C to +85°C). This specification is validated under VDD = VDDQ = 3.3 V ±5%, and includes setup/hold timing margins for reliable system integration.

Does the 71V35761SA183BGGI support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V35761SA183BGGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. LBO is a static configuration pin and must remain stable during operation to prevent burst sequence corruption.

What package type and pin count does the 71V35761SA183BGGI use, and is JTAG available in this variant?

The 71V35761SA183BGGI uses a 119-ball fine-pitch BGA (BGG119) package. As indicated by the "SA" suffix, it includes full IEEE 1149.1-compliant JTAG boundary scan capability with dedicated TMS, TDI, TCK, TRST, and TDO pins assigned per the BG119 pinout - confirmed in datasheet Figure 5 and Table 2.

How does the ZZ pin function in the 71V35761SA183BGGI, and what power savings does it provide?

The ZZ pin on the 71V35761SA183BGGI enables full sleep mode when driven HIGH. In this state, internal clock gating reduces supply current to ≤35 mA (ISB1/IZZ), while guaranteeing full data retention. Recovery time (tZZR) is 100 ns, and ZZ has an internal pull-down to ensure active mode at power-up if left unconnected.

Can the 71V35761SA183BGGI perform byte-selectable writes, and how are the byte lanes mapped?

Yes, the 71V35761SA183BGGI supports true byte-selectable writes using BW1–BW4 inputs. BW1 controls I/O0–I/O7 and I/OP1 (9 bits), BW2 controls I/O8–I/O15 and I/OP2, BW3 controls I/O16–I/O23 and I/OP3, and BW4 controls I/O24–I/O31 and I/OP4 - enabling partial-word updates without read-modify-write overhead.