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Renesas 71V35761SA183BGGI8

Part No.:
71V35761SA183BGGI8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V35761SA183BGGI8.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,499

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Product details

Overview

71V35761SA183BGGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and embedded control systems.

For engineers reviewing the 71V35761SA183BGGI8 datasheet, 71V35761SA183BGGI8 pinout, 71V35761SA183BGGI8 application, or 71V35761SA183BGGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard BGA-119 package mapping, synchronous burst read/write behavior, sleep mode (ZZ) power management, and JTAG interface configuration - all confirmed for the SA variant with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V35761SA183BGGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst address counter generates four sequential 36-bit words per address, with output pipelining delivering first data on the second rising CLK edge after ADSP/ADSC assertion.

Burst order is selected statically via LBO (LOW = linear, HIGH = interleaved); write operations support global (GW) or byte-level (BW1–BW4 + BWE) control with self-timed completion. JTAG TAP controller (TMS/TDI/TCK/TRST/TDO) is integrated and functional in the SA version, compliant with IEEE 1149.1.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.608 Mbit), enabling 36-bit wide data paths for RISC processors and network packet buffers.
Clock Frequency / Access Time 183 MHz / 3.3 ns - guarantees deterministic read latency in real-time control loops and switch fabric interfaces.
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - eliminates level-shifting requirements in 3.3V system designs.
Burst Mode Control LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment in CPU coherency protocols.
Power Management ZZ input enables full sleep mode (IZZ ≤ 35 mA) with data retention - reduces standby power in always-on telecom modules.
JTAG Support IEEE 1149.1-compliant boundary scan (TMS/TDI/TCK/TRST/TDO) - enables in-system test and debug without physical probe access.
Operating Temperature –40°C to +85°C (industrial grade) - validated for deployment in base station RF units and industrial PLC backplanes.

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG), footprint code BGGI8 denotes industrial-grade, lead-free, RoHS-compliant assembly with 0.8 mm ball pitch and 13 mm × 13 mm body size.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs Synchronous 18-bit address bus; A0–A1 select internal 9-bit byte within 36-bit word for burst sequencing.
CLK System Clock Input Rising-edge-triggered master timing reference; all registers (address, data, control) sample on CLK rise.
ADSP / ADSC Address Status Inputs ADSP (processor) or ADSC (cache controller) asserts LOW to latch address and initiate burst cycle - enables dual-bus arbitration.
ADV Burst Address Advance LOW enables internal counter increment; HIGH suspends burst - allows dynamic burst termination during cache miss handling.
GW / BWE / BW1–BW4 Write Control Inputs GW writes all 4 bytes; BWE enables byte-write mode; BW1–BW4 select individual 9-bit bytes - supports partial-word updates without read-modify-write.
I/O0–I/O31, I/OP1–I/OP4 Data I/O (36-bit) Registered bidirectional bus: outputs pipelined (1-cycle delay), inputs captured on CLK rise - ensures setup/hold compliance at 183 MHz.
ZZ Sleep Mode Enable Asynchronous HIGH disables internal clock and reduces current to ≤35 mA while retaining memory contents - critical for low-power wake-on-event designs.
TMS/TDI/TCK/TRST/TDO JTAG Test Interface Full 5-pin IEEE 1149.1 TAP controller; TRST optional asynchronous reset - supports automated board test and firmware validation.

Key Features

Feature Design Value
Pipelined Burst Outputs First data appears on second CLK edge; subsequent words align to consecutive edges - eliminates wait states in high-throughput DMA transfers.
Single-Cycle Deselect Chip deactivation completes within one clock cycle after CE/CS deassertion - prevents bus contention during rapid context switching.
Self-Timed Write Cycle Internal timing logic finalizes write completion without external strobe - simplifies controller design and improves write reliability across voltage/temperature variation.
Linear/Interleaved Burst Order LBO pin configures burst address sequence to match CPU cache line layout (e.g., Pentium vs. PowerPC) - avoids software workarounds for memory mapping.
3.3V Core & I/O Compatibility Dual 3.3V supplies (VDD/VDDQ) with VIH/VIL thresholds referenced separately - ensures noise margin in mixed-signal FPGA/SOC interfacing.

Applications

Network Packet Buffering CPU Cache Coherency

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency 36-bit-wide buffer with pipelined burst reads supporting 10 Gbps line-rate processing.

Use Value: 183 MHz operation and single-cycle deselect enable real-time frame buffering without pipeline stalls or external FIFO logic.

Use Scenario: Acting as secondary cache tag RAM or directory memory in multi-core SoC interconnect fabrics.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.3 ns access for cache lookup and snoop response generation.

Use Value: Linear/interleaved burst mode matches cache line stride; JTAG enables post-silicon validation of coherency protocol state machines.

Industrial Motion Controller Memory Avionics Data Acquisition Buffer

Use Scenario: Holding real-time servo position tables and motion profile segments in CNC and robotics drives.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM with ZZ-controlled sleep mode for energy-efficient idle periods between motion cycles.

Use Value: –40°C to +85°C rating ensures reliability in motor-control enclosures; burst writes accelerate profile loading from host microcontroller.

Use Scenario: Capturing high-resolution sensor telemetry (e.g., inertial measurement unit streams) in flight data recorders.

IC Role / Device Role / Timing Role: Radiation-tolerant-capable BGA-packaged SRAM with JTAG for DO-254-compliant built-in test (BIT) verification.

Use Value: Boundary scan validates interconnect integrity pre-flight; pipelined outputs reduce ADC-to-memory transfer latency by 1 cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1371DV33-183BZXI 128K × 36, 183 MHz, 3.3V, no JTAG; uses different burst control (MODE pin vs. LBO); BGA-119 but non-identical pinout. Lacks IEEE 1149.1 test interface; requires external boundary scan for production test coverage. Select when JTAG is unnecessary and legacy Cypress toolchain compatibility is required.
AS7C33128P33A-183BIN 128K × 36, 183 MHz, 3.3V, no sleep mode (ZZ) or burst suspend (ADV); TQFP-only packaging. No ZZ power-down or ADV-controlled burst suspension - limits use in ultra-low-power or adaptive bandwidth systems. Select for cost-sensitive, non-industrial applications where TQFP assembly is preferred and power management is secondary.

Compared with CY7C1371DV33-183BZXI and AS7C33128P33A-183BIN, the 71V35761SA183BGGI8 uniquely integrates JTAG testability and programmable burst suspension (ADV) - enabling both production test automation and dynamic bandwidth adaptation in mission-critical embedded systems.

Availability

71V35761SA183BGGI8 is available at Aetrix Electronics and suitable for network packet buffering, CPU cache coherency, industrial motion control, avionics data acquisition, and telecom baseband processing requiring stable component supply across extended temperature ranges.

Supply support for 71V35761SA183BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V35761SA183BGGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and robust testability in infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V35761SA183BGGI8?

The 71V35761SA183BGGI8 is rated for 183 MHz operation with a guaranteed clock access time of 3.3 ns under industrial temperature conditions (–40°C to +85°C). This specification is validated across VDD and VDDQ at 3.3 V ±5%, and applies to both read and write cycles with proper setup/hold timing margins.

Does the 71V35761SA183BGGI8 support JTAG boundary scan, and which pins are used?

Yes, the 71V35761SA183BGGI8 (SA variant) includes full IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned on the BGG119 package (U1–U6 positions), with internal pull-ups on TMS/TDI/TCK/TRST and internal pull-down on ZZ.

How does burst mode operate in the 71V35761SA183BGGI8, and what controls the sequence order?

Burst mode in the 71V35761SA183BGGI8 delivers four 36-bit words per address using an internal binary counter. The LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) sequence order - matching CPU cache line layouts without software intervention.

What is the function of the ADV pin in the 71V35761SA183BGGI8, and how does it affect burst operation?

The ADV pin in the 71V35761SA183BGGI8 controls burst address advancement: ADV = LOW increments the internal counter for normal burst progression; ADV = HIGH suspends counter advance, holding the current address for repeated access - useful for cache line fills or diagnostic reads.

What power-saving modes does the 71V35761SA183BGGI8 support, and what is the typical current draw in each?

The 71V35761SA183BGGI8 supports CMOS standby (ISB1 ≤ 35 mA), clock-running standby (ISB2 ≤ 130 mA), and full sleep mode (IZZ ≤ 35 mA) activated by the ZZ pin. All modes retain data; sleep mode gates the internal clock and minimizes dynamic power consumption.

71V35761SA183BGGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
183 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.3 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V35761SA183BGGI8 FAQ

1.How can I place an order for 71V35761SA183BGGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V35761SA183BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V35761SA183BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA183BGGI8 is usually 5 days.

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5.How can I obtain technical support or documentation for 71V35761SA183BGGI8?

For technical support, including 71V35761SA183BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA183BGGI8 requirements.

6.How does Aetrix verify that 71V35761SA183BGGI8 is sourced from the original manufacturer or authorized distributors?

All 71V35761SA183BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BGGI8 meets industry standards.

7.What is the process for return or replacement of 71V35761SA183BGGI8?

All 71V35761SA183BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BGGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V35761SA183BGGI8 part is unused and in its original packaging.

Return procedure for 71V35761SA183BGGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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