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Renesas 71V35761SA183BGI
- Part No.:
- 71V35761SA183BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA183BGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,701
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Product details
Overview
71V35761SA183BGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom control plane buffers.
For engineers reviewing the 71V35761SA183BGI datasheet, 71V35761SA183BGI pinout, 71V35761SA183BGI application, or 71V35761SA183BGI equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep-mode current (30–35mA), TQFP-100 package compatibility, and industrial temperature support (–40°C to +85°C).
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, enabling four-word pipelined reads per address. The device supports both global write (GW) and byte-level writes (BW1–BW4 with BWE gating), with asynchronous OE and ZZ controls.
It integrates self-timed write logic triggered by CLK edge plus ADSP/ADSC status signals, and includes dedicated registers for address latching, output enable delay, and burst sequencing. The SA variant adds optional JTAG (TMS/TDI/TCK/TRST/TDO) compliant with IEEE 1149.1, implemented only in BGA packages - confirmed for this part via "SA" suffix and TRST presence in pin tables.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data path for wide-bus systems. |
| Clock Frequency | 183 MHz maximum; enables 3.3 ns clock-to-data access for real-time packet buffering. |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate rails reduce noise coupling. |
| Burst Mode | Linear or interleaved via LBO pin; internal counter delivers four consecutive words without external address increment. |
| Sleep Current | IZZ = 30 mA (commercial), 35 mA (industrial); low-power retention mode activated by ZZ HIGH. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded control and base station applications. |
| JTAG Support | IEEE 1149.1 compliant; TMS/TDI/TCK/TRST/TDO pins present and functional in SA variant. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion. |
| CLK | Clock Input | Primary timing reference; all synchronous operations aligned to rising edge. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx signals for selective 9-bit byte writes. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously. |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear, HIGH = interleaved burst sequence. |
| ZZ | Sleep Mode Enable | Asynchronous HIGH disables internal clock and reduces supply current to IZZ level. |
| TMS, TDI, TCK, TRST, TDO | JTAG Test Interface | IEEE 1149.1 boundary scan chain; TRST is optional active-low reset (internal pull-up). |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered inputs/outputs synchronized to CLK rising edge. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First data word appears one clock cycle after address latch; enables deterministic latency in high-throughput memory interfaces. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle - critical for multi-SRAM arbitration in shared-bus systems. |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse width control; improves system timing margin. |
| Configurable Burst Order | LBO pin selects linear (00→01→10→11) or interleaved (00→01→11→10) addressing - matches CPU/cache line layouts. |
| Low-Power Sleep Mode | ZZ-controlled power-down reduces IDD to ≤35 mA while retaining full data; ideal for burst-idle duty cycles. |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency 36-bit buffer interfacing directly to MAC and switch fabric controllers. Use Value: 183MHz burst read/write throughput sustains 6.5 Gbps aggregate bandwidth; pipelined outputs eliminate wait states. | Use Scenario: Caching protocol headers and signaling metadata in 4G/5G baseband processing units. IC Role / Device Role / Timing Role: Synchronous SRAM serving as dual-port-accessible cache between DSP cores and FPGA-based framer logic. Use Value: Single-cycle deselect and burst counter reduce controller overhead; industrial temp rating ensures field reliability. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
Use Scenario: Capturing sensor timestamps and I/O state snapshots in programmable logic controllers during fault events. IC Role / Device Role / Timing Role: Non-volatile-retentive buffer holding up to 128K 36-bit records; accessed via deterministic burst reads. Use Value: ZZ sleep mode cuts power during idle intervals; –40°C to +85°C operation supports uncontrolled cabinet environments. | Use Scenario: Holding pre-processed ADC samples in airborne radar front-end modules prior to FFT computation. IC Role / Device Role / Timing Role: High-speed FIFO element synchronized to sampling clock; uses ADV to pause burst during processing stalls. Use Value: ADV-suspend capability allows real-time flow control without losing burst alignment; 3.3ns access meets sub-ns jitter budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 128K × 36, 167MHz max, no JTAG, 100-pin TQFP, commercial-only (0°C to +70°C) | Lacks industrial temp rating and IEEE 1149.1 test interface; lower speed grade. | Select when JTAG and extended temperature are not required; cost-sensitive designs. |
| AS7C33128P33A-183BIN | 128K × 36, 183MHz, no burst counter or ADV/LBO, 100-pin TQFP, industrial temp | Fixed linear burst only; no interleaved mode or burst suspend (ADV); no JTAG. | Choose for simplified burst control where ADV/LBO flexibility is unnecessary. |
Compared with CY7C1362BV33-167AXC and AS7C33128P33A-183BIN, the 71V35761SA183BGI uniquely combines industrial temperature support, IEEE 1149.1 JTAG, and configurable burst sequencing - making it optimal for testable, field-deployed telecom and defense systems requiring guaranteed timing and diagnostics.
Availability
71V35761SA183BGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761SA183BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V35761 family was designed for high-speed, low-latency synchronous memory applications in telecom infrastructure, enterprise networking, and real-time control systems demanding burst-mode efficiency and robust testability.
FAQ
What is the maximum operating frequency of the 71V35761SA183BGI?
The 71V35761SA183BGI is rated for 183 MHz operation with a 3.3 ns clock access time under industrial temperature conditions (–40°C to +85°C). This speed is guaranteed across its full voltage range (VDD/VDDQ = 3.3 V ±5%) and validated per AC Electrical Characteristics Table 16 in the official datasheet.
Does the 71V35761SA183BGI support JTAG boundary scan?
Yes, the 71V35761SA183BGI supports IEEE 1149.1-compliant JTAG boundary scan. As indicated by the "SA" suffix and confirmed in Pin Definitions Table 2 and BGA pin configurations, it includes functional TMS, TDI, TCK, TRST, and TDO pins - with TRST being optional and internally pulled up.
How does burst mode work on the 71V35761SA183BGI?
The 71V35761SA183BGI uses an internal burst counter that loads the initial address on ADSP/ADSC assertion and advances on each ADV=LOW pulse. LBO selects linear or interleaved sequence order. Four consecutive 36-bit words are delivered pipelined on successive CLK edges - no external address changes required.
What is the function of the ZZ pin on the 71V35761SA183BGI?
The ZZ pin on the 71V35761SA183BGI is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and reduces supply current to IZZ (≤35 mA industrial), while guaranteeing full data retention. Recovery requires tZZR ≥100 ns after ZZ returns LOW.
Which package type is used for the 71V35761SA183BGI?
The 71V35761SA183BGI uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size. This is explicitly stated in the Features section and confirmed in Pin Configuration Drawing 2 (PKG100), distinguishing it from BGA variants of the same family.
71V35761SA183BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA183BGI FAQ
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6.How does Aetrix verify that 71V35761SA183BGI is sourced from the original manufacturer or authorized distributors?
All 71V35761SA183BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BGI meets industry standards.
7.What is the process for return or replacement of 71V35761SA183BGI?
All 71V35761SA183BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA183BGI part is unused and in its original packaging.
Return procedure for 71V35761SA183BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA183BGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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Microchip Technology
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Microchip Technology
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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