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Renesas 71V35761SA183BGI8
- Part No.:
- 71V35761SA183BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA183BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,421
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Product details
Overview
71V35761SA183BGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) for testability in high-speed networking and telecom systems.
For engineers reviewing the 71V35761SA183BGI8 datasheet, 71V35761SA183BGI8 pinout, 71V35761SA183BGI8 application, or 71V35761SA183BGI8 equivalent, key selection criteria include burst-mode timing compliance, ZZ-controlled sleep mode current (30–35mA), TQFP-100 package compatibility, and JTAG-enabled debug support in industrial temperature range (–40°C to +85°C).
Technical Context
The 71V35761SA183BGI8 implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter advances on ADV=LOW and selects sequence order via LBO-linear (LBO=LOW) or interleaved (LBO=HIGH)-enabling four-word bursts per address.
It supports multiple write modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4), all synchronized to CLK. Power management includes asynchronous ZZ-triggered sleep mode with guaranteed data retention and low ISB1 standby current (30–35mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data path for high-bandwidth bus interfaces. |
| Max Clock Frequency | 183 MHz; enables 3.3 ns clock access time for real-time packet buffering in telecom line cards. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage stability during core switching. |
| Burst Mode Control | LBO pin selects linear or interleaved burst sequence; critical for cache coherency alignment in RISC processors. |
| Sleep Mode Current | IZZ = 30–35 mA (industrial temp); enables low-power idle states without data loss in always-on infrastructure equipment. |
| JTAG Support | IEEE 1149.1-compliant TMS/TDI/TCK/TRST/TDO; enables board-level structural test and in-system programming verification. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station RF units and industrial PLCs. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT 71V35761 SA-series documentation (PKG100 top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion for burst initiation. |
| CLK | Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) edge-triggered on rising CLK. |
| ADV | Burst Address Advance | Active-LOW signal controlling internal burst counter increment; HOLD = HIGH suspends burst sequence. |
| LBO | Linear/Interleaved Burst Order | Static configuration pin; LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10) addressing. |
| ZZ | Sleep Mode Enable | Asynchronous HIGH-active input; gates internal CLK and reduces supply current to IZZ level while retaining memory contents. |
| TMS/TDI/TCK/TRST/TDO | JTAG Test Interface | Boundary-scan chain for IEEE 1149.1 compliance; TRST optional, internal pull-up; supports production test and field diagnostics. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | First output data appears one clock cycle after address latch; enables deterministic timing for synchronous bus arbitration in switch fabric controllers. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle; eliminates bus contention windows during rapid context switching in multi-port memory systems. |
| Self-Timed Write Cycle | Internal write timing determined by GW/BWE/BWx state at CLK edge-no external write pulse width constraints required for reliable data capture. |
| Byte-Write Granularity | BW1–BW4 enable independent 9-bit writes (I/O0–7+I/OP1, etc.); supports partial updates in protocol header fields without full-word overwrite overhead. |
| Industrial Temp + JTAG | Full IEEE 1149.1 test interface retained across –40°C to +85°C range; ensures test coverage integrity in harsh-environment deployments. |
Applications
| Telecom Line Card Buffering | High-Speed Network Switch Fabric |
|---|---|
Use Scenario: Storing packet headers and metadata in OC-192/STM-64 line interface modules requiring deterministic latency and burst throughput. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with pipelined read outputs and 183MHz clock alignment to SerDes PHY timing. Use Value: 3.3ns access time and single-cycle deselect minimize inter-packet gap, enabling wire-speed forwarding at 10 Gbps. | Use Scenario: Implementing distributed lookup tables and queue management in modular chassis-based Ethernet switches with multi-GHz backplane clocks. IC Role / Device Role / Timing Role: Burst-mode SRAM serving as TCAM shadow memory and descriptor cache, synchronized to switch ASIC clock domain. Use Value: Linear/interleaved burst modes match ASIC burst request patterns, reducing average memory latency by up to 40% vs. random access. |
| Industrial PLC Real-Time I/O | Radar Signal Processing Memory |
Use Scenario: Holding cyclic process data images and motion control command buffers in DIN-rail mounted programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic read/write response for hard real-time I/O scanning cycles. Use Value: ZZ sleep mode cuts power by >70% during idle scan intervals while preserving volatile process state-critical for fanless enclosure thermal design. | Use Scenario: Buffering ADC samples and FFT intermediate results in airborne radar front-end modules subject to wide ambient temperature swings. IC Role / Device Role / Timing Role: High-reliability SRAM with JTAG test access supporting DO-254 compliance verification and in-field fault isolation. Use Value: IEEE 1149.1 boundary scan enables structural test of memory interconnects without physical probe access-reducing maintenance downtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-167AXC | 128K × 36, 167MHz max, no JTAG, 100-pin TQFP, commercial temp only (0°C to +70°C) | Lacks industrial temp rating and boundary-scan; suitable only for non-critical, cost-sensitive embedded systems. | Select when JTAG and extended temperature are not required; verify timing margins at 167MHz vs. 183MHz target. |
| AS7C33128PFS-183BIN | 128K × 36, 183MHz, no LBO/burst control, no JTAG, 100-pin TQFP, industrial temp (–40°C to +85°C) | Fixed burst behavior (no linear/interleaved selection); lacks sleep mode and boundary-scan capability. | Choose if burst flexibility and testability are secondary to lowest unit cost; confirm system-level burst pattern compatibility. |
Compared with CY7C1355BV18-167AXC and AS7C33128PFS-183BIN, the 71V35761SA183BGI8 uniquely combines industrial temperature operation, IEEE 1149.1 JTAG, configurable burst order (LBO), and ZZ sleep mode-making it the only option meeting full DO-254, NEBS Level 3, and IEC 61508 functional safety prerequisites for infrastructure-class designs.
Availability
71V35761SA183BGI8 is available at Aetrix Electronics and suitable for telecom line card buffering, high-speed network switch fabric, and industrial PLC real-time I/O requiring stable component supply across extended lifecycle programs.
Supply support for 71V35761SA183BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V35761SA183BGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and robust testability in mission-critical infrastructure equipment.
FAQ
What is the maximum operating frequency of the 71V35761SA183BGI8?
The 71V35761SA183BGI8 is rated for 183 MHz operation with 3.3 ns clock access time under industrial temperature conditions (–40°C to +85°C). This speed is guaranteed across full VDD (3.3 V ±5%) and VDDQ (3.3 V ±5%) ranges, and is validated per AC Electrical Characteristics Table 16 in the official IDT datasheet revision May 18, 2020.
Does the 71V35761SA183BGI8 support both linear and interleaved burst modes?
Yes, the 71V35761SA183BGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). This behavior is defined in Tables 14 and 15 of the datasheet and applies to all 183 MHz and 166 MHz speed grades.
Is JTAG boundary scan available on the 71V35761SA183BGI8?
Yes, the 71V35761SA183BGI8 includes full IEEE 1149.1-compliant JTAG boundary scan with TMS, TDI, TCK, TRST (optional), and TDO pins. This feature is explicitly enabled in the "SA" variant (denoted in the part number suffix) and is documented in the Functional Block Diagram and Pin Definitions sections of the datasheet.
What is the power consumption of the 71V35761SA183BGI8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V35761SA183BGI8 draws IZZ = 30 mA (commercial) or 35 mA (industrial) at VDD = 3.465 V, as specified in Table 9 of the datasheet. Data retention is guaranteed across the full industrial temperature range, and recovery time (tZZR) is 100 ns minimum.
Which package type does the 71V35761SA183BGI8 use?
The 71V35761SA183BGI8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm lead pitch. This is confirmed in the "Pin Configuration (3)" section (page 5) and "Packaging" feature list of the datasheet, and matches the "BGI8" suffix designation.
71V35761SA183BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA183BGI8 FAQ
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6.How does Aetrix verify that 71V35761SA183BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA183BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BGI8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA183BGI8?
All 71V35761SA183BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA183BGI8 part is unused and in its original packaging.
Return procedure for 71V35761SA183BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA183BGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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