Renesas 71V35761SA183BQG
- Part No.:
- 71V35761SA183BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V35761SA183BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V35761SA183BQG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) in the SA variant. Used in high-speed networking and embedded control buffers requiring deterministic latency.
For engineers reviewing the 71V35761SA183BQG datasheet, 71V35761SA183BQG pinout, 71V35761SA183BQG application, or 71V35761SA183BQG equivalent, key selection criteria include burst mode timing compliance, ZZ sleep-mode current (30mA), TQFP-100 package compatibility, and JTAG-enabled testability for production validation.
Technical Context
The 71V35761SA183BQG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state-linear (LBO = LOW) or interleaved (LBO = HIGH).
Burst operation is initiated by ADSP/ADSC low and advanced by ADV low; pipelined output delivers first data on the next rising CLK edge, followed by three more outputs on subsequent edges. Sleep mode is entered asynchronously via ZZ high, gating CLK and reducing supply current to 30mA while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports byte-wide writes across four 9-bit groups (BW1–BW4) |
| Clock Frequency | 183 MHz max (industrial temp); enables 3.3 ns clock-to-data access for real-time buffering |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails allow I/O voltage stability during core switching |
| Burst Mode Control | LBO pin selects linear or interleaved address sequence; static configuration required before operation |
| Sleep Current | IZZ = 30 mA (industrial); full retention achieved with ZZ high, critical for low-power standby in telecom line cards |
| JTAG Support | IEEE 1149.1 compliant TAP controller (TMS/TDI/TCK/TRST/TDO); optional TRST, internal pull-ups on all JTAG pins |
| Operating Temperature | –40°C to +85°C; validated for industrial environments including base station control planes and motor drives |
Pinout & Package
71V35761SA183BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked by corner notch; pin 14 (VDD/NC) may be tied to VDD or left unconnected; pin 64 (ZZ) must be actively driven for sleep control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC low; define 128K-word address space |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) triggered on rising edge |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache) are active-low synchronous load triggers for address register |
| ADV | Burst Address Advance | Active-low signal that increments internal burst counter; held high to suspend burst sequence |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear, HIGH = interleaved; must remain stable during operation |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit I/O groups (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous control: LOW enables outputs, HIGH forces high-Z; independent of CLK |
| ZZ | Sleep Mode Input | Asynchronous high-level entry to power-down; internally pulled down; requires ≥100 ns pulse width |
| TMS–TDO | JTAG Boundary Scan | IEEE 1149.1 TAP interface; TRST optional; all pins have internal pull-ups except ZZ (pull-down) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input/output paths; each group tied to one BWx signal |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data appears on second CLK edge; subsequent words align to rising edges-reducing read latency in pipeline-constrained systems |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle, enabling rapid context switching between memory banks |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; supports GW, BWE, and per-byte BWx control simultaneously |
| Configurable Burst Order | LBO pin allows runtime selection between linear (sequential) and interleaved (cache-friendly) addressing without firmware change |
| JTAG Boundary Scan | Full IEEE 1149.1 support enables board-level interconnect testing and in-system programming verification |
Applications
| High-Speed Network Buffering | Industrial Motion Controller Memory |
|---|---|
Use Scenario: Line-rate packet buffering in 10G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.3 ns read access and burst-aligned data delivery to MAC layer. Use Value: Pipelined outputs and single-cycle deselect enable back-to-back frame handling without pipeline stalls. | Use Scenario: Real-time position lookup table storage in servo drive FPGA-based motion controllers. IC Role / Device Role / Timing Role: Low-latency, jitter-free memory for trajectory interpolation engines requiring sub-microsecond access. Use Value: 183 MHz operation and industrial temperature rating ensure reliable performance under thermal cycling in factory automation. |
| Telecom Baseband Processing | Avionics Data Acquisition Buffer |
Use Scenario: Channelized data buffering between DSPs and RF front-end FPGAs in LTE/LTE-A base stations. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with multi-lane parallel buses to absorb variable-rate ADC/DAC streams. Use Value: Linear/interleaved burst selection optimizes cache line alignment for FFT and filtering kernels. | Use Scenario: High-integrity sensor data staging in flight control computers prior to ARINC 429 transmission. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (via packaging and screening) with guaranteed data retention in sleep mode. Use Value: ZZ-controlled sleep mode reduces system power by >70% during idle periods without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 128K × 36, 167 MHz max, no JTAG, 100-pin TQFP, VDD/VDDQ = 3.3 V | Lacks IEEE 1149.1 test interface; lower speed grade; identical burst and sleep functionality | Select when JTAG is unnecessary and 167 MHz timing suffices; cost-optimized for non-test-critical deployments |
| AS7C31026B-15JIN | 128K × 36, 15 ns async access, no burst counter, no pipelining, 100-pin TQFP | Asynchronous architecture; no ADV/LBO/ADSP/ADSC logic; no JTAG; higher access latency | Choose only for legacy designs requiring pin-compatible drop-in replacement where burst performance is not required |
Compared with CY7C1362BV33-167AXC and AS7C31026B-15JIN, the 71V35761SA183BQG uniquely delivers JTAG testability, 183 MHz burst throughput, and deterministic pipelined latency-making it optimal for new high-reliability, high-speed embedded systems where debug visibility and timing predictability are mandatory.
Availability
71V35761SA183BQG is available at Aetrix Electronics and suitable for high-speed network buffering, industrial motion control, telecom baseband processing, and avionics data acquisition requiring stable component supply across extended product lifecycles.
Supply support for 71V35761SA183BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics.
The 71V35761SA183BQG belongs to IDT's high-performance synchronous SRAM product line, designed specifically for deterministic, low-jitter memory interfacing in networking, telecom, and industrial real-time systems.
FAQ
What is the maximum operating frequency of the 71V35761SA183BQG?
The 71V35761SA183BQG is rated for 183 MHz operation (3.3 ns clock access time) across the industrial temperature range (–40°C to +85°C). This speed is guaranteed under VDD/VDDQ = 3.3 V ±5%, with timing validated per AC Electrical Characteristics Table 16 in the official datasheet. The "183" in the part number explicitly denotes this speed grade.
Does the 71V35761SA183BQG support both linear and interleaved burst modes?
Yes, the 71V35761SA183BQG supports both burst modes via the LBO (Linear/Interleaved Burst Order) input pin. When LBO is driven LOW, the device uses linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and static-its state must be stable before and during burst operation.
What JTAG signals are implemented on the 71V35761SA183BQG?
The 71V35761SA183BQG implements a full IEEE 1149.1-compliant JTAG boundary scan interface: TMS, TDI, TCK, TDO, and optional TRST. All JTAG pins have internal pull-ups except ZZ (internally pulled down). TRST is optional and may be left floating if unused; the TAP controller resets automatically at power-up.
How does sleep mode function on the 71V35761SA183BQG?
Sleep mode is activated asynchronously by driving the ZZ pin HIGH. This gates the internal clock and reduces supply current to 30 mA (IZZ) while guaranteeing data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume. ZZ has an internal pull-down, so it must be actively driven for reliable control.
What package type is used for the 71V35761SA183BQG?
The 71V35761SA183BQG is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm lead pitch. Pin 1 is identified by a corner notch; pin 14 is VDD/NC and may be tied to VDD or left unconnected; pin 64 is the ZZ input and must be actively controlled.
71V35761SA183BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V35761SA183BQG FAQ
1.How can I place an order for 71V35761SA183BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA183BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V35761SA183BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA183BQG is usually 5 days.
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6.How does Aetrix verify that 71V35761SA183BQG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA183BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA183BQG meets industry standards.
7.What is the process for return or replacement of 71V35761SA183BQG?
All 71V35761SA183BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA183BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA183BQG part is unused and in its original packaging.
Return procedure for 71V35761SA183BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA183BQG Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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